PNP SILICON PLANAR
ZTX752
ZTX753
MEDIUM POWER TRANSISTORS
ISSUE 2 JULY 94
FEATURES
*
*
*
*
100 Volt VCEO
2 Amp continuous current
Low saturation voltage
Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
ZTX752
-100
ZTX753
-120
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
A
A
-80
-100
-5
-6
-2
Peak Pulse Current
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
ZTX752
Tj:Tstg
-55 to +200
°C
= 25°C unless otherwise stated).
amb
ZTX753
PARAMETER
SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown
Voltage
V(BR)CBO -100
V(BR)CEO -80
V(BR)EBO -5
ICBO
-120
-100
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
-0.1
-10
VCB=-80V
VCB=-100V
VCB=-80V,T =100°C
VCB=-100V,T =100°C
µA
µA
µA
µA
-0.1
-10
Emitter Cut-Off
Current
IEBO
-0.1
-0.1
VEB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
VBE(on)
-0.17 -0.3
-0.30 -0.5
-0.17 -0.3
-0.30 -0.5
V
V
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
Base-Emitter
Saturation Voltage
-0.9 -1.25
-0.9 -1.25
V
IC=-1A, IB=-100mA*
Base-Emitter
Turn-On Voltage
-0.8 -1
-0.8 -1
V
IC=-1A, VCE=-2V*
3-260
