ZXTD3M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
-50
UNIT
V
Co lle cto r-Ba s e Vo lta g e
Co lle cto r-Em itte r Vo lta g e
Em itte r-Ba s e Vo lta g e
V
V
V
CBO
CEO
EBO
-40
V
-7.5
-4
V
Pe a k Pu ls e Cu rre n t
I
I
I
A
CM
(a ) (f)
Co n tin u o u s Co lle cto r Cu rre n t
-3
A
C
B
Ba s e Cu rre n t
-1000
m A
(a )(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
P
P
P
P
P
P
1.5
12
W
m W/ЊC
D
D
D
D
D
D
(b )(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
2.45
19.6
W
m W/ЊC
(c)(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1
8
W
m W/ЊC
(d )(f)
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1.13
9
W
m W/ЊC
(d )(g )
Po w e r Dis s ip a tio n a t TA=25°C
Lin e a r De ra tin g Fa cto r
1.7
13.6
W
m W/ЊC
(e )(g )
Po w e r Dis s ip a tio n a t TA=25°C
3
W
Lin e a r De ra tin g Fa cto r
24
m W/ЊC
Op e ra tin g & S to ra g e Te m p e ra tu re Ra n g e
J u n ctio n Te m p e ra tu re
T :T
-55 to +150
150
ЊC
ЊC
j
s tg
T
j
THERMAL RESISTANCE
PARAMETER
S YMBOL
VALUE
83.3
51
UNIT
ЊC/W
ЊC/W
ЊC/W
ЊC/W
ЊC/W
ЊC/W
(a )(f)
J u n ctio n to Am b ie n t
R
R
R
R
R
R
⍜J A
⍜J A
⍜J A
⍜J A
⍜J A
⍜J A
(b )(f)
J u n ctio n to Am b ie n t
(b )(f)
J u n ctio n to Am b ie n t
125
(d )(f)
J u n ctio n to Am b ie n t
111
(d )(g )
J u n ctio n to Am b ie n t
73.5
41.7
(e )(g )
J u n ctio n to Am b ie n t
NOTES
(a) For a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at tϽ5 secs for a dual device surface m ounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all
exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual
device.
(c) For a dual device surface m ounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions w ith m inim al lead connections only.
(d) For a dual device surface m ounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface m ounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions w ith all exposed pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width lim ited by m ax junction tem perature. Refer to Transient Therm al Im pedance graph.
(i) The m inim um copper dim ensions required for m ounting are no sm aller than the exposed m etal pads on the base of the device as shown in the
package dim ensions data. The therm al resistance for a dual device m ounted on 1.5m m thick FR4 board using m inim um copper of 1 oz weight,
1m m wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=500m W
ISSUE 1 - J UNE 2003
2
S E M IC O N D U C T O R S
