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UZC832A

型号:

UZC832A

品牌:

ZETEX[ ZETEX SEMICONDUCTORS ]

页数:

6 页

PDF大小:

89 K

830 SERIES  
SILICON 25V HYPERABRUPT VARACTOR DIODES  
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series  
Device description  
A range of silicon varactor diodes for use in  
frequency control and filtering. Featuring closely  
controlled CV characteristics and high Q. Low  
reverse current ensures very low phase noise  
perform ance. Available in single or dual com m on  
cathode form at in a wide rage of m iniature surface  
m ount packages.  
SOT23  
SOT323  
Features  
· Close tolerance C-V characteristics  
· High tuning ratio  
· Low I (typically 200pA)  
R
· Excellent phase noise perform ance  
· High Q  
· Range of m iniature surface m ount packages  
SOD523  
SOD323  
Applications  
· VCXO and TCXO  
· Wireless com m unications  
· Pagers  
· Mobile radio  
*Where steeper CV slopes are required there is the 12V hyperabrupt range.  
ZC930, ZMV930, ZV930, ZV931 Series  
ISSUE 8 - MARCH 2005  
S E M IC O N D U C T O R S  
1
830 SERIES  
TUNING CHARACTERISTICS at Tam b = 25°C  
PART  
Ca p a cit a n ce (p F)  
Min Q  
Ca p a cit a n ce Ra t io  
/ C  
V =2V, f=1MHz  
R
V =3V  
R
C
2
20  
f=50MHz  
a t f=1MHz  
MIN.  
7.38  
7.79  
9.0  
NOM.  
8.2  
MAX.  
9.02  
8.61  
11.0  
10.5  
16.5  
15.75  
24.2  
23.1  
36.3  
34.65  
51.7  
49.35  
74.8  
71.4  
110.0  
MIN.  
4.3  
4.3  
4.5  
4.5  
4.5  
4.5  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
5.0  
MAX.  
5.8  
5.8  
6.0  
6.0  
6.0  
6.0  
6.5  
6.5  
6.5  
6.5  
6.5  
6.5  
6.5  
6.5  
6.5  
829A  
829B  
830A  
830B  
831A  
831B  
832A  
832B  
833A  
833B  
834A  
834B  
835A  
835B  
836A  
250  
250  
300  
300  
300  
300  
200  
200  
200  
200  
200  
200  
100  
100  
100  
8.2  
10.0  
10.0  
15.0  
15.0  
22.0  
22.0  
33.0  
33.0  
47.0  
47.0  
68.0  
68.0  
100.0  
9.5  
13.5  
14.25  
19.8  
20.9  
29.7  
31.35  
42.3  
44.65  
61.2  
64.6  
90.0  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
MAX  
UNIT  
m A  
m W  
m W  
m W  
ЊC  
Fo rw a rd cu rre n t  
I
200  
330  
F
Po w e r d is s ip a tio n a t T  
Po w e r d is s ip a tio n a t T  
Po w e r d is s ip a tio n a t T  
= 25ЊC S OT23  
= 25ЊC S OD323  
= 25ЊC S OD523  
P
P
P
a m b  
a m b  
a m b  
to t  
to t  
to t  
330  
250  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
-55 to +150  
ELECTRICAL CHARACTERISTICS at Tam b = 25°C  
PARAMETER  
CONDITIONS  
= 10u A  
MIN.  
TYP.  
MAX.  
UNIT  
Re ve rs e b re a kd o w n vo lta g e  
Re ve rs e vo lta g e le a ka g e  
Te m p e ra tu re co e fficie n t o f ca p a cita n ce  
I
25  
V
n A  
R
V
= 20V  
0.2  
20  
R
V
= 3V, f = 1MHz  
300  
400  
p p Cm /ЊC  
R
ISSUE 8 - MARCH 2005  
S E M IC O N D U C T O R S  
2
830 SERIES  
TYPICAL CHARACTERISTICS  
ISSUE 8 - MARCH 2005  
S E M IC O N D U C T O R S  
3
830 SERIES  
ISSUE 8 - MARCH 2005  
S E M IC O N D U C T O R S  
4
830 SERIES  
SOT23 PACKAGE DIMENSIONS  
DIM  
Millim e t e rs  
In ch e s  
Min  
2.67  
1.20  
Ma x  
3.05  
1.40  
1.10  
0.53  
0.15  
Min  
0.105  
0.047  
Ma x  
0.120  
0.055  
0.043  
0.021  
0.0059  
A
B
C
D
F
0.37  
0.085  
0.0145  
0.0033  
G
K
L
NOM 1.9  
NOM 0.075  
0.01  
2.10  
0.10  
2.50  
0.0004  
0.0825  
0.004  
0.0985  
SOT323 PACKAGE DIMENSIONS  
DIM  
Millim e t e rs  
In ch e s  
Min  
0.91  
0.0  
Ma x  
1.16  
0.1  
Min  
0.036  
0.0  
Ma x  
0.046  
0.004  
0.016  
0.008  
0.070  
0.054  
A
B
D
E
F
0.33  
0.127  
1.52  
1.11  
0.4  
0.013  
0.005  
0.060  
0.044  
0.2  
1.77  
1.37  
G
ISSUE 8 - MARCH 2005  
S E M IC O N D U C T O R S  
5
830 SERIES  
SOD523 PACKAGE DIMENSIONS  
Millim eters  
Inches  
DIM  
Min  
Max  
Min  
Max  
A
A1  
A2  
b1  
c
0.800  
0.100  
0.800  
0.300  
0.220  
0.900  
1.700  
1.300  
0.400  
0.230  
10  
0.0314  
0.0039  
0.000  
0.600  
0.160  
0.080  
0.700  
1.500  
1.100  
0.200  
0.170  
4
0.000  
0.0236 0.0314  
0.0062 0.0118  
0.0031 0.0086  
0.0275 0.0354  
0.0590 0.0669  
0.0433 0.0511  
0.0078 0.0157  
0.0066 0.0090  
D
E
E1  
L
L1  
1Њ  
4Њ  
10Њ  
SOD323 PACKAGE DIMENSIONS  
DIM  
Millim e t e rs  
In ch e s  
Min  
1.8  
Ma x  
2.2  
Min  
Ma x  
0.087  
0.053  
0.039  
0.016  
0.01  
A
B
C
D
F
0.071  
0.045  
0.031  
0.008  
0.004  
0.047  
1.15  
0.8  
1.35  
1.0  
0.2  
0.4  
0.1  
0.25  
1.4  
G
1.2  
0.055  
© Zetex Sem iconductors plc 2004  
Europe  
Am ericas  
Asia Pacific  
Corporate Headquarters  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Sem iconductors plc  
Zetex Technology Park, Chadderton  
Oldham , OL9 9LL  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 8 - MARCH 2005  
S E M IC O N D U C T O R S  
6
厂商 型号 描述 页数 下载

DIODES

UZC829A [ Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt, SOT-23, 3 PIN ] 2 页

DIODES

UZC829ATA [ Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

DIODES

UZC829ATC [ Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

ZETEX

UZC829B [ Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt, ] 6 页

DIODES

UZC829B [ Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 8.2pF C(T), 25V, Silicon, Hyperabrupt ] 4 页

DIODES

UZC829BTC [ Variable Capacitance Diode, 8.2pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

ZETEX

UZC830A [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, ] 6 页

DIODES

UZC830ATA [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

DIODES

UZC830ATC [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, MINIATURE PACKAGE-3 ] 8 页

DIODES

UZC830B [ Variable Capacitance Diode, 10pF C(T), 25V, Silicon, Hyperabrupt, ] 2 页

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