找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

UZTX758

型号:

UZTX758

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

3 页

PDF大小:

58 K

PNP SILICON PLANAR MEDIUM POWER  
ZTX758  
HIGH VOLTAGE TRANSISTOR  
ISSUE 1 – APRIL 94  
FEATURES  
*
*
*
400 Volt VCEO  
0.5 Amp continuous current  
Ptot=1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-400  
-400  
-5  
V
V
Peak Pulse Current  
-1  
A
Continuous Collector Current  
IC  
-500  
mA  
Power Dissipation at Tamb=25°C  
derate above 25°C  
Ptot  
1
5.7  
W
mW/ °C  
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +200  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
TYP.  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO -400  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
VCB=-320V  
VCE=-320V  
VEB=-4V  
Collector-Emitter  
Breakdown Voltage  
VCEO(SUS) -400  
V
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
-5  
V
Collector Cut-Off  
Current  
-100  
-100  
-100  
nA  
nA  
nA  
Collector Cut-Off  
Current  
ICES  
Emitter Cut-Off Current IEBO  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.30  
-0.25  
-0.50  
V
V
V
IC=-20mA, IB=-1mA  
IC=-50mA, IB=-5mA*  
IC=-100mA, IB=-10mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
-0.9  
V
IC=-100mA, IB=-10mA*  
Base-Emitter  
Turn On Voltage  
-0.9  
V
IC=-100mA, VCE=-5V*  
Static Forward Current hFE  
Transfer Ratio  
50  
50  
40  
IC=-1mA, VCE=-5V  
IC=-100mA, VCE=-5V*  
IC=-200mA, VCE=-10V*  
3-267  
ZTX758  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C)  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
CONDITIONS.  
Transition  
Frequency  
fT  
50  
MHz  
pF  
IC=-20mA, VCE=-20V  
f=20MHz  
Output Capacitance  
Switching times  
Cobo  
20  
VCB=-20V, f=1MHz  
ton  
toff  
140  
2000  
ns  
ns  
IC=-100mA, VC=-100V  
IB1=10mA, IB2=-20mA  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
MAX.  
UNIT  
Thermal Resistance:Junction to Ambient1  
Junction to Ambient2  
Junction to Case  
Rth(j-amb)1  
Rth(j-amb)2  
Rth(j-case)  
175  
116  
70  
°C/W  
°C/W  
°C/W  
†
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.  
2.5  
2.0  
200  
D=1 (D.C.)  
t
1
D=t1/tP  
Case temperature  
t
P
1.5  
100  
D=0.5  
1.0  
0.5  
0
D=0.2  
D=0.1  
Single Pulse  
0
0.0001 0.001  
-40 -20  
0
20  
0.01  
0.1  
1
10  
100  
40 60 80 100 120 140 160 180 200  
T -Temperature (°C)  
Pulse Width (seconds)  
Derating curve  
Maximum transient thermal impedance  
3-268  
ZTX758  
TYPICAL CHARACTERISTICS  
-55°C  
+25°C  
+100°C  
+175°C  
IC/IB=10  
IC/IB=20  
IC/IB=50  
IC/IB=10  
Tamb=25°C  
1.6  
1.4  
1.2  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0
0.001  
0.01  
0.1  
1
10 20  
0.001  
0.01  
0.1  
1
10 20  
IC - Collector Current (Amps)  
IC - Collector Current (Amps)  
CE(sat)  
V
C
CE(sat)  
V
C
v I  
v I  
-55°C  
+25°C  
+100°C  
+175°C  
+100°C  
+25°C  
-55°C  
IC/IB=10  
VCE=10V  
1.6  
1.4  
1.6  
1.4  
1.2  
300  
200  
100  
1.2  
1.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
0.001  
0.01  
0.1  
10 20  
1
0.001  
0.01  
0.1  
1
10 20  
IC - Collector Current (Amps)  
FE  
IC - Collector Current (Amps)  
BE(sat)  
C
C
v I  
h
v I  
V
Single Pulse Test at Tamb=25°C  
1.0  
0.1  
-55°C  
+25°C  
+100°C  
+175°C  
VCE=10V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
D.C.  
1s  
100ms  
10ms  
1.0ms  
0.1ms  
0.01  
0
0.001  
0.01  
0.1  
1
10 20  
0.001  
1
10  
100  
1000  
IC - Collector Current (Amps)  
BE(on)  
VCE - Collector Voltage (Volts)  
C
V
v I  
Safe Operating Area  
3-269  
厂商 型号 描述 页数 下载

NICHICON

UZT1A100MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A101MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A220MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A330MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A470MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1A470MCR1GB [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 47uF, Surface Mount, 2626, 4.5 MML CHIP ] 1 页

NICHICON

UZT1C100MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

NICHICON

UZT1C100MCL1GB [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 16V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1717, 4.5MML CHIP, ROHS COMPLIANT ] 1 页

NICHICON

UZT1C100MCR1GB [ Aluminum Electrolytic Capacitor, Polarized, Aluminum (wet), 16V, 20% +Tol, 20% -Tol, 10uF, Surface Mount, 1717, 4.5 MML CHIP ] 1 页

NICHICON

UZT1C101MCL 铝电解电容器[ ALUMINUM ELECTROLYTIC CAPACITORS ] 1 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.173691s