请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

UZXM64P035GTC

型号：

UZXM64P035GTC

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

110 K

下载PDF手册
ZXM64P035G  
35V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V
= -35V: R  
= 0.075 : I = -5.3A  
DS(on) D  
(BR)DSS  
DESCRIPTION  
This new generation of high cell density planar MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching speed. This  
makes them ideal for high efficiency, low voltage, power management applications.  
FEATURES  
· Low on-resistance  
· Fast switching speed  
· Low threshold  
· Low gate drive  
· SOT223 package  
APPLICATIONS  
· 50W Class D Audio Output Stage  
· Motor Control  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXM64P035GTA  
ZXM64P035GTC  
7”  
12mm  
12mm  
1000 units  
4000 units  
13”  
DEVICE MARKING  
· ZXM6  
Top View  
4P035  
ISSUE 1 - J UNE 2004  
1
ZXM64P035G  
ABSOLUTE MAXIMUM RATING  
PARAMETER  
SYMBOL  
LIMIT  
-35  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
A
V
DSS  
Ϯ20  
V
GS  
-5.3  
-4.3  
-3.8  
Continuous Drain Current (V  
(V  
= -10V; T =25°C)(b)  
I
GS  
GS  
A
D
= -10V; T =70°C)(b)  
A
(V  
= -10V; T =25°C)(a)  
A
GS  
Pulsed Drain Current (c)  
-19  
-2.3  
-19  
A
A
A
I
DM  
Continuous Source Current (Body Diode) (b)  
Pulsed Source Current (Body Diode)(c)  
I
S
I
SM  
2.0  
16  
W
mW/°C  
Power Dissipation at T =25°C (a)  
A
P
D
Linear Derating Factor  
3.9  
31  
W
mW/°C  
Power Dissipation at T =25°C (b)  
A
P
D
Linear Derating Factor  
Operating and Storage Temperature Range  
-55 to +150  
°C  
T :T  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
62.5  
32  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
NOTES  
R
θJA  
R
θJA  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр10 secs.  
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.  
ISSUE 1 - J UNE 2004  
2
ZXM64P035G  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
-35  
V
V
I
I
=-250µA, V  
=0V  
(BR)DSS  
D
GS  
=-35V, V =0V  
GS  
-1  
␮A  
V
DSS  
GSS  
DS  
Ϯ100 nA  
I
V
=Ϯ20V, V  
=0V  
GS  
DS  
Gate-Source Threshold Voltage  
-1.0  
2.3  
V
V
R
I =-250␮A, V  
= V  
GS(th)  
DS(on)  
DS  
GS  
D
Static Drain-Source On-State Resistance  
(1)  
0.075  
0.105  
⍀
⍀
V
V
=-10V, I =-2.4A  
D
GS  
GS  
=-4.5V, I =-1.2A  
D
Forward Transconductance (1)(3)  
DYNAMIC (3)  
S
g
V
=-10V,I =-1.2A  
D
fs  
DS  
Input Capacitance  
825  
250  
80  
pF  
pF  
pF  
C
C
C
iss  
V
=-25V, V  
=0V,  
DS  
GS  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
f=1MHz  
oss  
rss  
Turn-On Delay Time  
Rise Time  
4.4  
6.2  
40  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
t
d(on)  
t
t
t
r
V
R
=-15V, I =-2.4A  
D
DD  
G
=6.0⍀, V  
=-10V  
GS  
Turn-Off Delay Time  
Fall Time  
d(off)  
f
29.2  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
46  
9
Q
Q
Q
g
V
=-24V,V  
=-10V,  
GS  
DS  
gs  
gd  
ID=-2.4A  
11.5  
-0.95  
V
V
T =25ЊC, I =-2.4A,  
SD  
J
S
V
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge (3)  
30.2  
27.8  
ns  
t
T =25ЊC, I =-2.4A,  
J F  
rr  
di/dt= 100A/␮s  
nC  
Q
rr  
NOTES  
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - J UNE 2004  
3
ZXM64P035G  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
4.6  
2.0 min  
(3x)  
2.3  
1.5 min  
(3x)  
6.8  
2.0 min  
3.8 min  
DIM  
Millimetres  
Inches  
Min  
Min  
6.3  
3.3  
-
Max  
6.7  
Max  
0.264  
0.146  
0.067  
0.031  
0.122  
0.13  
A
B
C
D
E
0.248  
0.130  
-
3.7  
1.7  
0.6  
2.9  
0.24  
0.8  
0.024  
0.114  
0.009  
3.1  
F
0.32  
G
H
K
L
NOM 4.6  
NOM 0.181  
0.033 0.041  
0.0008 0.004  
0.264 0.287  
0.85  
0.02  
6.7  
1.05  
0.10  
7.3  
M
NOM 2.3  
NOM 0.0905  
© Zetex plc 2001  
Zetex plc  
Fields New Road  
Chadderton  
Oldham, OL9 8NP  
United Kingdom  
Zetex GmbH  
Streitfeldstraße 19  
D-81673 München  
Zetex Inc  
700 Veterans Memorial Hwy  
Hauppauge, NY11788  
Zetex (Asia) Ltd  
3701-04 Metroplaza, Tower 1  
Hing Fong Road  
Kwai Fong  
Hong Kong  
Germany  
USA  
Telephone (44) 161 622 4422  
Fax: (44) 161 622 4420  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
Telephone: (631) 360 2222  
Fax: (631) 360 8222  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 1 - J UNE 2004  
4
厂商 型号 描述 页数 下载

DIODES

 		UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T2E6TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.165171s