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UZXMN6A11GTA

型号：

UZXMN6A11GTA

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

8 页

PDF大小：

589 K

下载PDF手册
ZXMN6A11G  
60V SOT223 N-channel enhancement mode MOSFET  
Summary  
V
R
(⍀)  
I (A)  
(BR)DSS  
DS(on)  
D
0.120 @ V = 10V  
4.4  
3.5  
GS  
60  
0.180 @ V = 4.5V  
GS  
Description  
This new generation trench MOSFET from Zetex features a unique  
structure combining the benefits of low on-resistance and fast  
switching, making it ideal for high efficiency power management  
applications.  
Features  
D
S
•
•
•
•
•
Low on-resistance  
Fast switching speed  
Low threshold  
G
Low gate drive  
SOT223 package  
Applications  
•
•
•
•
DC-DC converters  
Power management functions  
Disconnect switches  
Motor control  
S
D
G
D
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
Pinout - top view  
ZXMN6A11GTA  
Device marking  
7
12  
1,000  
ZXMN  
6A11  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
ZXMN6A11G  
Absolute maximum ratings  
Parameter  
Symbol  
V
Limit  
Unit  
Drain-source voltage  
60  
V
DSS  
Gate-source voltage  
V
20  
V
A
GS  
(b)  
(b)  
(a)  
I
4.4  
Continuous drain current @ V = 10V; T  
=25°C  
=70°C  
=25°C  
D
GS  
amb  
amb  
amb  
3.5  
3.1  
@ V = 10V; T  
GS  
@ V = 10V; T  
GS  
(c)  
I
15.6  
5
A
A
Pulsed drain current  
DM  
(b)  
I
Continuous source current (body diode)  
S
(c)  
I
15.6  
2.0  
A
Pulsed source current (body diode)  
SM  
(a)  
P
W
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
=25°C  
D
amb  
16  
mW/°C  
W
(b)  
P
3.9  
=25°C  
D
amb  
31  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to +150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
62.5  
°C/W  
Junction to ambient  
⍜JA  
(b)  
R
32  
°C/W  
Junction to ambient  
⍜JA  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air  
conditions.  
(b)For a device surface mounted on FR4 PCB measured at t Յ10 sec.  
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction  
temperature.  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
ZXMN6A11G  
Typical characteristics  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
ZXMN6A11G  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min. Typ. Max. Unit Conditions  
Static  
Drain-source breakdown voltage V  
60  
V
␮A  
nA  
V
I = 250␮A, V =0V  
D GS  
(BR)DSS  
Zero gate voltage drain current  
Gate-body leakage  
I
I
1.0  
V
= 60V, V =0V  
GS  
DSS  
DS  
GS  
100  
V
= 20V, V =0V  
DS  
GSS  
Gate-source threshold voltage  
Static drain-source on-state  
resistance  
V
R
1.0  
I = 250␮A, V =VGS  
D DS  
GS(th)  
DS(on)  
0.120  
0.180  
⍀
V
= 10V, I = 2.5A  
D
GS  
GS  
DS  
(*)  
⍀
V
V
= 4.5V, I = 2A  
D
(*)(‡)  
g
4.9  
S
= 15V, I = 2.5A  
Forward transconductance  
fs  
D
(‡)  
Dynamic  
Input capacitance  
C
330  
35.2  
17.1  
pF  
pF  
pF  
V
= 40V, V =0V  
DS GS  
iss  
f=1MHz  
Output capacitance  
C
oss  
rss  
Reverse transfer capacitance  
C
(†) (‡)  
Switching  
Turn-on-delay time  
Rise time  
t
t
t
t
1.95  
3.5  
8.2  
4.6  
3.0  
ns  
ns  
ns  
ns  
nC  
V
= 30V, I = 2.5A  
DD D  
d(on)  
R ≅6.0⍀, V = 10V  
G
GS  
r
Turn-off delay time  
Fall time  
d(off)  
f
Gate charge  
Q
V
= 15V, V = 5V  
DS GS  
g
I = 2.5A  
D
Total gate charge  
Gate-source charge  
Gate drain charge  
Source-drain diode  
Q
Q
Q
5.7  
nC  
nC  
nC  
V
= 15V, V = 10V  
DS GS  
g
I = 2.5A  
D
1.25  
0.86  
gs  
gd  
(*)  
V
0.85 0.95  
V
T =25°C, I = 2.8A,  
Diode forward voltage  
SD  
j
S
V
=0V  
GS  
(‡)  
t
21.5  
20.5  
ns T =25°C, I = 2.5A,  
j S  
Reverse recovery time  
rr  
di/dt=100A/␮s  
(‡)  
Q
nC  
Reverse recovery charge  
rr  
NOTES:  
(*) Measured under pulsed conditions. Pulse width Յ300␮s; duty cycle Յ2%.  
(†) Switching characteristics are independent of operating junction temperature.  
(‡) For design aid only, not subject to production testing.  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
ZXMN6A11G  
Typical characteristics  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
ZXMN6A11G  
Typical characteristics  
Current  
regulator  
QG  
50k  
Same as  
D.U.T  
12V  
QGS  
QGD  
VG  
VDS  
IG  
D.U.T  
ID  
VGS  
Charge  
Basic gate charge waveform  
Gate charge test circuit  
VDS  
90%  
RD  
VGS  
VDS  
RG  
VCC  
10%  
VGS  
td(on)  
tr  
td(off)  
tr  
t(on)  
t(on)  
Switching time waveforms  
Switching time test circuit  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
ZXMN6A11G  
Intentionally left blank  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
7
www.zetex.com  
ZXMN6A11G  
Package outline - SOT223  
DIM  
Millimeters  
Min Max  
Inches  
Min  
DIM  
Millimeters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
A
A1  
b
-
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
0.0905 BSC  
0.181 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 4 - September 2006  
© Zetex Semiconductors plc 2006  
8
www.zetex.com  
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