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UZXMN3A03E6TA

型号:

UZXMN3A03E6TA

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

185 K

ZXMN3A03E6  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS = 30V; RDS(ON) = 0.050 ID = 4.6A  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure  
that combines the benefits of low on-resistance with fast switching speed. This  
makes them ideal for high efficiency, low voltage, power management  
applications.  
SOT23-6  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23-6 package  
APPLICATIONS  
DC - DC converters  
Power management functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN3A03E6TA  
ZXMN3A03E6TC  
7”  
8mm  
8mm  
3000 units  
13”  
10000 units  
DEVICE MARKING  
3A3  
Top View  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
1
ZXMN3A03E6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
30  
UNIT  
Drain-source voltage  
Gate source voltage  
V
V
V
V
A
DSS  
GS  
20  
(b)  
(b)  
(a)  
Continuous drain current V =10V; T =25°C  
I
4.6  
3.7  
3.7  
GS  
GS  
GS  
A
A
D
V
V
=10V; T =70°C  
=10V; T =25°C  
A
(c)  
Pulsed drain current  
I
I
I
17  
2.6  
17  
A
A
A
DM  
S
(b)  
Continuous source current (body diode)  
(c)  
Pulsed source current (body diode)  
SM  
(a)  
Power dissipation at T =25°C  
A
Linear derating factor  
P
1.1  
8.8  
W
mW/°C  
D
(b)  
Power dissipation at T =25°C  
A
Linear derating factor  
P
1.7  
13.6  
W
mW/°C  
D
Operating and storage temperature range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
113  
UNIT  
°C/W  
°C/W  
(a)  
Junction to ambient  
R
R
θJA  
θJA  
(b)  
Junction to ambient  
73  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.  
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to  
Transient Thermal Impedance graph.  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
2
ZXMN3A03E6  
CHARACTERISTICS  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
3
ZXMN3A03E6  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)  
PARAMETER  
SYMBOL  
MIN.  
TYP. MAX. UNIT CONDITIONS.  
STATIC  
Drain-source breakdown voltage  
Zero gate voltage drain current  
Gate-body leakage  
V
30  
V
A  
nA  
V
I =250A, V =0V  
D GS  
(BR)DSS  
I
I
0.5  
V
=30V, V =0V  
GS  
DSS  
DS  
GS  
100  
V
=Ϯ20V, V =0V  
DS  
GSS  
Gate-source threshold voltage  
Static drain-source on-state resistance  
V
R
1
I =250A, V = V  
DS GS  
D
GS(th)  
DS(on)  
(1)  
0.050  
0.065  
V
V
=10V, I =7.8A  
D
GS  
GS  
=4.5V, I =6.8A  
D
(1)(3)  
Forward transconductance  
g
10  
S
V
=10V,I =7.8A  
D
fs  
DS  
(3)  
DYNAMIC  
Input capacitance  
C
C
C
600  
104  
58.5  
pF  
pF  
pF  
iss  
V
=25 V, V =0V,  
DS  
GS  
Output capacitance  
oss  
rss  
f=1MHz  
Reverse transfer capacitance  
(2) (3)  
SWITCHING  
Turn-on delay time  
Rise time  
t
t
t
t
2.9  
6.4  
ns  
ns  
ns  
ns  
nC  
d(on)  
r
V
=15V, I =3.5A  
D
DD  
G
R =6.0, V =10V  
Turn-off delay time  
Fall time  
16.0  
11.2  
6.9  
GS  
d(off)  
f
Gate charge  
Q
V
=15V,V =5V,  
DS GS  
g
ID=3.5A  
Total gate charge  
Q
Q
Q
12.6  
2.0  
nC  
nC  
nC  
g
V
=15V,V =10V,  
GS  
DS  
Gate-source charge  
Gate-drain charge  
SOURCE-DRAIN DIODE  
gs  
gd  
ID=3.5A  
2.0  
(1)  
Diode forward voltage  
V
0.85  
0.95  
V
T =25°C, I =3.2A,  
GS  
SD  
J
S
V
=0V  
(3)  
Reverse recovery time  
t
18.8  
14.1  
ns  
T =25°C, I =3.5A,  
J F  
di/dt= 100A/µs  
rr  
(3)  
Reverse recovery charge  
Q
nC  
rr  
NOTES:  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
4
ZXMN3A03E6  
TYPICAL CHARACTERISTICS  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
5
ZXMN3A03E6  
TYPICAL CHARACTERISTICS  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
6
ZXMN3A03E6  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES.  
PACKAGE DIMENSIONS  
Millimeters  
Inches  
Min  
Millimeters  
Inches  
Min  
DIM  
DIM  
Min  
0.90  
0.00  
0.90  
0.35  
0.09  
2.80  
Max  
Max  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
Min  
2.60  
1.50  
0.10  
Max  
3.00  
1.75  
0.60  
Max  
0.118  
0.069  
0.002  
A
A1  
A2  
b
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
0.35  
0
E
E1  
L
0.102  
0.059  
0.004  
0.035  
0.014  
0.0035  
0.110  
e
0.95 REF  
1.90 REF  
0° 10°  
0.037 REF  
0.074 REF  
0° 10°  
C
e1  
L
D
© Zetex Semiconductors plc 2005  
Europe  
Americas  
Asia Pacific  
Zetex (Asia) Ltd  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 3 - OCTOBER 2005  
SEMICONDUCTORS  
7
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