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UZXLD1100H6TC

型号：

UZXLD1100H6TC

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

16 页

PDF大小：

230 K

下载PDF手册
ZXLD1100  
ADJ USTABLE LED DRIVER WITH INTERNAL SWITCH AND OPEN  
CIRCUIT PROTECTION IN SC70-6  
DESCRIPTION  
Output current can be adjusted by applying a PWM  
control signal to the 'Enable' pin. Depending upon the  
control frequency, this will provide either a continuous  
o r a ' ch o p p e d ' o u tp u t cu rre n t. Th e PWM filte r  
com ponents are contained within the chip.  
The ZXLD1100 is a PFM inductive boost converter  
designed for driving 2, 3 or 4 series connected white  
LEDs from a Li-Ion cell and up to 8 LEDs from a 5V  
supply. The device operates from an input supply of  
between 2.5V and 5.5V and provides an adjustable  
output current of up to 50m A.  
The ZXLD1100 contains an internal avalanche diode to  
protect the output switch. This allows the device to  
operate indefinitely if the load is open circuit. Input  
supply current during this condition is less than 1m A.  
The ZXLD1100 includes the output switch and peak  
cu rre n t s e n s e re s is to r, a n d ca n o p e ra te w ith  
m axim um output voltage of 28V.  
a
The device is assem bled in a low profile SC70-6 pin  
package with industry standard pinout.  
Quiescent current is typically 60␮A and a shutdown  
function is provided to reduce this current to less than  
500nA in the 'off' state.  
APPLICATIONS  
ADVANCED FEATURES  
• Internal 30V NDMOS switch, current sense and  
• Mobile phones  
• Digital cam eras  
• PDAs  
open circuit protection  
• True Analog Dim m ing via PWM  
FEATURES  
• Low profile SC70 6 pin package  
• Internal PWM filter for flicker free output  
• High efficiency (80% typ)  
• Wide input voltage range: 2.5V to 5.5V  
• Up to 50m A output current  
• LCD m odules  
• Portable internet appliances  
• Palm top com puters  
• Low quiescent current: (60␮A typ)  
• 500nA m axim um shutdown current  
• Up to 1MHz switching frequency  
• Low external com ponent count  
• Inherently m atched LED currents  
TYPICAL APPLICATION CIRCUIT  
PIN CONNECTIONS  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
1
ZXLD1100  
ORDERING INFORMATION  
DEVICE  
DEVICE DESCRIPTION  
TEMPERATURE RANGE  
PART MARK  
TAPING  
OPTIONS  
ZXLD1100H6  
Boost convertor in SC70-6  
-40 to +85°C  
110  
TA, TC  
ZXLD1100H6TA = 7” reel of 3,000 devices  
ZXLD1100H6TC = 13” reel of 10,000 devices  
ABSOLUTE MAXIMUM RATINGS (Voltages to GND unless otherwise stated)  
PARAMETER  
S YMBOL  
LIMIT  
7
UNIT  
V
In p u t vo lta g e  
(V )  
IN  
LX o u tp u t vo lta g e  
S w itch o u tp u t cu rre n t  
Po w e r d is s ip a tio n  
Op e ra tin g te m p e ra tu re  
S to ra g e te m p e ra tu re  
J u n ctio n te m p e ra tu re  
(V  
)
30  
V
LX  
(I  
)
500  
m A  
m W  
°C  
LX  
(PD)  
300  
(T  
(T  
(T  
)
)
-40 to 85  
-55 to 150  
125  
OP  
S T  
°C  
)
°C  
j MAX  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
2
ZXLD1100  
ELECTRICAL CHARACTERISTICS (at VIN = 3V, Tam b = 25°C unless otherwise stated(1)  
)
S YMBOL PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
V
In p u t vo lta g e  
S u p p ly cu rre n t  
Qu ie s ce n t  
2.5  
5.5  
V
IN  
I
IN  
V
= V , I = 0,  
60  
100  
␮A  
EN  
IN LX  
Ou tp u t n o t s w itch in g  
V = 0V  
EN  
S h u td o w n  
500  
109.5  
100  
1
nA  
m V  
nA  
V
FB p in co n tro l vo lta g e  
FB p in in p u t cu rre n t  
Op e ra tin g fre q u e n cy  
90.5  
350  
FB  
I
FB  
LX  
f
L=10␮H, V  
=10V,  
=10V,  
0.35  
500  
MHz  
OUT  
I
=20m A  
OUT  
T
T
LX o u tp u t 'OFF' tim e  
ns  
µs  
OFF  
ON  
(2)  
LX o u tp u t 'ON' tim e  
5
I
S w itch p e a k cu rre n t lim it  
L=10␮H, V  
=20m A  
320  
1.5  
m A  
LXp k  
OUT  
I
OUT  
R
S w itch 'On ' re s is ta n ce  
S w itch le a ka g e cu rre n t  
Co n tro lle r o u tp u t vo lta g e  
⍀
µA  
V
LX  
I
V
=20V  
1
LX(le a k)  
LX  
V
No rm a l o p e ra tio n  
VS ENS E p in  
28  
OUT  
o p e n -circu it o r  
g ro u n d e d  
V
Co n tro lle r o u tp u t vo lta g e w ith o u tp u t  
o p e n circu it  
VS ENS E co n n e cte d to  
Vo u t  
25  
30  
V
OUT(MAX)  
(3)  
V
V
EN p in Hig h le ve l In p u t vo lta g e  
EN p in Lo w le ve l In p u t vo lta g e  
EN p in Lo w le ve l in p u t cu rre n t  
EN p in Hig h le ve l in p u t cu rre n t  
De vice a ctive  
1.5  
V
V
V
ENH  
ENL  
ENL  
ENH  
IN  
De vice in s h u td o w n  
0.4  
-100  
1
I
I
V
V
V
=0V  
nA  
␮A  
µs  
EN  
EN  
EN  
=V  
IN  
(4)  
T
EN p in tu rn o ff d e la y  
s w itch e d fro m  
120  
EN(h o ld )  
h ig h to lo w  
PWM d u ty cycle ra n g e a t ‘EN’ in p u t fo r  
filte re d PWM co n tro l  
10kHz < f < 100kHz,  
20  
100  
%
∆T/T  
(5)  
V
=V  
ENH IN  
f
In te rn a l PWM lo w p a s s filte r cu t-o ff  
fre q u e n cy  
4
kHz  
dB  
LPF  
A
Filte r a tte n u a tio n  
f=30kHz  
52.5  
LPF  
NOTES:  
(1) Production testing of the device is perform ed at 25°C. Functional operation of the device over a -40°C to +85°C tem perature range is  
guaranteed by design, characterization and process control.  
(2) Nom inal 'on' tim e (T  
) is defined by the input voltage (V ), coil inductance (L) and peak current (I  
) according to the expression:  
ONnom  
IN  
LXpkdc  
T
= {I  
) x L/V } +200ns.  
ONnom  
LX(pkdc IN  
(3) When using the open circuit protection feature, the m axim um output voltage under norm al operation should be m aintained below the  
m inim um value specified, in order to prevent possible disturbance of the current control loop.  
(4) This is the tim e for which the device rem ains active after the EN pin has been asserted low. This delay is necessary to allow the output to be  
m aintained during dc PWM m ode operation.  
(5) The m inim um PWM signal frequency during this m ode of operation is to ensure that the device rem ains active during PWM control. This  
provides a continuous dc output current. For lower frequencies, the device will be gated 'on' and 'off' during PWM control.  
(6) The m axim um PWM signal frequency during this m ode of operation should be kept as low as possible to m inim ize errors due to the turn-off  
delay of the device (see Enable pin turn-off delay).  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
3
ZXLD1100  
PIN DESCRIPTION  
PIN NO.  
NAME  
LX  
DES CRIPTION  
1
2
3
Ou tp u t o f NDMOS s w itch  
Gro u n d (0V)  
GND  
FB  
Fe e d b a ck p in fo r cu rre n t co n tro l lo o p (co n n e ct re s is to r R1  
fro m th is p in to GND fo r o u tp u t cu rre n t I=100m V/ R1)  
4
EN  
En a b le in p u t (a ctive h ig h to tu rn o n d e vice )  
Als o u s e d to a d ju s t o u tp u t cu rre n t b y PWM s ig n a l.  
Co n n e ct to V fo r p e rm a n e n t o p e ra tio n .  
in  
5
6
VS ENS E  
Ou tp u t vo lta g e s e n s e (u s e d fo r o p e n circu it p ro te ctio n ).  
Co n n e ct to GND if n o t re q u ire d .  
V
In p u t vo lta g e (2.5V to 5.5V). De co u p le w ith ca p a cito r clo s e  
to d e vice .  
IN  
BLOCK DIAGRAM  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
4
ZXLD1100  
DEVICE DESCRIPTION  
The device is a PFM flyback dc-dc boost converter,  
working in discontinuous m ode.  
Filtered PWM operation  
The input of an internal low pass filter is switched to  
VREF when the EN pin is high and switched to ground  
when the EN pin is low. The output of this filter drives  
the com parator within the control loop. A continuous  
high state on EN therefore provides a filtered voltage of  
value VREF to the com parator. However, by varying the  
duty cycle of the EN signal at a suitably high frequency  
(f>10kHz), the control loop will see a voltage, that has  
an average value equal to the duty cycle m ultiplied by  
With reference to the chip block diagram and typical  
application circuit, the operation of the device is as  
follows:  
Control loop  
When 'EN' is high, the control circuits becom e active  
and the low side of the coil (L1) is switched to ground  
via NDMOS transistor (MN). The current in L1 is  
allowed to build up to an internally defined level  
(nom inally 320m A) before MN is turned off. The energy  
stored in L1 is then transferred to the output capacitor  
(C2) via schottky diode (D1). When the voltage on C2  
has risen above the threshold voltage of the series  
connected LEDs, current will flow through external  
sense resistor R1. The voltage developed across R1 is  
sensed at pin 'FB' and com pared to a 100m V reference  
vo lta g e (VREF). A co m p a ra to r s e n s e s w h e n th e  
feedback voltage is above VREF and its output is used to  
control the 'off' tim e of the output switch. The control  
loop is self-oscillating, producing pulses of up to 5␮s  
m axim um duration (switch 'on'), at a frequency that  
varies in proportion to the LED current. The feedback  
loop m aintains a voltage of VREF at the FB pin and  
therefore defines a m axim um LED current equal to VREF  
divided by R1. The m inim um 'off' tim e of the output  
switch is fixed at 0.5␮s nom inal, to allow tim e for the  
coil's energy to be dissipated before the switch is  
turned on again. This m aintains stable and efficient  
operation in discontinuous m ode.  
VREF. This provides a m eans of adjusting the output  
current to a lower value. It also allows the device to be  
both turned on and adjusted with a single signal at the  
'EN' pin. The output during this m ode of operation will  
be a dc current equal to (VREF/R1) x duty cycle  
Gated PWM operation  
The internal circuitry of the ZXLD1100 is turned off  
when no signal is present on the 'EN' pin for m ore than  
120␮s (nom inal). A low frequency signal applied to the  
EN pin will therefore gate the device 'on' and 'off' at the  
gating frequency and the duty cycle of this signal can  
be varied to provide a 'chopped' output current equal  
to (VREF/R1) x duty cycle. For best accuracy, the gating  
frequency should be m ade as low as possible (e.g.  
below 1kHz), such that the turn off delay of the chip is  
only a sm all proportion of the gating period  
Further details of setting output current are given in the  
applications section under brightness control.  
Open circuit protection  
There is an internal avalanche diode between the  
VSENSE and FB pins of the device. This diode, together  
with the associated resistors provides open circuit  
protection when the VSENSE pin is connected to the  
o u tp u t vo lta g e . In th e e ve n t o f a n o p e n circu it  
condition, the output voltage will rise above the  
breakdown voltage of the internal diode, which will  
then conduct and override the control signal from the  
current sense resistor. This m aintains the output  
voltage at a level below the breakdown voltage of the  
output switch. Supply current in this condition will fall  
to a low value as the control loop provides only the bias  
current for the diode.  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
5
ZXLD1100  
TYPICAL CHARACTERISTICS  
(For typical application circuit at VIN=3V and TA=25 °C unless otherwise stated)  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
6
ZXLD1100  
TYPICAL OPERATING CHARACTERISTICS  
(For typical applications circuit at VIN=3V, L=10␮H Coilcraft DO1608C Series, 3 series LEDs,  
LED=15m A, TA=25 °C unless otherwise stated)  
I
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
7
ZXLD1100  
APPLICATIONS  
Program m ing the m axim um LED current  
Dim m ing Control using a DC voltage  
The m axim um LED current is program m ed by adding a For applications where the EN pin is not available a DC  
single resistor in series with the LED chain. The current voltage can be used to control dim m ing. By adding  
is determ ined by the resistor value and feedback resistors R2 and R3 and applying a DC voltage, the LED  
voltage and is given by:  
current can be adjusted from 100% to 0%. As the DC  
voltage increases, the voltage drop across R2 increases  
and the voltage drop across R1 decreases, thus  
reducing the current through the LEDs. Selection of R2  
and R3 should ensure that the current from the DC  
voltage is m uch less than the LED current and m uch  
larger than the feedback current. The com ponent  
values in the diagram below represent 0% to 100%  
dim m ing control from a 0 to 2V DC voltage.  
ILED = VFB/R1  
where VFB=100m V  
The table below gives recom m ended resistor values  
for required LED currents:  
LED Cu rre n t  
10m A  
R1 Va lu e  
10⍀  
15m A  
6.8⍀  
5⍀  
20m A  
30m A  
3.3⍀  
Dim m ing Control via a PWM signal on the EN pin  
A Pulse Width Modulated (PWM) signal can be applied  
to the EN pin in order to adjust the output current to a  
value below the m axim um LED current. Two m odes of  
adjustm ent are possible as described below.  
Dim m ing Control using a logic signal  
True Analog Dim m ing - Filtered ‘DC’ m ode  
For applications where the LED current needs to be  
adjusted in discrete steps a logic signal can be applied  
as shown in the diagram below. When Q1 os ‘off’, R1  
sets the m inim um LED current. When Q1 is ‘on’, R2 sets  
the LED current that will be added to the m inim um LED  
current. The form ula for selecting values for R1 and R2  
are given below:  
If a PWM signal of 10kHz or higher is applied to the EN  
pin, the device will rem ain active when the EN pin is  
low. However, the input to the internal low pass filter  
will be switched alternately from VREF to ground, with a  
duty cycle (D) corresponding to that of the PWM signal.  
This will present a filtered dc voltage equal to the duty  
cycle m ultiplied by VREF to the control loop and will  
produce a dc output current lower than the m axim um  
set value. This current is given by:  
IOUTdc = 0.1D/R1  
This m ode of adjustm ent m inim izes flicker in the light  
output and system noise.  
Pulsed Dim m ing - Gated Mode  
If a lower frequency of 1kHz or less is applied to the EN  
pin, the device will be gated ‘on’ and ‘off’ at a duty cycle  
(D) corresponding to that of the input signal. The  
average output current is then given by:  
MOSFET ‘off’  
IOUTavg » 0.1D/R1  
VFB  
ILED(MIN )  
This m ode m ay be preferred over dc current control if  
the purest white output is required. However, note the  
120␮s nom inal turn-off delay of the device, when using  
the device in this m ode.  
RLED  
MOSFET ‘on’  
VFB  
ILED(MAX )  
ILED(MIN )  
RLED  
where VFB = 100m V  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
8
ZXLD1100  
Open circuit protection  
The voltage sense pin (VSENSE) can be connected to the For m axim um stability over tem perature, capacitors  
output to provide open circuit protection for the device with X7R dielectric are recom m ended, as these have a  
and external circuits when driving series connected m uch sm aller tem perature coefficient than other types.  
LEDs, thus elim inating the need for an external Zener  
diode. Protection is provided by the internal avalanche  
diode (ZD), which lim its the m axim um output voltage  
to a value below the breakdown voltage of the output  
switch when the connection to the diodes is broken.  
A table of recom m ended m anufacturers is provided  
below:  
Ma n u fa ct u re r  
Mu ra ta  
We b s it e  
Capacitor selection  
w w w .m u ra ta .co m  
w w w .t-yu d e n .co m  
w w w .ke m e n t.co m  
w w w .a vxco rp .co m  
A ceram ic capacitor grounded close to the GND pin of  
the package is recom m ended at the output of the  
d e v ic e . S u r fa c e m o u n t t y p e s o ffe r t h e b e s t  
p e rfo rm a n ce d u e to th e ir lo w e r in d u cta n ce . A  
m inim um value of 0.22␮F is advised, although higher  
values will lower switching frequency and im prove  
efficiency especially at lower load currents. A higher  
value will also m inim ize ripple when using the device  
to provide an adjustable dc output current.  
Ta iyo Yu d e n  
Ke m e t  
AVX  
A good quality, low ESR capacitor should also be used  
for input decoupling, as the ESR of this capacitor is  
effectively in series with the source im pedance and  
lowers overall efficiency. This capacitor has to supply  
the relatively high peak current to the coil and sm ooth  
the current ripple on the input supply. A m inim um  
value of 1␮F is acceptable if the input source is close to  
the device, but higher values will im prove perform ance  
at lower input voltages, when the source im pedance is  
high. The input capacitor should be m ounted as close  
as possible to the IC  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
9
ZXLD1100  
Inductor selection  
The choice of inductor will depend on available board  
space as well as required perform ance. Sm all value  
inductors have the advantage of sm aller physical size  
and m ay offer lower series resistance and higher  
saturation current com pared to larger values. A  
disadvantage of lower inductor values is that they result  
in higher frequency switching, which in turn causes  
reduced efficiency due to switch losses. Higher inductor  
values can provide better perform ance at lower supply  
voltages. However, if the inductance is too high, the  
output power will be lim ited by the internal oscillator,  
which will prevent the coil current from reaching its  
peak value. This condition will arise whenever the ram p  
tim e (ILX(p e a k) x L/VIN) exceeds the nom inal 5␮s  
m axim um ‘on’ tim e lim it for the LX output.  
The graphs opposite show the ZXLD1100 perform ance  
for given inductor values and different m anufacturers.  
Recom m ended inductor values for the ZXLD1100 are  
in the range 6.8␮H to 22␮H. The inductor should be  
m ounted as close to the device as possible with low  
resistance connections to the LX and VIN pins.  
Suitable coils for use with the ZXLD1100 are shown in  
the table below:  
L
H)  
DCR  
( )  
I
S AT  
(A)  
Pa rt No .  
Ma n u fa ct u re r  
(
CMD4D11-100MC 10  
0.457 0.5  
S u m id a  
w w w .s u m id a .co m  
DO1608-103  
LQH31CN100  
10  
10  
0.16 1.1  
Co ilcra ft  
www.coilcraft.com  
1.3  
0.5  
0.23 Mu ra ta  
w w w .m u ra ta .co m  
LB2012Y100MR 10  
0.1  
Ta iyo Yu d e n  
w w w .t-yu d e n .co m  
Diode selection  
Layout considerations  
Th e re ctifie r d io d e (D1) s h o u ld b e  
a fa s t lo w  
PCB tracks should be kept as short as possible to  
m inim ize ground bounce, and the ground pin of the  
device should be soldered directly to the ground plane.  
It is particularly im portant to m ount the coil and the  
input/output capacitors close to the device to m inim ize  
p a ra s itic re s is ta n ce a n d in d u cta n ce , w h ich w ill  
degrade efficiency. The FB pin is a high im pedance  
input so PCB track lengths to this should also be kept as  
short as possible to reduce noise pickup. Excess  
capacitance from the FB pin to ground should be  
avoided.  
capacitance schottky diode with low reverse leakage at  
the working voltage. It should also have a peak current  
rating above the peak coil current and a continuous  
current rating higher than the m axim um output load  
current.  
The table below gives som e typical characteristics for  
diodes that can be used with the ZXLD1100:  
Dio d e  
V
@ 100m A (m V)  
I
(m A)  
Ic (m A)  
400  
I a t 30V ( A)  
R
Pa cka g e  
S OD323  
S OT23  
F
FS M  
ZHCS 400  
ZHCS 500  
300  
300  
1000  
1000  
15  
15  
500  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
10  
ZXLD1100  
REFERENCE DESIGNS  
3 LED Driver for Handset LCD Backlight  
Circuit Diagram  
Note: LED current is set to 15m A  
Bill of m aterials  
Re f  
U1  
D1  
L1  
Va lu e  
Pa cka g e  
S C70-6  
Pa rt Nu m b e r  
ZXLD1100H6  
ZHCS 400  
Ma n u fa ct u re r  
Ze te x  
No t e s  
LED Drive r IC  
400m A  
10␮H  
6.8⍀  
S OD323  
Ze te x  
400m A S ch o ttky Dio d e  
1m m He ig h t Pro file  
CMD4D11-100MC  
Ge n e ric  
S u m id a  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Nich ia  
R1  
0603  
0603  
0603  
0603  
1
R2  
100k⍀  
1␮F  
Ge n e ric  
C1  
Ge n e ric  
C2  
1␮F  
Ge n e ric  
LEDs  
NS CW215  
3p cs p e r b o a rd  
Note: R2 is optional. If EN is floating add R2 to shutdown the ZXLD1100 and LEDs. If EN pin can be driven low, R2 is not necessary.  
Perform ance Graphs  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
11  
ZXLD1100  
4 LED Driver for Handset LCD Backlight  
Circuit Diagram  
Note: LED current is set to 15m A  
Bill of m aterials  
Re f  
U1  
D1  
L1  
Va lu e  
Pa cka g e  
S C70-6  
Pa rt Nu m b e r  
ZXLD1100H6  
ZHCS 400  
Ma n u fa ct u re r  
Ze te x  
No t e s  
LED Drive r IC  
400m A  
10␮H  
6.8⍀  
S OD323  
Ze te x  
400m A S ch o ttky Dio d e  
1m m He ig h t Pro file  
CMD4D11-100MC  
Ge n e ric  
S u m id a  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Nich ia  
R1  
0603  
0603  
0603  
0603  
1
R2  
100k⍀  
1␮F  
Ge n e ric  
C1  
Ge n e ric  
C2  
1␮F  
Ge n e ric  
LEDs  
NS CW215  
4p cs p e r b o a rd  
Note: R2 is optional. If EN is floating add R2 to shutdown the ZXLD1100 and LEDs. If EN pin can be driven low, R2 is not necessary.  
Perform ance Graphs  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
12  
ZXLD1100  
5 LED Driver for Handset Main and Sub Display LCD Backlight  
Circuit Diagram  
Note: LED current is set to 15m A  
Bill of m aterials  
Re f  
U1  
D1  
L1  
Va lu e  
Pa cka g e  
S C70-6  
Pa rt Nu m b e r  
ZXLD1100H6  
ZHCS 400  
Ma n u fa ct u re r  
Ze te x  
No t e s  
LED Drive r IC  
400m A  
10␮H  
6.8⍀  
S OD323  
Ze te x  
400m A S ch o ttky Dio d e  
1m m He ig h t Pro file  
CMD4D11-100MC  
Ge n e ric  
S u m id a  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Nich ia  
R1  
0603  
0603  
0603  
0603  
1
R2  
100k⍀  
1␮F  
Ge n e ric  
C1  
Ge n e ric  
C2  
1␮F  
Ge n e ric  
LEDs  
NS CW215  
5p cs p e r b o a rd  
Note: R2 is optional. If EN is floating add R2 to shutdown the ZXLD1100 and LEDs. If EN pin can be driven low, R2 is not necessary.  
Perform ance Graphs  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
13  
ZXLD1100  
6 LED Driver for LCD Backlight  
Circuit Diagram  
Note: LED current is set to 15m A  
Bill of m aterials  
Re f  
U1  
D1  
L1  
Va lu e  
Pa cka g e  
S C70-6  
Pa rt Nu m b e r  
ZXLD1100H6  
ZHCS 400  
Ma n u fa ct u re r  
Ze te x  
No t e s  
LED Drive r IC  
400m A  
10␮H  
6.8⍀  
S OD323  
Ze te x  
400m A S ch o ttky Dio d e  
1m m He ig h t Pro file  
CMD4D11-100MC  
Ge n e ric  
S u m id a  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Ge n e ric  
Nich ia  
R1  
0603  
0603  
0603  
0603  
1
R2  
100k⍀  
1␮F  
Ge n e ric  
C1  
Ge n e ric  
C2  
1␮F  
Ge n e ric  
LEDs  
NS CW215  
6p cs p e r b o a rd  
Note: R2 is optional. If EN is floating add R2 to shutdown the ZXLD1100 and LEDs. If EN pin can be driven low, R2 is not necessary.  
Perform ance Graphs  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
14  
ZXLD1100  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
15  
ZXLD1100  
PACKAGE OUTLINE - SC70-6  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Min Max  
0.0315 0.0433  
0.0039  
0.0315 0.0394  
0.006 0.0118  
Millim eters  
Min Max  
2.10BSC  
1.25 1.35  
0.65 BSC  
1.30 BSC  
Inches  
Min Max  
DIM  
DIM  
Min  
0.80  
-
Max  
A
A1  
A2  
b
1.10  
0.10  
1.00  
0.30  
0.25  
E
E1  
e
0.0826 BSC  
0.0492 0.0531  
0.0255 BSC  
-
0.80  
0.15  
0.08  
e1  
L
0.0511 BSC  
C
0.0031 0.0098  
0.0787 BSC  
0.26  
0°  
0.46  
8°  
0.0102 0.0181  
D
2.00 BSC  
a°  
0°  
8°  
© Zetex plc 2003  
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This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to w w w .zetex.com  
ISSUE 4 - J ULY 2004  
S E M IC O N D U C T O R S  
SCZXLD1100DS2  
16  
厂商 型号 描述 页数 下载

DIODES

 		UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T2E6TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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