PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94
ZTX958
FEATURES
*
*
*
*
*
0.5 Amp continuous current
Up to 1.5 Amps peak current
Very low saturation voltage
Excellent gain characteristics up to 1 Amp
Spice model available
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-400
-400
Collector-Emitter Voltage
Emitter-Base Voltage
V
-6
V
Peak Pulse Current
-1.5
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-0.5
A
Ptotp
Ptot
1.58
W
W
°C
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
-400
-400
-400
-6
-600
-600
-550
-8
V
V
V
V
IC=-100µA
Collector-Emitter Breakdown V(BR)CER
Voltag
IC=-1µA, RB ≤1KΩ
IC=-10mA*
Collector-Emitter Breakdown V(BR)CEO
Voltage
Emitter-Base Breakdown
Voltage
V(BR)EBO
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
ICER
R ≤1KΩ
-50
-1
nA
µA
VCB=-300V
VCB=-300V, Tamb=100°C
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-100
-150
-300
-150
-200
-400
mV
mV
mV
IC=-10mA, IB=-1mA*
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-790
-900
mV
IC=-500mA, IB=-100mA*
3-330
