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UZXMN6A09KTC

型号:

UZXMN6A09KTC

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

8 页

PDF大小:

618 K

ZXMN6A09K  
60V N-channel enhancement mode MOSFET in DPAK  
Summary  
V
=60V : R  
=0.040; I =12.2A  
DS(on) D  
(BR)DSS  
Description  
This new generation of trench MOSFETs from Zetex utilizes a unique  
structure that combines the benefits of low on-resistance with fast  
switching speed. This makes them ideal for high efficiency, low voltage  
power management applications.  
Features  
D
S
Low on-resistance  
Fast switching speed  
Low threshold  
G
Low gate drive  
DPAK (T0-252) package  
Applications  
DC-DC converters  
D
D
Power management functions  
Disconnect switches  
Motor control  
G
S
Pinout - top view  
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMN6A09KTC  
13  
16  
2500  
Device marking  
ZXMN  
6A09K  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
1
www.zetex.com  
ZXMN6A09K  
Absolute maximum ratings  
Parameter  
Symbol  
V
Limit  
Unit  
Drain-source voltage  
60  
V
DSS  
Gate-source voltage  
V
20  
V
A
GS  
(b)  
(b)  
(a)  
I
12.2  
Continuous drain current @ V =10V; T  
=25°C  
=70°C  
=25°C  
D
GS  
amb  
amb  
amb  
9.8  
7.9  
@ V =10V; T  
GS  
@ V =10V; T  
GS  
(c)  
I
43  
10.8  
43  
A
A
Pulsed drain current  
DM  
(b)  
I
Continuous source current (body diode)  
S
(c)  
I
A
Pulsed source current (body diode)  
SM  
(a)  
P
4.3  
W
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
Power dissipation at T  
Linear derating factor  
=25°C  
=25°C  
=25°C  
D
amb  
amb  
amb  
34.4  
10.1  
mW/°C  
W
(a)  
(a)  
P
D
80.8  
2.15  
mW/°C  
W
P
D
17.2  
mW/°C  
°C  
Operating and storage temperature range  
T , T  
-55 to +150  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
(a)  
R
29  
°C/W  
Junction to ambient  
JA  
(b)  
R
12.3  
58.1  
°C/W  
°C/W  
Junction to ambient  
JA  
(d)  
R
Junction to ambient  
JA  
NOTES:  
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in  
still air conditions.  
(b)For a device surface mounted on FR4 PCB measured at t 10 sec.  
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300s - pulse width limited by maximum  
junction temperature.  
(d)For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in  
still air conditions.  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
2
www.zetex.com  
ZXMN6A09K  
Characteristics  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
3
www.zetex.com  
ZXMN6A09K  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Static  
Symbol  
Min. Typ. Max. Unit Conditions  
Drain-source breakdown voltage V  
60  
V
A  
nA  
V
I = 250A, V =0V  
D GS  
(BR)DSS  
Zero gate voltage drain current  
Gate-body leakage  
I
I
1
V
= 60V, V =0V  
GS  
DSS  
DS  
GS  
100  
V
= 20V, V =0V  
DS  
GSS  
Gate-source threshold voltage  
Static drain-source on-state  
resistance  
V
R
1.0  
3.0  
I = 250A, V =V  
D DS GS  
GS(th)  
DS(on)  
0.040  
0.060  
V
= 10V, I = 7.3A  
D
GS  
GS  
DS  
(*)  
V
V
= 4.5V, I = 5.6A  
D
(*)(‡)  
g
15  
S
= 15V, I = 7.3A  
Forward transconductance  
fs  
D
(‡)  
Dynamic  
Input capacitance  
C
1426  
134  
64  
pF  
pF  
pF  
V
= 30V, V =0V  
DS GS  
iss  
f=1MHz  
Output capacitance  
C
oss  
rss  
Reverse transfer capacitance  
C
(†) (‡)  
Switching  
Turn-on-delay time  
Rise time  
t
t
t
t
4.8  
4.6  
ns  
ns  
ns  
ns  
nC  
V
= 30V, I = 1A  
DD D  
d(on)  
R 6.0, V = 10V  
(refer to test circuit)  
G
GS  
r
Turn-off delay time  
Fall time  
32.5  
14.5  
15  
d(off)  
f
Total gate charge  
Q
V
= 30V, V = 4.5V  
DS GS  
g
I = 5.6A  
D
Total gate charge  
Gate-source charge  
Gate drain charge  
Source-drain diode  
Q
Q
Q
29  
7.0  
4.7  
nC  
nC  
nC  
V
= 30V, V = 10V  
DS GS  
g
I = 7.3A  
D
gs  
gd  
(*)  
V
0.85 0.95  
V
T =25°C, I = 6.6A,  
Diode forward voltage  
SD  
j
S
VGS=0V  
(‡)  
t
25.6  
26.0  
ns T =25°C, I = 3A,  
j S  
Reverse recovery time  
rr  
di/dt=100A/s  
(‡)  
Q
nC  
Reverse Recovery charge  
rr  
NOTES:  
(*) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.  
(†) Switching characteristics are independent of operating junction temperature.  
(‡) For design aid only, not subject to production testing.  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
4
www.zetex.com  
ZXMN6A09K  
Typical characteristics  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
5
www.zetex.com  
ZXMN6A09K  
Typical characteristics  
Current  
regulator  
QG  
50k  
Same as  
D.U.T  
12V  
QGS  
QGD  
VG  
VDS  
IG  
D.U.T  
ID  
VGS  
Charge  
Basic gate charge waveform  
Gate charge test circuit  
VDS  
90%  
RD  
VGS  
VDS  
RG  
VCC  
10%  
VGS  
td(on)  
tr  
td(off)  
tr  
t(on)  
t(on)  
Switching time waveforms  
Switching time test circuit  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
6
www.zetex.com  
ZXMN6A09K  
Package outline - DPAK  
DIM  
Inches  
Min  
0.086  
-
Millimeters  
DIM  
Inches  
Min Max  
0.090 BSC  
Millimeters  
Max  
0.094  
0.005  
0.035  
0.045  
0.215  
0.024  
0.023  
0.245  
-
Min  
2.18  
-
Max  
2.39  
0.127  
0.89  
1.14  
5.46  
0.61  
0.584  
6.22  
-
Min  
Max  
A
A1  
b
b2  
b3  
c
c2  
D
D1  
E
e
H
L
2.29 BSC  
0.370  
0.055  
0.410  
0.070  
9.40  
1.40  
10.41  
1.78  
0.020  
0.030  
0.205  
0.018  
0.018  
0.213  
0.205  
0.250  
0.170  
0.508  
0.762  
5.21  
0.457  
0.457  
5.41  
5.21  
6.35  
4.32  
L1  
L2  
L3  
L4  
L5  
θ1°  
θ°  
-
0.108 REF  
0.020 BSC  
2.74 REF  
0.508 BSC  
0.035  
0.065  
0.040  
0.060  
10°  
0.89  
1.65  
1.016  
1.52  
10°  
0.025  
0.045  
0°  
0.635  
1.14  
0°  
0.265  
-
6.73  
-
0°  
15°  
0°  
15°  
E1  
-
-
-
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
7
www.zetex.com  
ZXMN6A09K  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  
service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  
arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  
tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  
opportunity or consequential loss in the use of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  
company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  
representation relating to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  
when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  
regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  
The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  
of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  
Devices suspected of being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  
ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  
the use of hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  
WEEE and ELV directives.  
Product status key:  
“Preview”  
“Active”  
Future device intended for production at some point. Samples may be available  
Product status recommended for new designs  
“Last time buy (LTB)”  
Device will be discontinued and last time buy period and delivery is in effect  
“Not recommended for new designs” Device is still in production to support existing designs and production  
“Obsolete”  
Production has been discontinued  
Datasheet status key:  
“Draft version”  
This term denotes a very early datasheet version and contains highly provisional information, which  
may change in any manner without notice.  
“Provisional version”  
“Issue”  
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  
However, changes to the test conditions and specifications may occur, at any time and without notice.  
This term denotes an issued datasheet containing finalized specifications. However, changes to  
specifications may occur, at any time and without notice.  
Zetex sales offices  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
© 2007 Published by Zetex Semiconductors plc  
Issue 5 - January 2007  
© Zetex Semiconductors plc 2007  
8
www.zetex.com  
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