请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

FZT560A

型号：

FZT560A

品牌：

ETC[ ETC ]

页数：

12 页

PDF大小：

169 K

下载PDF手册
Index of /ds/FZ/  
Name  
Last modified  
Size Description  
Parent Directory  
FZT560.pdf  
03-Dec-99 15:45 44K  
03-Dec-99 15:45 44K  
22-Dec-99 00:08 28K  
03-Dec-99 15:45 44K  
03-Dec-99 15:45 44K  
22-Dec-99 00:08 27K  
22-Dec-99 00:08 44K  
FZT560A.pdf  
FZT649.pdf  
FZT660.pdf  
FZT660A.pdf  
FZT749.pdf  
FZT790A.pdf  
Discrete Power & Signal  
Technologies  
July 1998  
FZT560 / FZT560A  
C
E
C
B
SOT-223  
NPN Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT560/FZT560A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
60  
V
Collector-Base Voltage  
Emitter-Base Voltage  
80  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT560/FZT560A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt560.lwpPrNA 7/10/98 revC  
 
NPN Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
60  
80  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
250  
80  
-
IC = 100 mA, VCE = 2 V  
300  
550  
IC = 500 mA, VCE = 2 V FZT560  
FZT560A  
IC = 1 A, VCE = 2 V  
IC = 3 A, VCE = 2 V  
25  
Collector-Emitter Saturation Voltage  
300  
450  
400  
1.25  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA FZT560  
FZT560A  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
1
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
30  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
75  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
ã
1998 Fairchild Semiconductor Corporation  
Page 2 of 2  
fzt560.lwpPrNA 7/10/98 revC  
Discrete Power & Signal  
Technologies  
July 1998  
FZT649  
E
B
SOT-223  
NPN Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT649  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
25  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
35  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
3
A
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT649  
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
2
W
PD  
62.5  
°C/W  
RqJA  
Page 1 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
 
NPN Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
25  
35  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
75  
-
IC = 50 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
IC = 6 A, VCE = 2 V  
300  
15  
Collector-Emitter Saturation Voltage  
300  
600  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
1.25  
1
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
50  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
150  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
Page 3 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
Discrete Power & Signal  
Technologies  
July 1998  
FZT660 / FZT660A  
E
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT660/FZT660A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
60  
V
Collector-Base Voltage  
Emitter-Base Voltage  
80  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT660/FZT660A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt660.lwpPrPA 7/10/98 revC  
 
PNP Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
60  
80  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
250  
80  
-
IC = 100 mA, VCE = 2 V  
300  
550  
IC = 500 mA, VCE = 2 V FZT660  
FZT660A  
IC = 1 A, VCE = 2 V  
IC = 3 A, VCE = 2 V  
25  
Collector-Emitter Saturation Voltage  
300  
550  
500  
1.25  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA FZT660  
FZT660A  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
1
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
45  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
75  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
fzt660.lwpPrPA 7/10/98 revC  
Discrete Power & Signal  
Technologies  
July 1998  
FZT749  
E
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT749  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
25  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
35  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
3
A
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT749  
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
2
W
PD  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt749.lwpPrPC 7/10/98 revB  
 
PNP Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
25  
35  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
75  
-
IC = 50 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
IC = 6 A, VCE = 2 V  
300  
15  
Collector-Emitter Saturation Voltage  
300  
600  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
1.25  
1
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
100  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
100  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
fzt749.lwpPrPC 7/10/98 revB  
Discrete Power & Signal  
Technologies  
July 1998  
FZT790A  
C
E
C
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT790A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
40  
V
Collector-Base Voltage  
Emitter-Base Voltage  
50  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT790A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt790a.lwpPrPA 7/10/98 revB  
 
PNP Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
40  
50  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
300  
250  
200  
150  
800  
-
IC = 10 mA, VCE = 2 V  
IC = 500 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
Collector-Emitter Saturation Voltage  
250  
450  
750  
mV  
VCE(sat)  
IC = 500 mA, IB = 5 mA  
IC = 1 A, IB = 10 mA  
IC = 2 A, IB = 50 mA  
Base-Emitter Saturation Voltage  
1
V
-
VBE(sat)  
IC = 1 A, IB = 10 mA  
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
fT  
100  
IC = 50 mA,VCE = 5 V, f=50MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
fzt790a.lwpPrPA 7/10/98 revB  
厂商 型号 描述 页数 下载

ZETEX

 		FZT1047A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 4 页

KEXIN

 		FZT1047A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

DIODES

 		FZT1047A SOT223 NPN硅平面[ SOT223 NPN SILICON PLANAR ] 4 页

TYSEMI

 		FZT1047A 5安培连续电流20安培的脉冲电流。[ 5 Amp continuous current, 20 Amp pulse current. ] 2 页

DIODES

 		FZT1047ATA [ 暂无描述 ] 4 页

ZETEX

 		FZT1047ATA [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

 		FZT1047ATC [ Power Bipolar Transistor, 5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 4 页

DIODES

 		FZT1048 [ 暂无描述 ] 3 页

ZETEX

 		FZT1048A NPN硅平面中功率高增益晶体管[ NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ] 3 页

KEXIN

 		FZT1048A NPN硅平面中功率高增益晶体管[ NPN Silicon Planar Medium Power High Gain Transistor ] 2 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.277648s