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UZXMD63C03XTC

型号:

UZXMD63C03XTC

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

12 页

PDF大小:

373 K

ZXMD63C03X  
30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
N-CHANNEL: V(BR)DSS=30V; RDS(ON)=0.135 ; ID=2.3A  
P-CHANNEL:  
V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilizes a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
MSOP8  
FEATURES  
Low on-resistance  
N-channel  
P-channel  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC converters  
Power management functions  
Disconnect switches  
Motor control  
Pin-out  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH  
(mm)  
QUANTITY  
PER REEL  
ZXMD63C03XTA  
ZXMD63C03XTC  
7
12 embossed  
12 embossed  
1,000  
4,000  
13  
DEVICE MARKING  
ZXM63C03  
Top view  
ISSUE 2 - SEPTEMBER 2007  
1
ZXMD63C03X  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
N-CHANNEL P-CHANNEL UNIT  
Drain-Source Voltage  
V
V
30  
-30  
V
V
DSS  
GS  
Gate- Source Voltage  
Ϯ20  
Continuous Drain Current  
(V =4.5V; T =25°C)(b)(d)  
I
2.3  
1.8  
-2.0  
-1.6  
A
A
GS  
A
D
(V =4.5V; T =70°C)(b)(d)  
GS  
A
Pulsed Drain Current (c)(d)  
I
I
I
14  
1.5  
14  
-9.6  
-1.4  
-9.6  
A
A
A
DM  
S
Continuous Source Current (Body Diode)(b)(d)  
Pulsed Source Current (Body Diode)(c)(d)  
SM  
Power Dissipation at T =25°C (a)(d)  
A
P
P
P
0.87  
6.9  
W
D
D
D
Linear Derating Factor  
mW/°C  
Power Dissipation at T =25°C (a)(e)  
A
Linear Derating Factor  
1.04  
8.3  
W
mW/°C  
Power Dissipation at T =25°C (b)(d)  
A
Linear Derating Factor  
1.25  
10  
W
mW/°C  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
143  
UNIT  
Junction to Ambient (a)(d)  
Junction to Ambient (b)(d)  
Junction to Ambient (a)(e)  
NOTES:  
R
R
R
°C/W  
°C/W  
°C/W  
θJA  
θJA  
θJA  
100  
120  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.  
(d) For device with one active die.  
(e) For device with two active die running at equal power.  
ISSUE 2 - SEPTEMBER 2007  
2
ZXMD63C03X  
N-CHANNEL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2007  
3
ZXMD63C03X  
P-CHANNEL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2007  
4
ZXMD63C03X  
N-CHANNEL  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V
I
30  
V
I =250μA, V =0V  
(BR)DSS  
D
GS  
1
V
=30V, V =0V  
GS  
μA  
DSS  
GSS  
DS  
GS  
I
100 nA  
V
V
=Ϯ 20V, V =0V  
DS  
Gate-Source Threshold Voltage  
V
1.0  
1.9  
I =250μA, V = V  
GS(th)  
DS(on)  
DS  
GS  
D
Static Drain-Source On-State Resistance (1) R  
0.135  
0.200  
V
V
=10V, I =1.7A  
D
Ω
Ω
GS  
GS  
=4.5V, I =0.85A  
D
Forward Transconductance (3)  
DYNAMIC (3)  
g
S
V
=10V,I =0.85A  
D
fs  
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
C
C
C
290  
70  
pF  
pF  
pF  
iss  
V
=25 V, V =0V,  
DS  
GS  
f=1MHz  
oss  
rss  
20  
t
t
t
t
2.5  
4.1  
9.6  
4.4  
ns  
ns  
ns  
ns  
nC  
d(on)  
V
=15V, I =1.7A  
D
r
DD  
G
R =6.1Ω, R =8.7Ω  
(Refer to test circuit)  
D
Turn-Off Delay Time  
Fall Time  
d(off)  
f
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Q
Q
Q
8
g
V
=24V,V =10V,  
GS  
DS  
1.2 nC  
ID=1.7A  
gs  
gd  
(Refer to test circuit)  
2
nC  
V
V
0.95  
T =25°C, I =1.7A,  
j S  
SD  
V
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge(3)  
NOTES:  
t
16.9  
9.5  
ns  
T =25°C, I =1.7A,  
j F  
di/dt= 100A/μs  
rr  
Q
nC  
rr  
(1) Measured under pulsed conditions. Width=300μs. Duty cycle Յ2%.  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 2 - SEPTEMBER 2007  
5
ZXMD63C03X  
N-CHANNEL TYPICAL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2007  
6
ZXMD63C03X  
N-CHANNEL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2007  
7
ZXMD63C03X  
P-CHANNEL  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
MIN.  
TYP. MAX. UNIT  
CONDITIONS  
STATIC  
Drain-Source Breakdown Voltage  
V
-30  
V
I =-250μA, V =0V  
(BR)DSS  
D
GS  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
I
-1  
V
=-30V, V =0V  
GS  
μA  
nA  
V
DSS  
DS  
GS  
I
V
=Ϯ20V, V =0V  
Ϯ100  
GSS  
DS  
Gate-Source Threshold Voltage  
V
-1.0  
I =-250μA, V =V  
GS(th)  
DS  
GS  
D
Static Drain-Source On-State  
Resistance (1)  
R
0.185  
0.27  
V
V
=-10V, I =-1.2A  
D
Ω
Ω
DS(on)  
GS  
GS  
=-4.5V, I =-0.6A  
D
Forward Transconductance (3)  
DYNAMIC (3)  
g
0.92  
S
V
=-10V,I =-0.6A  
D
fs  
DS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
C
C
C
270  
80  
pF  
pF  
pF  
iss  
V
=-25 V, V =0V,  
DS  
GS  
oss  
rss  
f=1MHz  
30  
t
t
t
t
2.6  
4.8  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
d(on)  
r
V
=-15V, I =-1.2A  
D
DD  
R =6.2Ω, R =6.2Ω  
Turn-Off Delay Time  
Fall Time  
13.1  
9.3  
G
D
d(off)  
f
(Refer to test circuit)  
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Q
Q
Q
7
1.2  
2
g
V
=-24V,V =-10V,  
GS  
DS  
gs  
gd  
ID=-1.2A  
(Refer to test circuit)  
V
-0.95  
V
T =25°C, I =-1.2A,  
j S  
V
SD  
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge(3)  
t
21.4  
15.7  
ns  
T =25°C, I =-1.2A,  
j F  
di/dt= 100A/μs  
rr  
Q
nC  
rr  
NOTES:  
(1) Measured under pulsed conditions. Width=300μs. Duty cycle Յ2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 2 - SEPTEMBER 2007  
8
ZXMD63C03X  
P-CHANNEL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2007  
9
ZXMD63C03X  
P-CHANNEL TYPICAL CHARACTERISTICS  
A
ISSUE 2 - SEPTEMBER 2007  
10  
ZXMD63C03X  
Definitions  
Product change  
Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service.  
Customers are solely responsible for obtaining the latest relevant information before placing orders.  
Applications disclaimer  
The circuits in thisdesign/application note are offered as design ideas. It is the responsibility ofthe user toensure thatthe circuit is fitforthe user's  
application and meets with the user's requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with  
respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or  
otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence),  
breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use  
of these circuit applications, under any circumstances.  
Life support  
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body  
or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions  
for use provided in the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Reproduction  
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in  
writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating  
to the products or services concerned.  
Terms and Conditions  
All products are sold subjects to Zetex' terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the  
terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  
For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  
Quality of product  
Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  
To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally  
authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork  
Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales  
channels.  
ESD (Electrostatic discharge)  
Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The  
possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage  
can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of  
being affected should be replaced.  
Green compliance  
Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory  
requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of  
hazardous substances and/or emissions.  
All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and  
ELV directives.  
Product status key:  
"Preview"Future device intended for production at some point. Samples may be available  
"Active"Product status recommended for new designs  
"Last time buy (LTB)"Device will be discontinued and last time buy period and delivery is in effect  
"Not recommended for new designs"Device is still in production to support existing designs and production  
"Obsolete"Production has been discontinued  
Datasheet status key:  
"Draft version"This term denotes a very early datasheet version and contains highly provisional  
information, which may change in any manner without notice.  
"Provisional version"This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to  
the test conditions and specifications may occur, at any time and without notice.  
"Issue"This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and  
without notice.  
ISSUE 2 - SEPTEMBER 2007  
11  
ZXMD63C03X  
PAD LAYOUT DETAILS  
PACKAGE DIMENSIONS  
c
e
1.02  
0.040  
E1  
E
4.8  
0.189  
R1  
D
mm  
inches  
L
R
A
A2  
0.41  
0.65  
0.023  
0.016  
A1  
b
DIM  
Millimeters  
Inches  
Max.  
Min.  
-
Max.  
1.10  
Min.  
-
A
0.0433  
0.006  
A1  
A2  
b
0.05  
0.75  
0.25  
0.13  
2.90  
0.15  
0.95  
0.40  
0.23  
3.10  
0.002  
0.0295  
0.010  
0.005  
0.114  
0.0374  
0.0157  
0.009  
c
D
0.122  
E
4.90 BSC  
0.193 BSC  
E1  
e
2.90  
3.10  
0.114  
0.122  
0.65 BSC  
0.025 BSC  
L
0.40  
0.07  
0.07  
0.70  
0.0157  
0.0027  
0.0027  
0.0192  
R
-
-
-
-
R1  
© Zetex Semiconductors plc 2007  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermannpark  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
ISSUE 2 - SEPTEMBER 2007  
12  
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