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UZC829B

型号：

UZC829B

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

72 K

下载PDF手册
SOT23 SILICON VARIABLE  
CAPACITANCE DIODE  
ISSUE 3 – JANUARY 1998  
ZC829A  
FEATURES  
* VHF to UHF operation  
1
* Low IR  
2
* Enabling Excellent Phase Noise  
Performance  
1
* (IR Typically <200pA at 25V)  
APPLICATIONS  
3
* Mobile radios and Pagers  
* Cellular telephones  
* Voltage controlled Crystal Oscillators  
SOT23  
3
PARTMARKING DETAIL ZC829A – J9A  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
IF  
VALUE  
200  
UNIT  
mA  
mW  
°C  
Forward Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C ).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Reverse Breakdown  
Voltage  
VBR  
25  
V
IR = 10µA  
Reverse Leakage  
Current  
IR  
0.2  
8.2  
10  
VR = 20V  
nA  
Temperature Coefficient  
Diode Capacitance  
Capacitance Ratio  
Figure of Merit  
400  
9.02  
5.8  
ppm/°C VR = 3V, f=1MHz  
pF VR = 2V, f=1MHz  
η
Cd  
7.38  
4.3  
Cd / Cd  
Q
VR = 2V/20V, f=1MHz  
VR = 3V, f=50MHz  
250  
ZC829A  
TYPICAL CHARACTERISTICS  
200  
100  
1200  
Tj = 25 to 125°C  
800  
400  
0
10  
1
1
10  
100  
0.1  
1
10  
100  
VR - Reverse Voltage (V)  
VR - Reverse Voltage (V)  
Capacitance v Reverse Voltage  
Temp. Coefficient v Reverse Voltage  
Hyperabrupt Tuner Diodes  
Type  
Reverse  
Breakdown Capacitance at  
Voltage VR VR=2V f=1MHz  
Nominal  
Capacitance Q at Device  
Ratio at VR=3V Code  
f=1MHz f=50MHz  
Typ  
V
Ctot  
Min Typ Max Min Max  
pF pF pF  
C2/C20  
Corporate  
Employment  
Products  
TRAC  
ZC829A  
ZC830A  
ZC831A  
ZC832A  
ZC833A  
ZC834A  
ZC835A  
ZC836A  
25 7.38 8.2 9.02 4.3  
25 9.00 10.0 11.00 4.5  
25 13.50 15.0 16.50 4.5  
25 19.80 22.0 24.20 5.0  
25 29.70 33.0 36.30 5.0  
25 42.30 47.0 51.70 5.0  
25 61.20 68.0 74.80 5.0  
25 90.00 100.0 110.00 5.0  
5.8  
6.0  
6.0  
6.5  
6.5  
6.5  
6.5  
6.5  
250  
J1A  
J1A  
J2A  
J3A  
J4A  
J5A  
J6A  
J7A  
300  
300  
200  
200  
200  
100  
100  
Applications &  
Design  
Contact Zetex  
Distributors  
New Products  
News  
Devices are also available with 5% and 20% tolerances, No suffix = ±20%  
(e.g. ZC830) Suffix B = ± 5% (e.g. ZC830B)  
Search  
[Back] [Home] [Search] [Webmaster]  
Zetex plc, Fields New Road, Chadderton, Oldham, UK. tel. +44 (0) 161 622 4444 fax: +44 (0) 161 622 4420  
Copyright (c) 2000 Zetex plc.  
厂商 型号 描述 页数 下载

DIODES

 		UZC829A [ Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt, SOT-23, 3 PIN ] 2 页

DIODES

 		UZC829ATA [ Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

DIODES

 		UZC829ATC [ Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

ZETEX

 		UZC829B [ Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt, ] 6 页

DIODES

 		UZC829BTC [ Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

ZETEX

 		UZC830A [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, ] 6 页

DIODES

 		UZC830ATA [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

DIODES

 		UZC830ATC [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

DIODES

 		UZC830B [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, ] 2 页

DIODES

 		UZC830BTA [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

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