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UZXBM2001X10TA

型号：

UZXBM2001X10TA

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

10 页

PDF大小：

253 K

下载PDF手册
ZXBM2001  
ZXBM2002 ZXBM2003  
VARIABLE SPEED 2-PHASE FAN MOTOR CONTROLLER  
DESCRIPTION  
The ZXBM200x is a series of 2-phase, DC brushless m otor pre-drivers with PWM  
variable speed control suitable for fan and blower m otors.  
FEATURES  
· Built in lock detect protection, rotational speed sensing and autom atic recovery  
· Built in Hall am plifier allows direct connection to Hall elem ent  
· PWM Speed control via  
- External voltage  
- Therm istor input  
- External PWM source  
· Speed (FG) pulse output – ZXBM2003  
· Rotor lock output – ZXBM2002  
· Com bined Rotor Lock (RD) and Speed (FG) signal – ZXBM2001  
· Up to 18V input voltage (60V with external regulator)  
· MSOP10 package  
APPLICATIONS  
· Mainfram e and Personal Com puter Fans and Blowers  
· Instrum entation Fans  
· Central Heating Blowers  
· Autom otive clim ate control  
ORDERING INFORMATION  
DEVICE  
REEL S IZE  
7” (180m m )  
13” (330m m )  
TAPE WIDTH  
12m m  
QUANTITY PER REEL  
ZXBM200xX10TA  
ZXBM200xX10TC  
1,000  
4,000  
12m m  
Exam ple: ZXBM2001X10TA  
DEVICE MARKING  
ZXBM2001 or BM21  
ZXBM2002 or BM22  
ZXBM2003 or BM23  
ISSUE 4 - OCTOBER 2004  
1
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
Absolute m axim um ratings  
Pa ra m e t e r  
S u p p ly Vo lta g e  
S ym b o l  
Lim it s  
-0.6 to 20  
200  
Un it  
V
V
CCm a x  
CCm a x  
In p u t Cu rre n t  
I
m A  
m W  
ЊC  
Po w e r Dis s ip a tio n 25°C  
Op e ra tin g Te m p .  
S to ra g e Te m p .  
P
500  
Dm a x  
T
-40 to 85  
-55 to 150  
OPR  
S TG  
T
ЊC  
Pow er Dissipation  
1) Maxim um allowable Power Dissipation, PD,  
is shown plotted against Am bient Tem perature,  
TA, in the accom panying Power Derating Curve,  
indicating the Safe Operating Area for the device.  
2) Power consum ed by the device, PT, can be  
calculated from the equation:  
PT = PQ + PPh  
where PQ is power dissipated under quiescent  
current conditions, given by:  
P
Q = VCC x ICC  
where VCC is the application  
device Supply Voltage  
and  
ICC is the m axim um Supply  
Current given in the Electrical  
Characteristics  
and  
PPh is power generated due to either one of  
the phase outputs Ph1 or Ph2 being  
active, given by:  
PPh = IOL x VOL  
where  
and  
IOL is the application Ph1 and Ph2  
output currents  
VOL is the m axim um Low Level  
Output Voltage for the Ph1 and  
Ph2 outputs given in the Electrical  
Characteristics  
ISSUE 4 - OCTOBER 2004  
2
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
Electrical Characteristics (at T  
= 25°C & V = 12V)  
CC  
am b  
Pa ra m e t e r  
S u p p ly Vo lta g e  
S ym b o l  
Min  
Typ  
Ma x  
18  
Un it  
V
Co n d it io n s  
V
4.5  
CC  
1
S u p p ly Cu rre n t  
I
2.2  
3.25  
m A  
m V  
V
No Lo a d  
CC  
Ha ll Am p In p u t Vo lta g e  
Ha ll Am p Co m m o n Mo d e Vo lta g e  
Ha ll Am p In p u t Offs e t  
Ha ll Am p Bia s Cu rre n t  
PH1, PH2 Ou tp u t Hig h  
40  
d iff p -p  
V
0.5  
0.5V  
±7  
V
-1.5  
CM  
CC  
CC  
V
m V  
n A  
V
OFS  
V
-350  
-1.8  
BS  
V
V
-2.2  
V
I = 80m A  
OH  
OH  
CC  
CC  
PH1, PH2 Ou tp u t Off Le a ka g e  
Cu rre n t  
I
Ϯ10  
␮A  
OFF  
PH1, PH2 Ou tp u t Cu rre n t Hig h  
I
-80  
m A  
V
OH  
Lo ck/FG Ma xim u m Co lle cto r  
Vo lta g e  
V
V
CC  
OH  
Lo ck/FG S in k Cu rre n t  
I
5
m A  
V
OL  
Lo ck/FG Lo w Le ve l O/P Vo lta g e  
V
0.3  
0.5  
I
= 5m A  
= 1.5V  
= 1.5V  
OL  
OL  
C
C
Ch a rg e Cu rre n t  
I
-1.8  
1:7  
-2.8  
0.28  
1:10  
2.0  
␮A  
␮A  
V
V
LCK  
LCK  
LCKC  
LCKD  
in  
in  
Dis ch a rg e Cu rre n t  
I
0.35  
Lo ck co n d itio n On :Off ra tio  
C
C
C
C
Hig h Th re s h o ld Vo lta g e  
Lo w Th re s h o ld Vo lta g e  
V
V
V
LCK  
THH  
V
1.0  
LCK  
THL  
Ch a rg e Cu rre n t  
I
3.6  
50  
4.3  
5.0  
75  
␮A  
␮A  
V
V
= 1.5V  
= 1.5V  
PWM  
PWM  
PWMC  
PWMD  
in  
Dis ch a rg e Cu rre n t  
I
62  
in  
PWM Fre q u e n cy  
F
24  
34  
kHz  
kHz  
C
C
= 150p F  
= 100p F  
PWM  
PWM  
PWM  
C
C
Hig h Th re s h o ld Vo lta g e  
Lo w Th re s h o ld Vo lta g e  
V
2.0  
1.0  
V
V
V
V
PWM  
PWM  
THH  
V
THL  
S PD  
S PD Vo lta g e Co n tro l Ra n g e  
S PD Op e n Circu it Vo lta g e  
V
1
2
2
3
1.5  
Notes:  
1
Measured with pins H+, H-, C  
and C  
= 0V and all other signal pins open circuit.  
PWM  
LCK  
2
3
The 1V m inim um represents 100% PWM drive and 2V represents 0% PWM drive.  
This voltage is determ ined by an internal resistor network of 52.5k⍀ from the pin to Gnd and 19.5k⍀ from the pin to a 2V reference. Whilst both  
resistors track each other the absolute values are subject to a ±20% m anufacturing tolerance  
ISSUE 4 - OCTOBER 2004  
3
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
Block Diagram (ZXBM2001):  
Pin Assignm ents  
Top View  
Pin Functional Descriptions  
1. VCC - Applied voltage  
2. H+  
3. H-  
- Hall input  
- Hall input  
This is the device supply voltage. For 5V to 12V fans this  
can be supplied directly from the Fan Motor supply. For  
fans likely to run in excess of the 18V m axim um rating  
for the device this will be supplied from an external  
regulator such as a zener diode.  
The rotor position of the Fan Motor is detected by a Hall  
sensor whose output is applied to these pins. This  
sensor can be either a 4 pin ‘naked’ Hall device or a 3  
pin buffered switching type. For a 4 pin device the  
differential Hall output signal is connected to the H+  
and H- pins. For a 3 pin buffered Hall sensor the Hall  
device output is attached to the H+ pin whilst the H- pin  
has an external potential divider attached to hold the  
pin at half VCC. When H+ is high in relation to H- Ph2 is  
the active drive.  
ISSUE 4 - OCTOBER 2004  
4
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
On the ZXBM2001 the Lock/FG pin is designed to be a  
dual function pin to provide an indication of the Fans  
rotational speed together with an indication of when  
the Fan has failed rotating for whatever reason (Rotor  
Locked condition). Under correct operating conditions,  
and with the external pull-up in place, this pin will  
provide an output signal whose frequency will be twice  
that of the rotational frequency of the fan. Should the  
fa n its e lf s to p ro ta tin g fo r a n y re a s o n , i.e . a n  
obstruction in the fan blade or a seized bearing, then  
the device will enter a Rotor Locked condition. In this  
condition the Lock/FG pin will go high (regardless of  
the state of the Hall sensor) when the CLCK pin reaches  
the VTHH threshold and will rem ain high until the fan  
blades start rotating again.  
4. SPD  
- Speed control voltage input  
This pin provides control over the Fan Motor speed by  
varying the Pulse Width Modulated (PWM) drive ratio  
at the Ph1 and Ph2 outputs. This control signal can take  
the form of either a voltage input of nom inal range 2V  
to 1V, representing 0% to 100% drive respectively, or  
alternatively a therm istor can be attached to this pin to  
control the voltage. A third m ethod of speed control is  
available by the application of an externally derived  
PWM signal and this will be discussed under the CPWM  
pin.  
This pin has an internal potential divider between an  
internal 2.0V reference and Gnd (see Block Diagram )  
designed to hold the pin at approxim ately 1.5V. This  
will represent a drive of nom inally 50% PWM. For  
therm al speed control a 100k NTC therm istor is  
connected between the SPD and ground will provide a  
drive nom inally 70% at 25°C and 100% at 50°C. As the  
therm istor is connected in parallel with the internal  
On the ZXBM2002 variant this pin is Lock. During  
norm al operation the signal will be low and during a  
Locked Rotor condition the pin will go high when the  
CLCK pin reaches the VTHH threshold.  
resistor the non-linearity of an NTC therm istor is For the ZXBM2003 variant this pin is FG. This signal is a  
largely taken out. A linearity of typically ±2.5% is buffered and inverted output of the Hall signal and  
achievable.  
therefore provides an output signal whose frequency  
will be twice that of the rotational frequency of the fan.  
Lower values of therm istor can be used if needed and  
in this situation an external potential divider will be  
needed to set the speed range. This will take the form of  
a resistor from the SPD pint to Vcc and a resistor from  
the SPD pin to Gnd. Full details are given in the  
ZXBM200x series Application Note.  
7. CLCK - Locked Rotor tim ing capacitor  
When in a Locked Rotor condition as described above  
the Ph1 and Ph2 drive outputs go into a safe drive m ode  
to protect the external drive devices and the m otor  
windings. This condition consists of driving the m otor  
for a short period then waiting for a longer period  
before trying again. The frequency at which this takes  
place is determ ined by the size of the capacitor applied  
to this CLCK pin. For a 12V supply a value of 1.0uF will  
typically provide an ‘On’ (drive) period of 0.33s and an  
‘Off’ (wait) period of 4.0s, giving an On:Off ratio of 1:12.  
If speed control is not required this pin is can be left  
open circuit for 50% drive or tied to ground by a 10k⍀  
resistor to provide 100% drive.  
If required this pin can also be used as an enable pin.  
The application of a voltage of 2.0V to VCC will to force  
the PWM drive fully off, in effect disabling the drive.  
5. GND - Ground  
The CLCK tim ing periods are determ ined by the  
following equations:  
This is the device supply ground return pin and will  
generally be the m ost negative supply pin to the fan.  
V
THH × CLCK  
(VTHH − VTHL) × CLCK  
T
lock  
=
T
off  
=
ILCKC  
ILCKD  
(VTHH − VTHL) × CLCK  
6. LOCK/ FG  
- Locked Rotor error output /  
Ton =  
ILCKC  
Frequency Generator (speed) output  
Where VTHH and VTHL are the CLCK pin threshold  
voltages and ILCKC and ILCKD are the charge and  
discharge currents.  
This pin is an open collector output and so will require  
an external pull up resistor for correct operation.  
ISSUE 4 - OCTOBER 2004  
5
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
Locked Rotor tim ing capacitor (CONT).  
C
C
T
PWM  
=
+
I
PWMC PWMD  
I
The CPWM pin can also be used as in input for an  
externally derived PWM signal to control the m otor  
speed. The signal should have a VOL <1V and a VOH  
>2V. A standard TTL or CMOS digital signal is ideal.  
When driving from an external PWM source no  
capacitor should be attached to the CPWM pin and the  
SPD pin should be left open circuit.  
As these threshold voltages are nom inally set to  
V
THH=2V and VTHL=1V the equations can be sim plified  
as follows:  
2 × CLCK  
C
LCK  
C
LCK  
T
lock  
=
T
on  
=
T
off  
=
ILCKC  
ILCKC  
ILCKD  
8. CPWM  
- Sets PWM frequency  
- external PWM input  
9. PH2  
- External transistor driver  
10. PH1 - External transistor driver  
This pin has an external capacitor attached to set the  
PWM fre q u e n cy fo r th e Ph a s e d rive o u tp u ts . A These are the Phase drive outputs and are open  
ca p a cito r va lu e o f 0.15n F w ill p ro vid e  
frequency of typically 24kHz.  
a
PWM darlington em itter followers designed to provide up to  
80m A of drive to external transistors as shown in the  
Application circuits following. The external transistors  
The CLCK tim ing period (Tpwm ) is determ ined by the  
in turn drive the fan m otor windings.  
following equation:  
(VTHH - VTHL) × C (VTHH − VTHL) × C  
T
lock  
=
+
IPWMC  
IPWMD  
Where TPWM is in ␮s  
C = CPWM +15 in pF  
IPWM & IPWMD are in ␮A  
Where VTHH and VTHL are the CPWM pin threshold  
voltages and IPWMC and IPWMD are the charge and  
discharge currents.  
As these threshold voltages are nom inally set to  
VTHH=2V and VTHL=1V the equations can be sim plified  
as follows:  
ISSUE 4 - OCTOBER 2004  
6
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
Lock & FG Tim ing Waveform :  
Lock Tim ing Exam ple:  
Using the equation previously described and to be  
found under the CLCK pin description:  
2 × CLCK  
C
LCK  
C
LCK  
T
lock  
=
T
on  
=
T
off  
=
ILCKC  
ILCKC  
ILCKD  
Using a value of CLCK = 1.0uF together with the values  
o f ILCKC a n d ILCKD to b e fo u n d in th e Ele ctrica l  
Characteristics we can derive the following tim ings for  
operation at 12V and 25°C.  
2 × 1.0␮F  
2.8␮A  
1.0␮F  
T
lock  
=
= 0.714s  
2 × 1.0␮F  
T
off  
=
= 3.6s  
0.28␮A  
Figure 2  
T
on  
=
= 0.36s  
TYPICAL APPLICATION (ZXBM2001) using MOSFET power transistors  
2.8␮A  
Figure 1  
TYPICAL APPLICATION (ZXBM2001) using Bipolar power transistors  
Graph 1  
ISSUE 4 - OCTOBER 2004  
7
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
APPLICATION INFORMATION  
Also illustrated in the two Applications circuits above  
are the m ethods of connection for both a ‘naked’ Hall  
device, as seen in the bipolar circuit in Figure 1, and a  
buffered Hall device, as in the MOSFET circuit in Figure  
2. In this latter circuit R5 & R6 bias the H- pin at a voltage  
equivalent to half the swing of the Hall device. R7 will  
be needed if the buffered Hall device does not have its  
own internal pull-up.  
This section gives a brief insight into applications using  
the ZXBM200x series. More com plete data is available  
in the ZXBM200x Series Applications Note, visit  
www.zetex.com /zxbm or contact your nearest Zetex  
office for full details.  
The ZXBM200x series of 2-phase DC brushless m otor  
pre-drivers are capable of driving both Bipolar or  
MOSFET power transistors.  
Graph 1 below, illustrates the PWM drive waveform  
taken from and application using the MOSFET circuit in  
Figure 2. This shows the waveform s to be found at the  
Ph1 output and at the drain/Winding node.  
For sm aller fans and blowers it is likely that bipolar  
power transistors would be used as shown in the  
following Applications circuit.  
In Figure 1, R1 & R2 have their value selected to provide  
suitable base current in keeping with the winding  
current and gain of the power transistors Q1 & Q2. R3 &  
R4 have their value selected to provide efficient  
switch-off of Q1 & Q2. The Zener diodes ZD1 & ZD2  
provide active clam ping in conjunction with Q1 & Q2.  
It is also recom m ended that the supply de-coupling  
capacitor C3 is positioned as close as is practical to the  
ZXBM device pins.  
In the case of higher power fans and blowers it m ay be  
m ore applicable to use MOSFET devices to switch the  
windings as illustrated in the second applications  
circuit shown in Figure 2.  
In Figure 2, the Resistor ratio of R1 to R3 and R2 to R4  
provide the required Gate turn-on voltage whilst the  
absolute values will be chosen to provide sufficient  
gate switching currents.  
ISSUE 4 - OCTOBER 2004  
8
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
When driving fans with bipolar transistors, at higher  
voltages it m ay be necessary to provide extra noise  
protection by the addition of a diode from the driver  
collector to Gnd on each phase. This prevents negative  
vo lta g e e xcu rs io n s fro m th e w in d in g s a ffe ctin g  
operation. See Figure 3 right, showing the placem ent  
of these diodes. It should be noted that these are not  
required for the MOSFET solution in Figure 2 as the  
diodes are inherent in the MOSFET structure.  
Zetex provide a variety of suitable power transistors for  
using with the ZXBM200x series of 2-phase DC  
brushless m otor pre-drivers and suitable devices  
sufficient for a range of applications are given in the  
following table.  
Figure 3  
TYPICAL APPLICATION (ZXBM2001) illustrating addition of Clam p  
diodes.  
SUMMARY TABLE OF SUITABLE DEVICES  
Bip o la r Typ e s  
V
(V)  
I
(A)  
m in H @ I  
V m a x(m V)  
CE(s a t )  
Pa cka g e  
CEO  
C
FE  
C
@ I & I  
C
B
FZT1053A  
FZT851  
75  
60  
4.5  
300 @ 0.5A  
100 @ 2A  
100 @ 2A  
100 @ 1A  
300 @ 1A  
200 @ 1A, 10m A  
100 @ 1A, 10m A  
175 @ 1A, 100m A  
65 @ 0.5A, 50m A  
100 @ 1A, 10m A  
S OT223  
S OT223  
S OT223  
S OT223  
S OT23-6  
6
6
4
4
FZT853  
100  
150  
50  
FZT855  
ZXT13N50DE6  
MOS FET Typ e s  
BV  
(V)  
I
(A)  
I
(A)  
R m a x(m  
DS (o n )  
)
Pa cka g e  
DS S  
D
PEAK  
(Pu ls e d )  
25  
@ V  
GS  
2 3  
ZXMN3A04DN8  
30  
60  
7.6  
5
20 @ 10V  
45 @ 10V  
140 @ 10V  
140 @ 10V  
600 @ 10V  
S O8  
S O8  
2 3  
ZXMN6A09DN8  
17.6  
10  
1
ZXMN6A11Z  
60  
3.8  
3.8  
1.9  
S OT89  
S OT223  
S OT223  
ZXMN6A11G  
60  
10  
2 4  
ZXMN10A11G  
100  
5.9  
Notes:  
1
2
3
4
Contact your nearest Zetex office for further details and technical enquiries.  
Dual device  
Provisional inform ation  
Advanced inform ation  
ISSUE 4 - OCTOBER 2004  
9
S E M IC O N D U C T O R S  
ZXBM2001  
ZXBM2002 ZXBM2003  
PACKAGE OUTLINE  
PACKAGE DIMENSIONS  
MILLIMETERS  
DIM  
INCHES  
MIN.  
MAX.  
1.10  
0.15  
0.95  
MIN.  
MAX.  
0.43  
A
A1  
A2  
D
ᎏ
ᎏ
ᎏ
ᎏ
0.006  
0.037  
0.75  
0.0295  
3.00 BS C  
0.118 BS C  
E
4.90 BS C  
3.00 BS C  
0.1929 BS C  
0.118 BS C  
E1  
b
0.17  
0.27  
0.23  
0.0066 0.0106  
c
0.08  
0.003  
0.009  
e
0.50 BS C  
0.0196 BS C  
⍜
L
0Њ  
15Њ  
0Њ  
15Њ  
0.40  
0.80  
0.015  
0.031  
L1  
0.95 BS C  
0.037 BS C  
Conform s to J EDEC MO-187 VARIATION BA  
CONTROLING DIMENSIONS IN METRIC  
APPROX. DIMENSION IN INCHES  
© Zetex Sem iconductors plc 2004  
Europe  
Am ericas  
Asia Pacific  
Corporate Headquaters  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Sem iconductors plc  
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Oldham , OL9 9TY  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
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ISSUE 4 - OCTOBER 2004  
10  
S E M IC O N D U C T O R S  
厂商 型号 描述 页数 下载

DIODES

 		UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T2E6TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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