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IXTP90N055T

型号：

IXTP90N055T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

205 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTA90N055T  
IXTP90N055T  
VDSS = 55  
ID25 = 90  
RDS(on) ≤ 8.8 m Ω  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-263 (IXTA)  
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
55  
55  
V
V
G
S
VGSM  
Transient  
20  
V
(TAB)  
ID25  
ILRMS  
IDM  
TC = 25° C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
90  
75  
240  
A
A
A
TO-220 (IXTP)  
IAR  
EAS  
TC = 25° C  
TC = 25° C  
25  
400  
A
mJ  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 10 Ω  
3
V/ns  
G
(TAB)  
D
S
TC =25°C  
176  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
Weight  
TO-220  
TO-263  
3
2.5  
g
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
ꢀ
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 50 µA  
55  
V
V
Applications  
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
ꢀ
2.0  
4.0  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
- ABS Systems  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
250  
µA  
µA  
ꢀ
TJ = 150° C  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Note 1  
6.6  
8.8 m Ω  
ꢀ
Applications  
DS99624 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTA90N055T  
IXTP90N055T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
30  
55  
S
Ciss  
Coss  
Crss  
2500  
440  
pF  
pF  
pF  
113  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 10 Ω (External)  
19  
30  
40  
20  
ns  
ns  
ns  
ns  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
61  
15  
11  
nC  
nC  
nC  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
Qgd  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
RthJC  
RthCS  
0.85°C/W  
°C/W  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
TO-220  
0.50  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
Source-Drain Diode  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
Symbol  
Test Conditions  
Characteristic Values  
L1  
L2  
L3  
L4  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0 V  
90  
A
A
R
0.46  
0.74  
.018  
.029  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
240  
1.0  
TO-220 (IXTP) Outline  
V
IF = 25 A, -di/dt = 100 A/µs  
70  
ns  
VR = 25 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTA90N055T  
IXTP90N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
320  
280  
240  
200  
160  
120  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
40  
5V  
5V  
10  
0
0
2
4
6
8
12  
14  
16  
18  
20  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 45A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
6V  
I
= 90A  
D
I
= 45A  
D
5V  
1
0
0.2  
0.4  
0.6  
0.8  
1.2  
1.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 45A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.6  
2.4  
2.2  
2
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
GS  
External Lead Current Limit  
T = 175ºC  
J
- - - -  
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS CORPORATION All rights reserved  
IXTA90N055T  
IXTP90N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
160  
140  
120  
100  
80  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
25ºC  
T
J
= -40ºC  
25ºC  
150ºC  
150ºC  
60  
40  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
1.8  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
270  
240  
210  
180  
150  
120  
90  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 10A  
D
G
= 10mA  
T
J
= 150ºC  
60  
T
= 25ºC  
J
30  
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
QG - NanoCoulombs  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA90N055T  
IXTP90N055T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
R
= 10  
Ω
G
R
V
V
= 10  
Ω
G
V
V
= 10V  
GS  
DS  
T = 25ºC  
= 10V  
J
GS  
DS  
= 27.5V  
= 27.5V  
I
= 30A  
D
I
= 10A  
D
T = 125ºC  
J
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
90  
34  
32  
30  
28  
26  
24  
22  
20  
18  
42  
68  
65  
62  
59  
56  
53  
50  
47  
44  
41  
38  
35  
t r  
td(on)  
- - - -  
t f  
R
td(off)  
- - - -  
40  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
80  
70  
60  
50  
40  
30  
20  
10  
TJ = 125ºC, V = 10V  
GS  
I
= 30A  
= 10 , V = 10V  
Ω
D
G
GS  
V
= 27.5V  
DS  
V
= 27.5V  
DS  
I
= 10A  
D
I
= 10A  
D
I
= 30A  
D
10 12 14 16 18 20 22 24 26 28 30 32 34  
RG - Ohms  
25  
35  
45 55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Fig. 18. Resistive Turn-off  
Switching Times vs. Drain Current  
Switching Times vs. Gate Resistance  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
70  
66  
62  
58  
54  
50  
46  
42  
38  
34  
30  
110  
100  
90  
180  
160  
140  
120  
100  
80  
tf  
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
TJ = 125ºC  
V
DS = 27.5V  
80  
tf  
R
td(off)  
- - - -  
70  
I
= 10A  
D
= 10 , VGS = 10V  
Ω
G
60  
VDS = 27.5V  
50  
60  
T = 25ºC  
J
I
= 30A  
D
40  
40  
30  
20  
10 12 14  
16  
18  
20  
22  
24  
26  
28  
30  
10 12 14 16 18 20 22 24 26 28 30 32 34  
RG - Ohms  
ID - Amperes  
IXYS REF: T_90N055T (2V) 7-06-06.xls  
© 2006 IXYS CORPORATION All rights reserved  
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