IXTT1N300P3HV
IXTH1N300P3HV
Symbol
Test Conditions
Characteristic Values
TO-268HV Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
E
A
E1
L2
C2
gfs
VDS = 50V, ID = 0.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.4
0.7
S
3
D1
3
D
H
D2
Ciss
Coss
Crss
895
48
pF
pF
pF
1
2
D3
2
1
A1
L4
C
e
e
b
17
td(on)
tr
td(off)
tf
22
35
78
60
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 500V, ID = 0.5 • ID25
L3
A2
RG = 20 (External)
L
Qg(on)
Qgs
30.6
4.0
nC
nC
nC
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
15.7
RthJC
RthCS
0.64 C/W
C/W
TO-247HV
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
1.0
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
4.0
TO-247HV Outline
E1
E
A
R
0P
0P1
A2
1.5
V
Q
S
IF = 1A, -di/dt = 100A/μs, VR = 100V
1.8
μs
D1
D2
D
4
1
2
3
L1
A3
2X
D3
E2
E3
4X
A1
L
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
e
b
b1
c
e1
3X
3X
PINS:
1 - Gate 2 - Source
3, 4 - Drain
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
