IXTA/IXTP 3N120
IXTA/IXTP 3N110
TO-220 (IXTP) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, Note 1
1.5
2.2
S
Ciss
Coss
Crss
1050 1300
100 125
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
50
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 Ω (External),
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Qg(on)
Qgs
39
9
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
22
RthJC
RthCK
0.8
K/W
K/W
(TO-220)
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
3
12
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Note 1
A
V
TO-263(IXTA)Outline
1.5
IF = IS, -di/dt = 100 A/µs, VR = 100 V
700
ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1. Gate
2. Drain
3. Source
4. Drain
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
.160
Max.
.190
A
4.06
2.03
4.83
A1
2.79.080
.110
b
0.51
1.14
0.99
1.40
.020
.045
.039
.055
b2
c
0.46
1.14
0.74
1.40
.018
.045
.029
.055
c2
D
8.64
7.11
9.65
8.13
.340
.280
.380
.320
D1
E
9.65
6.86
2.54
10.29
8.13
.380
.270
.100
.405
.320
BSC
E1
e
BSC
L
14.61
15.88
.575
.625
L1
L2
L3
L4
2.2902.79.09.110
1.02
1.27
0
1.40
1.78
0.38
.040
.050
0
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
