ZC830/ A/ B
to
ZC836/ A/ B
SOT23 SILICON VARIABLE
CAPACITANCE DIODES
ISSUE 5 – J ANUARY 1998
1
3
FEATURES
2
*
*
*
Close Tolerance C-V Characteristics
High Tuning Ratio
1
Low IR
3
Enabling Excellent Phase Noise Performance
(IR Typically <200pA at 25V)
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
S YMBOL
IF
MAX
200
UNIT
Fo rw a rd Cu rre n t
m A
m W
°C
Po w e r Dis s ip a tio n a t Ta m b =25°C
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e
Pto t
330
Tj:Ts tg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
=25°C)
am b
PARAMETER
SYMBOL MIN
TYP
MAX
UNIT CONDITIONS
Re ve rs e Bre a kd o w n
Vo lta g e
VBR
25
V
IR=10µA
Re ve rs e Vo lta g e Le a ka g e
IR
0.2
10
nA
VR=20V
Te m p e ra tu re Co e fficie n t
o f Ca p a cita n ce
0.03
0.04
%/°C VR=3V, f=1MHz
η
TUNING CHARACTERISTICS (at T
=25°C)
am b
Nom inal Capacitance (pF)
VR=2V, f=1MHz
Minim um
Q
Capacitance Ratio
C2 / C20
PART NO
@ VR=3V
f=50MHz
at f=1MHz
MIN
NOM
10.0
15.0
22.0
33.0
47.0
68.0
100.0
MAX
MIN
4.5
4.5
5.0
5.0
5.0
5.0
5.0
MAX
6.0
ZC830A
9.0
11.0
16.5
24.2
36.3
51.7
74.8
110.0
300
300
200
200
200
100
100
ZC831A
ZC832A
ZC833A
ZC834A
ZC835A
ZC836A
Note:
13.5
19.8
29.7
42.3
61.2
90.0
6.0
6.5
6.5
6.5
6.5
6.5
No suffix ±20% (e.g. ZC830), suffix B ± 5% (e.g. ZC830B)
Spice param eter data is available upon request for this device
