PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 JUNE 94
ZTX948
FEATURES
*
*
*
*
*
*
*
4.5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltage
Excellent gain up to 20 Amps
Very low leakage
C
B
E
Exceptional gain linearity down to 10mA
Spice model available
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-40
-20
Collector-Emitter Voltage
Emitter-Base Voltage
V
-6
V
Peak Pulse Current
-20
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-4.5
A
Ptotp
1.58
W
W
°C
Ptot
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
-40
-40
-20
-6
-55
-55
-30
-8
V
V
V
V
IC=-100µA
Collector-Emitter Breakdown
Voltag
IC=-1µA, RB ≤1KΩ
IC=-10mA*
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
IE=-100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
µA
VCB=-30V
VCB=-30V, Tamb=100°C
ICER
R ≤1KΩ
-50
-1
nA
µA
VCB=-30V
CB=-30V, Tamb=100°C
V
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-45
-90
-180
-230
-100
-150
-250
-310
mV
mV
mV
mV
IC=-0.5A, IB=-10mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
IC=-5A, IB=-300mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-960
-1100 mV
IC=-5A, IB=-300mA*
3-309
