ZXSDS2M832
ABSOLUTE MAXIMUM RATINGS
PARAMETER
S YMBOL
LIMIT
UNIT
V
Reverse Voltage
V
V
60
600
R
F
Forward Voltage @ I = 1000mA
F
mV
A
Forward Current
I
I
I
1.65
1.24
16.8
5.63
1.2
F
Average Forward Current D=50%, t<=300us
Non Repetitive Forward Current t<=100us
Non Repetitive Forward Current t<=10ms
A
FAV
A
FSM
A
(a)(f)
Power Dissipation at TA=25°C
P
P
P
P
P
P
W
D
D
D
D
D
D
Linear Derating Factor
12
mW/°C
W
(b)(f)
Power Dissipation at TA=25°C
2
Linear Derating Factor
20
mW/°C
W
(c)(f)
Power Dissipation at TA=25°C
0.8
Linear Derating Factor
8
mW/°C
W
(d)(f)
Power Dissipation at TA=25°C
0.9
Linear Derating Factor
9
mW/°C
W
(d)(g)
Power Dissipation at TA=25°C
1.36
13.6
2.4
Linear Derating Factor
mW/°C
W
(e)(g)
Power Dissipation at TA=25°C
Linear Derating Factor
24
mW/°C
°C
Storage Temp, Range
Tstg
Tj
-55 to+150
-55 to+125
Operating & Storage Temp, Range
°C
THERMAL RESISTANCE
PARAMETER
S YMBOL
RJA
VALUE
83.3
51
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
(a)(f)
Junction to Ambient
(b)(f)
Junction to Ambient
RJA
(c)(f)
Junction to Ambient
RJA
125
(d)(f)
Junction to Ambient
RJA
111
(d)(g)
Junction to Ambient
RJA
73.5
41.7
(e)(g)
Junction to Ambient
RJA
NOTES
(a) For a dual device surface mounted on 8 sq. cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed pads attached. The
copper area is split down the center line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions w ith all exposed
pads attached. The copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper FR4 PCB, in still air conditions w ith m inim al lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper FR4 PCB, in still air conditions w ith all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper FR4 PCB, in still air conditions w ith all exposed pads attached. The
copper area is split down the centerline into two separate areas with one half connected to each half of the dual device.
(f) For dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in
the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper of 1 oz
weight, 1mm wide tracks and one half of the device active is Rth= 250°C/W giving a power rating of Ptot=400mW.
ISSUE 2 J une 2003
2
S E M IC O N D U C T O R S
