PNP SILICON PLANAR
ZTX776
MEDIUM POWER TRANSISTOR
ISSUE 1 JULY 94
FEATURES
*
*
*
200 Volt VCEO
1 Amp continuous current
Ptot= 1 Watt
C
B
E
REFER TO ZTX755 FOR GRAPHS
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-200
-200
-5
V
V
Peak Pulse Current
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb=25°C
derate above Tamb=25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-200
-200
-5
IC=-100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
IC=-10mA, IB=0*
IE=-100µA, IC=0
VCB=-160V, IE=0
VEB=-4V, IC=0
Emitter-Base Breakdown V(BR)EBO
Voltage
V
Collector Cut-Off
Current
ICBO
-100
-100
nA
nA
Emitter Cut-Off Current
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
-0.5
V
V
IC=-500mA, IB=-50mA*
IC=-1A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.1
V
IC=-500mA, IB=-50mA*
Base-Emitter Turn-On
Voltage
-1.0
V
IC=-500mA, VCE=-5V*
Static Forward Current
Transfer Ratio
50
50
20
IC=-10mA, VCE=-5V
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
Transition
Frequency
fT
30
MHz
pF
IC=-10mA, VCE=-20V
f=20MHz
Output Capacitance
Cobo
20
VCB=-20V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3-270
