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UZXMN6A11GFTA

型号：

UZXMN6A11GFTA

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

7 页

PDF大小：

1024 K

下载PDF手册
ZXMN6A11G  
60V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= 60V; R  
= 0.14 I = 3.8A  
DS(ON) D  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure  
that combines the benefits of low on-resistance with fast switching speed. This  
makesthemidealforhighefficiency, lowvoltage, powermanagement applications.  
FEATURES  
SOT223  
•
•
•
•
•
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT223 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Relay and Solenoid driving  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN6A11GFTA  
ZXMN6A11GFTC  
7”  
12mm  
12mm  
1000 units  
4000 units  
13”  
DEVICE MARKING  
•
ZXMN  
6A11  
Top View  
ISSUE 1 - MARCH 2002  
1
ZXMN6A11G  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
LIMIT  
60  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
V
V
A
DSS  
GS  
20  
Continuous Drain Current V  
=10V; T =25°C(b)  
I
3.8  
3.0  
2.7  
GS  
GS  
GS  
A
D
V
V
=10V; T =70°C(b)  
A
=10V; T =25°C(a)  
A
Pulsed Drain Current (c)  
I
I
I
10  
5
A
A
A
DM  
S
Continuous Source Current (Body Diode) (b)  
Pulsed Source Current (Body Diode)(c)  
10  
SM  
Power Dissipation at T =25°C (a)  
A
P
2.0  
16  
W
mW/°C  
D
Linear Derating Factor  
Power Dissipation at T =25°C (b)  
A
P
3.9  
31  
W
mW/°C  
D
Linear Derating Factor  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
62.5  
32  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
R
R
θJA  
θJA  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature.  
ISSUE 1 - MARCH 2002  
2
ZXMN6A11G  
CHARACTERISTICS  
ISSUE 1 - MARCH 2002  
3
ZXMN6A11G  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V
60  
V
I
=250␮A, V  
=0V  
(BR)DSS  
DSS  
D
GS  
=60V, V =0V  
I
I
1
␮A  
nA  
V
V
V
I
DS  
GS  
=±20V, V  
100  
=0V  
GSS  
GS  
DS  
= V  
GS  
Gate-Source Threshold Voltage  
V
R
1.0  
=250␮A, V  
GS(th)  
DS(on)  
DS  
=10V, I =4.4A  
D
Static Drain-Source On-State  
Resistance (1)  
0.140  
0.250  
V
V
⍀
⍀
GS  
GS  
D
=4.5V, I =3.8A  
D
Forward Transconductance (3)  
DYNAMIC (3)  
g
4.9  
S
V
=15V,I =2.5A  
D
fs  
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
C
C
C
330  
35.2  
17.1  
pF  
pF  
pF  
iss  
V
=40 V, V  
=0V,  
DS  
GS  
oss  
rss  
f=1MHz  
t
t
t
t
1.95  
3.5  
8.2  
4.6  
3.0  
ns  
ns  
ns  
ns  
nC  
d(on)  
V
R
=30V, I =2.5A  
D
DD  
r
=6.0⍀, V  
=10V  
GS  
G
Turn-Off Delay Time  
Fall Time  
d(off)  
f
(refer to test circuit)  
Gate Charge  
Q
V
=15V, V  
=5V,  
GS  
g
DS  
I
=2.5A  
D
Total Gate Charge  
Q
Q
Q
5.7  
nC  
g
V
=15V,V  
=10V,  
GS  
DS  
Gate-Source Charge  
Gate-Drain Charge  
1.25  
0.86  
nC ID=2.5A  
gs  
gd  
(refer to test circuit)  
nC  
V
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
V
0.85  
0.95  
T =25°C, I =2.8A,  
SD  
J
S
V
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge (3)  
NOTES  
t
21.5  
20.5  
ns  
T =25°C, I =2.5A,  
J F  
rr  
di/dt= 100A/µs  
Q
nC  
rr  
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - MARCH 2002  
4
ZXMN6A11G  
TYPICAL CHARACTERISTICS  
ISSUE 1 - MARCH 2002  
5
ZXMN6A11G  
TYPICAL CHARACTERISTICS  
ISSUE 1 - MARCH 2002  
6
ZXMN6A11G  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
4.6  
2.0 min  
(3x)  
2.3  
1.5 min  
(3x)  
6.8  
2.0 min  
3.8 min  
PACKAGE DIMENSIONS  
MILLIMETRES  
MILLIMETRES  
DIM  
DIM  
MIN  
ᎏ
MAX  
1.80  
0.10  
1.65  
0.84  
3.10  
0.33  
MIN  
6.30  
MAX  
6.70  
A
D
e
A1  
A2  
b
0.02  
1.55  
0.66  
2.90  
0.23  
2.30 BASIC  
4.60 BASIC  
e1  
E
6.70  
7.30  
3.70  
ᎏ
b2  
C
E1  
L
3.30  
0.90  
© Zetex plc 2002  
Zetex plc  
Fields New Road  
Chadderton  
Oldham, OL9 8NP  
United Kingdom  
Zetex GmbH  
Streitfeldstraße 19  
D-81673 München  
Zetex Inc  
700 Veterans Memorial Hwy  
Hauppauge, NY11788  
Zetex (Asia) Ltd  
3701-04 Metroplaza, Tower 1  
Hing Fong Road  
Kwai Fong  
Hong Kong  
Germany  
USA  
Telephone (44) 161 622 4422  
Fax: (44) 161 622 4420  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
Telephone: (631) 360 2222  
Fax: (631) 360 8222  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - MARCH 2002  
7
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