NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 - NOVEMBER 1995
ZTX853
FEATURES
*
*
*
*
*
100 Volt VCEO
4 Amps continuous current
Up to 10 Amps peak current
Very low saturation voltage
Ptot=1.2 Watts
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
200
Collector-Emitter Voltage
Emitter-Base Voltage
100
V
6
V
Peak Pulse Current
10
4
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
A
Ptotp
1.58
W
W
°C
Ptot
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
200
200
100
6
300
300
120
8
V
V
V
V
IC=100µA
Collector-Emitter Breakdown
Voltag
IC=1µA, RB ≤1KΩ
IC=10mA*
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
IE=100µA
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
1
nA
µA
VCB=150V
VCB=150V, Tamb=100°C
ICER
R ≤1KΩ
50
1
nA
µA
VCB=150V
VCB=150V, Tamb=100°C
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
14
100
160
50
150
200
mV
mV
mV
IC=0.1A, IB=5mA
IC=2A, IB=100mA
IC=4A, IB=400mA*
Base-Emitter
Saturation Voltage
VBE(sat)
960
1100 mV
IC=4A, IB=400mA*
3-297
