找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

UZX5T953GTA

型号:

UZX5T953GTA

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

6 页

PDF大小:

125 K

ZX5T953G  
100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN  
SOT223  
SUMMARY  
BVCEO = -100V : RSAT = 60m ; IC = -5A  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 100V PNP  
transistor offers extremely low on state losses making it ideal for use in DC-DC  
circuits and various driving and pow er m anagem ent functions.  
FEATURES  
SOT223  
5 am ps continuous current  
Up to 10 am ps peak current  
Very low saturation voltages  
APPLICATIONS  
Motor driving  
Line switching  
High side switches  
Subscriber line interface cards (SLIC)  
ORDERING INFORMATION  
PINOUT  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T953GTA  
ZX5T953GTC  
7”  
12m m  
1000 units  
4000 units  
em bossed  
13”  
DEVICE MARKING  
X5T953  
TOP VIEW  
ISSUE 2 - SEPTEMBER 2003  
1
S E M IC O N D U C T O R S  
ZX5T953G  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
UNIT  
Co lle cto r-b a s e vo lta g e  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
BV  
BV  
BV  
-140  
V
CBO  
CEO  
EBO  
-100  
V
-7  
V
A
(a )  
Co n tin u o u s co lle cto r cu rre n t  
I
-5  
-10  
C
Pe a k p u ls e cu rre n t  
(a )  
I
A
CM  
Po w e r d is s ip a tio n a t T =25°C  
A
P
3.0  
W
D
Lin e a r d e ra tin g fa cto r  
24  
m W/°C  
W
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
1.6  
D
Lin e a r d e ra tin g fa cto r  
12.8  
m W/°C  
°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
-55 to +150  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
UNIT  
(a )  
J u n ctio n to a m b ie n t  
R
42  
°C/W  
J A  
NOTES  
(a) For a device surface m ounted on 52m m x 52m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(b) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 2 - SEPTEMBER 2003  
2
S E M IC O N D U C T O R S  
ZX5T953G  
CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2003  
3
S E M IC O N D U C T O R S  
ZX5T953G  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
PARAMETER  
S YMBOL  
MIN.  
-140  
-140  
-100  
-7  
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
BV  
-160  
-160  
-115  
-8.1  
Ͻ1  
V
V
I =-100A  
C
CBO  
CER  
CEO  
EBO  
I =-1A, RBՅ1k⍀  
C
V
I =-10m A*  
C
V
I =-100A  
E
I
-20  
-0.5  
-20  
n A  
A  
n A  
A  
n A  
V =-100V  
CB  
CBO  
V
=-100V,T  
=100ЊC  
=100ЊC  
CB  
am b  
Co lle cto r cu t-o ff cu rre n t  
I
Ͻ1  
V =-100V  
CB  
CER  
R Յ 1k⍀  
-0.5  
-10  
V =-100V,T  
CB  
am b  
Em itte r cu t-o ff cu rre n t  
I
Ͻ1  
-20  
V
=-6V  
EBO  
EB  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
-30  
m V I =-0.1A, I =-10m A*  
C B  
CE(S AT)  
-70  
-90  
m V I =-1A, I =-100m A*  
C B  
-120  
-240  
-150  
-340  
m V I =-2A, I =-200m A*  
C B  
m V I =-4A, I =-400m A*  
C
B
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn -o n vo lta g e  
V
V
H
-985 -1100 m V I =-4A, I =-400m A*  
C B  
BE(S AT)  
BE(ON)  
FE  
-920 -1050 m V I =-4A, V =-2V*  
C
CE  
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
100  
100  
25  
250  
200  
50  
I =-10m A, V =-1V*  
C CE  
300  
I =-1A, V =-1V*  
C CE  
I =-3A, V =-1V*  
C
CE  
15  
30  
I =-4A, V =-1V*  
C CE  
5
I =-10A, V =-1V*  
C CE  
Tra n s itio n fre q u e n cy  
f
125  
MHz I =-100m A, V =-10V  
T
C
CE  
f=50MHz  
Ou tp u t ca p a cita n ce  
S w itch in g tim e s  
C
42  
42  
p F  
n s  
V
=-10V, f=1MHz*  
OBO  
CB  
t
t
I =-1A, V =-10V,  
C CC  
ON  
OFF  
540  
I
=I =-100m A  
B1 B2  
* Measured under pulsed conditions. Pulse w idth Յ 300s; duty cycle Յ2%.  
ISSUE 2 - SEPTEMBER 2003  
4
S E M IC O N D U C T O R S  
ZX5T953G  
TYPICAL CHARACTERISTICS  
ISSUE 2 - SEPTEMBER 2003  
5
S E M IC O N D U C T O R S  
ZX5T953G  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Millim eters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
DIM  
DIM  
Min  
-
Max  
Min  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
A
A1  
b
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
0.0905 BSC  
0.181 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
© Zetex plc 2003  
Europe  
Am ericas  
Asia Pacific  
Zetex plc  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Fields New Road  
Chadderton  
Streitfeldstraß e 19  
D-81673 München  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
3701-04 Metroplaza Tower 1  
Hing Fong Road  
Oldham , OL9 8NP  
United Kingdom  
Kwai Fong  
Hong Kong  
Germ any  
USA  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Th e s e o ffice s a re s u p p o rte d b y a g e n ts a n d d is trib u to rs in m a jo r co u n trie s w o rld -w id e .  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to w w w .zetex.com  
ISSUE 2 - SEPTEMBER 2003  
6
S E M IC O N D U C T O R S  
厂商 型号 描述 页数 下载

DIODES

UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

UZX5T2E6TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.218274s