找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZT489TA

型号:

FZT489TA

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

216 K

A Product Line of  
Diodes Incorporated  
Green  
FZT489  
30V NPN SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223  
Features  
Mechanical Data  
Case: SOT223  
Case material: molded plastic. “Green” molding compound.  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Leads, Solderable per  
MIL-STD-202, Method 208  
BVCEO > 30V  
Max Continuous Current IC = 1A  
Low Saturation Voltage  
Complementary PNP Type: FZT589  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
PPAP capable (Note 4)  
Weight: 0.112 grams (approximate)  
C
SOT223  
B
E
Top View  
Pin-Out  
Top View  
Device Symbol  
Ordering Information (Notes 4 & 5)  
Product  
FZT489TA  
FZT489QTA  
Compliance  
AEC-Q101  
Automotive  
Marking  
FZT489  
FZT489  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
1,000  
7
7
12  
12  
1,000  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally  
the same, except where specified.  
5. For packaging details, go to our website at http://www.diodes.com  
Marking Information  
FZT489 = Product Type Marking Code  
FZT  
489  
1 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
A Product Line of  
Diodes Incorporated  
FZT489  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
50  
30  
7
Unit  
V
V
V
Continuous Collector Current  
Base Current  
1
A
200  
4
mA  
A
IB  
Peak Pulse Current  
ICM  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
2
3
62.5  
41.7  
19.41  
-55 to +150  
Unit  
W
W
°C/W  
°C/W  
°C/W  
°C  
(Note 6)  
(Note 7)  
(Note 6)  
(Note 7)  
Power Dissipation  
PD  
Thermal Resistance, Junction to Ambient  
RθJA  
Thermal Resistance, Junction to Leads (Note 8)  
Operating and Storage Temperature Range  
RθJL  
TJ, TSTG  
ESD Ratings (Note 9)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
8,000  
400  
Unit  
V
V
JEDEC Class  
3B  
C
Notes:  
6. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when  
operating in steady state condition.  
7. Same as note (6), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.  
8. Thermal resistance from junction to solder-point (at the end of the collector lead).  
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
2 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
A Product Line of  
Diodes Incorporated  
FZT489  
Thermal Characteristics and Derating Characteristics  
70  
60  
50  
40  
30  
20  
10  
0
50  
Tamb=25°C  
Tamb=25°C  
25mm x 25mm  
2oz FR4  
40  
30  
20  
10  
0
50mm x 50mm  
2oz FR4  
D=0.5  
D=0.5  
Single Pulse  
D=0.05  
Single Pulse  
D=0.2  
D=0.2  
D=0.05  
D=0.1  
D=0.1  
10  
100µ 1m 10m 100m  
1
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Transient Thermal Impedance  
3.0  
Single Pulse  
Tamb=25°C  
50mm x 50mm  
2oz FR4  
100  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
25mm x 25mm  
2oz FR4  
50mm x 50mm  
2oz FR4  
10  
25mm x 25mm  
2oz FR4  
1
100µ 1m 10m 100m  
1
10  
100  
1k  
0
20 40 60 80 100 120 140 160  
Pulse Width (s)  
Temperature (°C)  
Pulse Power Dissipation  
Derating Curve  
3 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
A Product Line of  
Diodes Incorporated  
FZT489  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
50  
30  
7
Typ  
Max  
Unit  
V
Test Condition  
IC = 100µA  
IC = 10mA  
IE = 100µA  
VCB = 30V  
VCE = 30V  
VEB = 4V  
V
V
100  
100  
100  
nA  
nA  
nA  
Collector Cut-off Current  
ICES  
Emitter Cut-off Current  
IEBO  
IC = 1A, IB = 100mA  
IC = 2A, IB = 200mA  
IC = 1A, IB = 100mA  
IC = 1A, VCE = 2V  
0.3  
0.6  
Collector-Emitter Saturation Voltage (Note 10)  
V
VCE(sat)  
Base-Emitter Saturation Voltage (Note 10)  
Base-Emitter Turn-On Voltage (Note 10)  
1.1  
1.0  
V
V
VBE(sat)  
VBE(on)  
IC = 1mA, VCE = 2V  
300  
100  
100  
60  
I
C = 1A, VCE = 2V  
IC = 2A, VCE = 2V  
C = 4A, VCE = 2V  
CE = 10V, IC = 50mA  
DC Current Gain (Note 10)  
hFE  
20  
I
V
Current Gain-Bandwidth Product (Note 10)  
Output Capacitance (Note 10)  
150  
MHz  
pF  
fT  
f = 100MHz  
10  
Cobo  
VCB = 10V, f = 1MHz  
Notes:  
10. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%  
4 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
A Product Line of  
Diodes Incorporated  
FZT489  
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
5 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
A Product Line of  
Diodes Incorporated  
FZT489  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.  
SOT223  
Dim Min Max Typ  
1.55 1.65 1.60  
A1 0.010 0.15 0.05  
A
b1  
b2  
C
D
E
E1  
e
e1  
L
2.90 3.10 3.00  
0.60 0.80 0.70  
0.20 0.30 0.25  
6.45 6.55 6.50  
3.45 3.55 3.50  
6.90 7.10 7.00  
4.60  
2.30  
0.85 1.05 0.95  
0.84 0.94 0.89  
A
Q
All Dimensions in mm  
A1  
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
X1  
Y1  
Dimensions Value (in mm)  
X1  
X2  
Y1  
Y2  
C1  
C2  
3.3  
1.2  
1.6  
1.6  
6.4  
2.3  
C1  
Y2  
C2  
X2  
6 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
A Product Line of  
Diodes Incorporated  
FZT489  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2012, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
October 2012  
© Diodes Incorporated  
FZT489  
Document Number DS33134 Rev. 4 - 2  
厂商 型号 描述 页数 下载

ZETEX

FZT1047A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 4 页

KEXIN

FZT1047A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

DIODES

FZT1047A SOT223 NPN硅平面[ SOT223 NPN SILICON PLANAR ] 4 页

TYSEMI

FZT1047A 5安培连续电流20安培的脉冲电流。[ 5 Amp continuous current, 20 Amp pulse current. ] 2 页

DIODES

FZT1047ATA [ 暂无描述 ] 4 页

ZETEX

FZT1047ATA [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

FZT1047ATC [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

FZT1048 [ 暂无描述 ] 3 页

ZETEX

FZT1048A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 3 页

KEXIN

FZT1048A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.247824s