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UZXT12N50DXTA

型号：

UZXT12N50DXTA

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

258 K

下载PDF手册
ZXT12N50DX  
SuperSOT4™  
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=50V; RSAT = 45m ; IC= 3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
matrix structure combined with advanced assembly techniques to give  
extremely low on state losses. This makes it ideal for high efficiency, low  
voltage switching applications.  
MSOP8  
FEATURES  
•
•
•
•
•
Extremely Low Equivalent On Resistance  
Extremely Low Saturation Voltage  
hFE characterised up to 5A  
C1  
C2  
IC=3A Continuous Collector Current  
MSOP8 package  
B1  
B2  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Power switches  
E1  
E2  
Motor control  
E1  
B1  
E2  
C1  
C1  
C2  
C2  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
B2  
ZXT12N50DXTA  
ZXT12N50DXTC  
7
12mm embossed 1000 units  
Top View  
12mm embossed  
13  
4000 units  
DEVICE MARKING  
T12N50DX  
ISSUE 1 - MARCH 2000  
1
ZXT12N50DX  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
100  
50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
CBO  
CEO  
EBO  
V
7.5  
10  
V
I
I
I
A
CM  
Continuous Collector Current  
Base Current  
3
A
C
B
500  
mA  
Power Dissipation at TA=25°C (a)(d)  
Linear Derating Factor  
P
P
P
0.87  
6.9  
W
D
D
D
mW/°C  
Power Dissipation at TA=25°C (a)(e)  
Linear Derating Factor  
1.04  
8.3  
W
mW/°C  
Power Dissipation at TA=25°C (b)(d)  
Linear Derating Factor  
1.25  
10  
W
mW/°C  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
°C/W  
°C/W  
°C/W  
Junction to Ambient (a)(d)  
Junction to Ambient (b)(d)  
Junction to Ambient (a)(e)  
R
R
R
143  
100  
120  
θJA  
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
Impedance graph.  
(d) For device with one active die.  
(e) For device with two active die running at equal power.  
ISSUE 1 - MARCH 2000  
2
ZXT12N50DX  
CHARACTERISTICS  
ISSUE 1 - MARCH 2000  
3
ZXT12N50DX  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base Breakdown  
Voltage  
V
V
V
100  
200  
V
I =100␮A  
(BR)CBO  
(BR)CEO  
C
Collector-Emitter Breakdown  
Voltage  
50  
65  
V
I =10mA*  
C
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
7.5  
8.5  
V
I =100␮A  
E
(BR)EBO  
CBO  
I
I
I
100  
100  
100  
nA  
nA  
nA  
V
V
V
=80V  
=6V  
CB  
Emitter Cut-Off Current  
EBO  
EB  
Collector Emitter Cut-Off Current  
=80V  
CES  
CES  
Collector-Emitter Saturation  
Voltage  
V
11  
95  
190  
135  
13  
120  
250  
175  
mV  
mV  
mV  
mV  
I =0.1A, I =10mA*  
C B  
CE(sat)  
I =1A, I =10mA*  
C
B
I =3A, I =50mA*  
C B  
I =3A, I =300mA*  
C
B
Base-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
V
V
h
0.9  
0.95  
V
V
I =3A, I =50mA*  
C B  
BE(sat)  
BE(on)  
FE  
0.83 0.9  
I =3A, V =2V*  
C CE  
Static Forward Current Transfer  
Ratio  
250  
300  
150  
50  
400  
450  
250  
100  
I =10mA, V =2V*  
C CE  
900  
I =1A, V =2V*  
C
CE  
I =3A, V =2V*  
C
CE  
I =5A, V =2V*  
C
CE  
Transition Frequency  
f
132  
MHz  
I =50mA, V =10V  
T
C
CE  
f=50MHz  
Output Capacitance  
Turn-On Time  
C
26  
pF  
ns  
ns  
V
=10V, f=1MHz  
CB  
obo  
(on)  
(off)  
t
t
115  
1000  
V
=10V, I =1A  
CC C  
=I =20mA  
I
B1 B2  
Turn-Off Time  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ISSUE 1 - MARCH 2000  
4
ZXT12N50DX  
TYPICAL CHARACTERISTICS  
ISSUE 1 - MARCH 2000  
5
ZXT12N50DX  
PAD LAYOUT DETAILS  
PACKAGE DIMENSIONS  
D
8
7
2
6
3
5
4
1
e X 6  
θ°  
L
B
C
Conforms to JEDEC MO-187 Iss A  
DIM  
Millimetres  
Inches  
MIN  
MIN  
MAX  
MAX  
0.043  
0.006  
0.016  
0.009  
0.122  
BSC  
A
A1  
B
1.10  
0.15  
0.40  
0.23  
3.10  
BSC  
3.10  
BSC  
0.70  
6°  
0.05  
0.25  
0.13  
2.90  
0.65  
2.90  
4.90  
0.40  
0°  
0.002  
0.010  
0.005  
0.114  
0.0256  
0.114  
0.193  
0.016  
0°  
C
D
e
E
0.122  
BSC  
H
L
0.028  
6°  
q°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
agents and distributors in  
major countries world-wide  
© Zetex plc 2000  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - MARCH 2000  
6
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