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IXTV26N50P

型号：

IXTV26N50P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

335 K

下载PDF手册
IXTQ 26N50P  
IXTT 26N50P  
IXTV 26N50P  
IXTV 26N50PS  
VDSS  
ID25  
RDS(on)  
=
=
≤
500  
26  
230 mΩ  
V
A
PolarHVTM  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-3P (IXTQ)  
Symbol  
Test Conditions  
Maximum Ratings  
G
D
S
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
V
D (TAB)  
TJ = 25° C to 150° C; RGS = 1 MΩ  
TO-268 (IXTT)  
VGSS  
VGSM  
Continuos  
Transient  
30  
40  
V
V
ID25  
IDM  
TC =25° C  
26  
78  
A
A
G
S
TC = 25° C, pulse width limited by TJM  
D (TAB)  
IAR  
TC =25° C  
26  
A
PLUS220 (IXTV)  
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
10  
V/ns  
G
D
S
D (TAB)  
TC =25° C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
PLUS220SMD (IXTV_S)  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
D (TAB)  
Weight  
TO-3P  
TO-268  
PLUS220 & PLUS220SMD  
6
5.5  
5
g
g
g
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Features  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
l
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
500  
V
V
3.0  
5.5  
l
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
Advantages  
TJ = 125° C  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
230 mΩ  
Easy to mount  
Space savings  
High power density  
l
l
DS99206E(12/05)  
© 2006 IXYS All rights reserved  
IXTQ 26N50P IXTT 26N50P  
IXTV 26N50P IXTV26N50PS  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
24  
31  
S
Ciss  
Coss  
Crss  
3600  
380  
48  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
20  
25  
58  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
65  
18  
20  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.31 ° C/W  
° C/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
26  
104  
1.5  
A
ISM  
A
V
PLUS220 (IXTV) Outline  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs  
300  
3.3  
ns  
QRM  
VR = 100V, VGS = 0 V  
µC  
PLUS220SMD (IXTV_S) Outline  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXTQ 26N50P IXTT 26N50P  
IXTV 26N50P IXTV26N50PS  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
V
= 10V  
8V  
GS  
8V  
7V  
7V  
6V  
6V  
6
4
2
5V  
5V  
15  
0
0
0
1
2
3
4
5
6
7
0
3
6
9
12  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 13A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 26A  
D
I
= 13A  
D
6
5V  
4
0.7  
0.4  
2
0
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 13A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
30  
25  
20  
15  
10  
5
3.2  
3
V
= 10V  
GS  
T
J
= 125ºC  
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
0.8  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXTQ 26N50P IXTT 26N50P  
IXTV 26N50P IXTV26N50PS  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 250V  
DS  
70  
60  
50  
40  
30  
20  
10  
0
I
I
= 13A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
0.9  
0.4  
0.5  
0.6  
0.7  
0.8  
1
1.1  
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10,000  
1,000  
100  
f = 1 MHz  
R
Limit  
DS(on)  
C
C
iss  
25µs  
100µs  
10  
1ms  
oss  
10ms  
DC  
T
= 150ºC  
= 25ºC  
J
C
T
C
rss  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 26N50P IXTT 26N50P  
IXTV 26N50P IXTV26N50PS  
Fig. 13. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
TO-268 (IXTT) Outline  
© 2006 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

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