IXTH 50P085
IXTT 50P085
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 (IXTH) Outline
VDS = -10 V; ID = ID25, pulse test
8
16
S
Ciss
Coss
Crss
4200
1720
750
pF
pF
pF
1
2
3
VGS = 0 V, VDS = -25 V, f = 1 MHz
td(on)
tr
td(off)
tf
46
39
86
38
ns
ns
ns
ns
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
RG = 4.7 Ω (External)
Tab - Drain
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
150
36
nC
nC
nC
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
A
Qgd
70
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCS
0.42
K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247)
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
S
5.49
.170 .216
242 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
6.15 BSC
TO-268 (IXTT) Outline
Symbol
TestConditions
IS
VGS = 0
-25
-200
-3
A
ISM
VSD
Repetitive; pulse width limited by TJM
A
V
IF = IS, V = 0 V,
Pulse teGsSt, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = IS, di/dt = 100 A/µs, VR = -50 V
180
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
