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UZXTDAM832TA

型号:

UZXTDAM832TA

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

6 页

PDF大小:

216 K

ZXTDAM832  
MPPS™ Miniature Package Power Solutions  
DUAL 15V NPN LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
CEO  
V
=15V; R  
= 45m ; I = 4.5A  
SAT C  
DESCRIPTION  
Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package)  
outline, these new 4th generation low saturation dual transistors offer  
extremely low on state losses making them ideal for use in DC-DC circuits  
and various driving and power management functions.  
Additionally users gain several other key benefits:  
Performance capability equivalent to much larger packages  
Improved circuit efficiency & power levels  
PCB area and device placement savings  
Lower package height (nom. 0.9mm)  
3mm x 2mm (Dual die) MLP  
C1  
C2  
Reduced component count  
FEATURES  
Low Equivalent On Resistance  
B2  
B1  
Extremely Low Saturation Voltage (100mV @1A)  
h
characterised up to 12A  
FE  
I = 4.5A Continuous Collector Current  
C
E2  
E1  
3mm x 2mm MLP  
APPLICATIONS  
DC - DC Converters (FET Drivers)  
Charging circuits  
Power switches  
PINOUT  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXTDAM832TA  
ZXTDAM832TC  
7
؅؅
 
8mm  
8mm  
3000  
13
؅
؅
 
10000  
3mm x 2mm MLP  
underside view  
DEVICE MARKING  
DAA  
ISSUE 1 - JUNE 2002  
1
ZXTDAM832  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
40  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
CBO  
CEO  
EBO  
15  
V
7.5  
V
Peak Pulse Current  
I
I
I
I
15  
A
CM  
Continuous Collector Current (a)(f)  
Continuous Collector Current (b)(f)  
Base Current  
4.5  
A
C
C
B
5.0  
A
1000  
mA  
Power Dissipation at TA=25°C (a)(f)  
Linear Derating Factor  
P
P
P
P
P
P
1.5  
12  
W
D
D
D
D
D
D
mW/°C  
Power Dissipation at TA=25°C (b)(f)  
Linear Derating Factor  
2.45  
19.6  
W
mW/°C  
Power Dissipation at TA=25°C (c)(f)  
Linear Derating Factor  
1
8
W
mW/°C  
Power Dissipation at TA=25°C (d)(f)  
Linear Derating Factor  
1.13  
9
W
mW/°C  
Power Dissipation at TA=25°C (d)(g)  
Linear Derating Factor  
1.7  
13.6  
W
mW/°C  
Power Dissipation at TA=25°C (e)(g)  
Linear Derating Factor  
3
24  
W
mW/°C  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
83.3  
51  
UNIT  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
°C/W  
Junction to Ambient (a)(f)  
Junction to Ambient (b)(f)  
Junction to Ambient (c)(f)  
Junction to Ambient (d)(f)  
Junction to Ambient (d)(g)  
Junction to Ambient (e)(g)  
R
R
R
R
R
R
θJA  
θJA  
θJA  
θJA  
θJA  
θJA  
125  
111  
73.5  
41.7  
Notes  
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper  
area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads  
attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.  
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached.  
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached.  
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.  
(f) For a dual device with one active die.  
(g) For dual device with 2 active die running at equal power.  
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.  
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the  
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide  
tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.  
ISSUE 1 - JUNE 2002  
2
ZXTDAM832  
TYPICAL CHARACTERISTICS  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
V
T
amb=25°C  
CE(SAT)  
2oz Cu  
10  
1
Limited  
Note (e)(g)  
2oz Cu  
Note (a)(f)  
DC  
1oz Cu  
Note (d)(g)  
1s  
100ms  
0.1  
10ms  
1ms  
Note (a)(f)  
0.01 Single Pulse, Tamb=25°C  
0.1  
100us  
1oz Cu  
0.5  
0.0  
Note (d)(f)  
1
10  
0
25  
50  
75  
100 125 150  
V
Collector-Emitter Voltage (V)  
Safe Operating Area  
Temperature (°C)  
Derating Curve  
CE  
225  
200  
175  
150  
125  
100  
75  
Note (a)(f)  
80  
1oz copper  
Note (f)  
1oz copper  
Note (g)  
60  
40  
20  
0
D=0.5  
D=0.2  
2oz copper  
Note (f)  
Single Pulse  
D=0.05  
D=0.1  
50  
2oz copper  
Note (g)  
25  
0
100µ 1m 10m 100m  
1
10 100 1k  
0.1  
1
10  
100  
Pulse Width (s)  
BoardCuArea(sqcm)  
Transient Thermal Impedance  
Thermal Resistance v Board Area  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2oz copper  
Note (g)  
T
T
amb=25°C  
jmax=150°C  
Continuous  
2oz copper  
Note (f)  
1oz copper  
Note (g)  
1oz copper  
Note (f)  
0.1  
1
10  
100  
BoardCuArea(sqcm)  
Power Dissipation v Board Area  
ISSUE 1 - JUNE 2002  
3
ZXTDAM832  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
MIN.  
TYP. MAX. UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
40  
70  
V
I
=100A  
(BR)CBO  
(BR)CEO  
C
C
Collector-Emitter Breakdown  
Voltage  
15  
18  
V
I
=10mA*  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
7.5  
8.2  
V
I =100A  
E
(BR)EBO  
CBO  
I
I
I
25  
25  
25  
nA  
nA  
nA  
V
V
V
=32V  
CB  
Emitter Cut-Off Current  
=6V  
EBO  
EB  
Collector Emitter Cut-Off Current  
=12V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
8
14  
mV  
mV  
mV  
mV  
mV  
I
I
I
I
I
=0.1A, I =10mA*  
B
CE(sat)  
C
C
C
C
C
70  
100  
200  
280  
=1A, I =10mA*  
B
165  
240  
200  
=3A, I =50mA*  
B
=4.5A, I =50mA*  
B
=4.5A, I =100mA*  
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
0.94  
0.88  
1.00  
0.95  
V
V
I
I
=4.5A, I =50mA*  
B
BE(sat)  
BE(on)  
FE  
C
C
=4.5A, V =2V*  
CE  
Static Forward Current Transfer  
Ratio  
200  
300  
200  
150  
415  
450  
320  
240  
80  
I
I
I
I
I
=10mA, V =2V*  
CE  
C
C
C
C
C
=0.2A, V =2V*  
CE  
=3A, V =2V*  
CE  
=5A, V =2V*  
CE  
=12A, V =2V*  
CE  
Transition Frequency  
f
80  
120  
MHz  
I
=50mA, V =10V  
CE  
T
C
f=100MHz  
Output Capacitance  
Turn-On Time  
C
30  
40  
pF  
ns  
ns  
V
V
=10V, f=1MHz  
obo  
(on)  
(off)  
CB  
CC  
t
t
120  
160  
=10V, I =1A  
C
I
=I =10mA  
B1 B2  
Turn-Off Time  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ISSUE 1 - JUNE 2002  
4
ZXTDAM832  
TYPICAL CHARACTERISTICS  
1
100m  
10m  
1m  
0.25  
IC/IB=50  
0.20  
Tamb=25°C  
100°C  
25°C  
0.15  
0.10  
0.05  
0.00  
IC/IB=100  
IC/IB=50  
-55°C  
IC/IB=10  
100m  
1m  
10  
1m  
100m  
10  
IC10mCollector Current 1(A)  
IC10mCollector Current 1(A)  
VCE(SAT) vIC  
VCE(SAT) vIC  
630  
540  
450  
360  
270  
180  
90  
V =2V  
IC/IB=50  
CE  
1.0  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100°C  
25°C  
0.8  
0.6  
0.4  
-55°C  
25°C  
-55°C  
100°C  
100m  
0
IC10mCollector Current (A)  
1m  
100m  
1
10  
1m  
10  
IC10mCollector Current 1(A)  
h vIC  
VBE(SAT) vIC  
FE  
V =2V  
1.0  
0.8  
0.6  
0.4  
0.2  
CE  
-55°C  
25°C  
100°C  
1m  
10m  
100m  
1
10  
IC Collector Current (A)  
VBE(ON) vIC  
ISSUE 1 - JUNE 2002  
5
ZXTDAM832  
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)  
CONTROLLING DIMENSIONS IN MILLIMETRES  
APPROX. CONVERTED DIMENSIONS IN INCHES  
MLP832 PACKAGE DIMENSIONS  
MILLIMETRES  
INCHES  
MILLIMETRES  
MIN. MAX.  
0.65 REF  
2.00 BSC  
INCHES  
MIN. MAX.  
DIM  
DIM  
MIN.  
0.80  
0.00  
0.65  
0.15  
0.24  
0.17  
MAX.  
1.00  
0.05  
0.75  
0.25  
0.34  
0.30  
MIN.  
MAX.  
0.039  
A
A1  
A2  
A3  
b
0.031  
0.00  
e
E
0.0256 BSC  
0.0787 BSC  
0.002  
0.0255  
0.006  
0.009  
0.0066  
0.0295  
0.0098  
0.013  
E2  
E4  
L
0.43  
0.63  
0.36  
0.017  
0.0249  
0.014  
0.16  
0.20  
0.006  
0.0078  
0.00  
0.45  
0.0157  
0.005  
b1  
D
0.0118  
L2  
r
0.125  
3.00 BSC  
0.118 BSC  
0.075 BSC  
0.0029 BSC  
D2  
0.82  
1.02  
0.032  
0.040  
0Њ  
12Њ  
0Њ  
12Њ  
© Zetex plc 2002  
Europe  
Americas  
Asia Pacific  
Zetex (Asia) Ltd  
Zetex plc  
Zetex GmbH  
Zetex Inc  
Fields New Road  
Chadderton  
Oldham, OL9 8NP  
United Kingdom  
Telephone (44) 161 622 4422  
Fax: (44) 161 622 4420  
uksales@zetex.com  
Streitfeldstraße 19  
D-81673 München  
700 Veterans Memorial Hwy  
Hauppauge, NY11788  
3701-04 Metroplaza, Tower 1  
Hing Fong Road  
Kwai Fong  
Germany  
USA  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (631) 360 2222  
Fax: (631) 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - JUNE 2002  
6
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