ZXMHC3A01T8
N-channel
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
am b
PARAMETER
S YMBOL
MIN.
TYP. MAX. UNIT CONDITIONS
S TATIC
Dra in -s o u rce b re a kd o w n vo lta g e
Ze ro g a te vo lta g e d ra in cu rre n t
Ga te -b o d y le a ka g e
V
30
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DS S
I
I
1.0
100
3.0
V
=30V, V =0V
GS
DS S
DS
GS
V
=±20V, V =0V
DS
GS S
Ga te -s o u rce th re s h o ld vo lta g e
S ta tic d ra in -s o u rce o n -s ta te
V
R
1.0
I = 250A, V =V
D DS GS
GS (th )
DS (o n )
0.12
0.18
⍀
V
= 10V, I = 2.5A
D
GS
GS
DS
(1)
re s is ta n ce
⍀
V
V
= 4.5V, I = 2.0A
D
(1) (3)
Fo rw a rd tra n s co n d u cta n ce
g
3.5
S
=4.5V, I = 2.5A
D
fs
(3)
DYNAMIC
In p u t ca p a cita n ce
C
C
C
190
38
pF
pF
pF
is s
V
= 25V, V =0V
GS
DS
Ou tp u t ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e tra n s fe r ca p a cita n ce
20
(2) (3)
S WITCHING
Tu rn -o n -d e la y tim e
Ris e tim e
t
t
t
t
1.7
2.3
6.6
2.9
3.9
0.6
0.9
ns
ns
d (o n )
V
R
= 15V, I = 2.5A
D
DD
r
≅ 6.0Ω, V = 10V
Tu rn -o ff d e la y tim e
Fa ll tim e
ns
G
GS
d (o ff)
f
ns
To ta l g a te ch a rg e
Ga te -s o u rce ch a rg e
Ga te d ra in ch a rg e
S OURCE-DRAIN DIODE
Q
Q
Q
nC
nC
nC
g
V
= 15V, V = 10V
GS
DS
g s
g d
I = 2.5A
D
(1)
Dio d e fo rw a rd vo lta g e
V
t
0.95
V
T =25°C, I = 1.7A,
j S
S D
V
=0V
GS
(3)
Re ve rs e re co ve ry tim e
17.7
13.0
ns
T =25°C, I = 2.5A,
rr
j
S
(3)
d i/d t=100A/s
Re ve rs e re co ve ry ch a rg e
Q
nC
rr
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction tem perature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE E - APRIL 2004
S E M IC O N D U C T O R S
4
