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HYMP264R728-C4

型号:

HYMP264R728-C4

品牌:

HYNIX[ HYNIX SEMICONDUCTOR ]

页数:

18 页

PDF大小:

1841 K

64Mx72 bits  
DDR2 SDRAM Registered DIMM  
HYMP264R72(L)8  
Revision History  
No.  
History  
Draft Date  
Remark  
0.1  
1) Defined Target Spec.  
Feb. 2004  
1) Added Pin Capacitance Spec. & IDD Spec.  
2) Corrected SPD typo(Bye #22)  
Apr. 2004  
Nov. 2004  
0.2  
Corrected Pin assignment table  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.2 / Nov. 2004  
1
64Mx72 bits  
DDR2 SDRAM Registered DIMM  
HYMP264R72(L)8  
DESCRIPTION  
Hynix HYMP264R72(L)8 series is registered 240-pin double data rate 2 Synchronous DRAM Dual In-Line Memory  
Modules(DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMP264R72(L)8 series con-  
sists of eighteen 32Mx8 DDR2 SDRAMs in 60-Lead FBGA chipsize packages. Hynix HYMP264R72(L)8 series provide  
a high performance 8-byte interface in 133.35mm width form factor of industry stanard. It is suitable for easy inter-  
change and addition. Hynix HYMP264R72(L)8 series is designed for high speed of up to 333MHz and offers fully syn-  
chronous operations referenced to both rising and falling edges of differential clock inputs. While all addresses and  
control inputs are latched on the rising edges of the clock, Data, Data strobes and Write data masks inputs are sam-  
pled on both rising and falling edges of it. The data paths are internally pipelined and 4-bit prefetched to achieve very  
high bandwidth. All input and output voltage levels are compatible with SSTL_1.8. High speed frequencies, program-  
mable latencies and burst lengths allow variety of device operation in high performance memory system.  
Hynix HYMP264R72(L)8 series incorporates SPD(serial presence detect). Serial presence detect function is imple-  
mented via a serial 2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify  
DIMM type, capacity and other the information of DIMM and the last 128 bytes are available to the customer.  
FEATURES  
512MB (64M x 72) Registered DDR2 DIMM based  
on 32Mx8 DDR2 SDRAMs  
Fully differential clock operations (CK & /CK)  
Programmable CAS Latency 3 / 4 /5 supported  
JEDEC standard Double Data Rate2 Synchronous  
DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power  
Supply  
Programmable Burst Length 4 / 8 with both sequen-  
tial and interleave mode  
All inputs and outputs SSTL_1.8 compatible  
Auto refresh and self refresh supported  
JEDEC Standard 240-pin dual in-line memory mod-  
ule (DIMM)  
Error Check Correction (ECC) Capability  
7.8us refresh period at Lower than TCASE 85,  
3.9us( 85 ℃ < TCASE ≤ 95℃)  
All inputs and outputs are compatible with SSTL_1.8  
interface  
Serial Presence Detect(SPD) with EEPROM  
DDR2 SDRAM Package: 60ball FBGA  
OCD (Off-Chip Driver Impedance Adjustment) and  
ODT (On-Die Termination)  
ORDERING INFORMATION  
Type  
Part No.  
Description  
CL-tRCD-tRP  
Form Factor  
HYMP264R72(L)8-E4  
HYMP264R72(L)8-E3  
HYMP264R72(L)8-C5  
HYMP264R72(L)8-C4  
HYMP264R72(L)8-Y6  
HYMP264R72(L)8-Y5  
4-4-4  
3-3-3  
5-5-5  
4-4-4  
6-6-6  
5-5-5  
PC2-3200 (DDR2-400)  
240pin Registered DIMM  
133.35 mm x 30,00 mm  
(MO-237)  
two rank 512MB  
Reg. DIMM  
PC2-4300 (DDR2-533)  
PC2-5300 (DDR2-667)  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 0.2 / Nov. 2004  
2
HYMP264R72(L)8  
Input/Output Functional Description  
Symbol  
Type  
Polarity  
Pin Description  
Positive  
Edge  
Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.  
Negative line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.  
CK0~CK1  
IN  
Negative  
Edge  
CK0~CK1  
IN  
IN  
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low. By deacti-  
vating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.  
CKE0~CKE1  
Active High  
Active Low  
Enables the associated DDR2 SDRAM command decoder when low and disables the command  
decoder when high. When the command decoder is disabled, new commands are ignored but previous  
operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1  
S0~S1  
IN  
ODT0~ODT1  
RAS, CAS, WE  
Vref  
IN  
Active High  
Active Low  
On-Die Termination signals.  
When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define the  
command being entered.  
IN  
Supply  
Supply  
IN  
Reference voltage for SSTL18 inputs  
Power supplies for the DDR2 SDRAM output buffers to provide improved noise immunity. For all current  
DDR2 unbuffered DIMM designs, V  
V
DDQ  
shares the same power plane as V pins.  
DDQ  
DD  
BA0~BA1  
-
-
Selects which DDR2 SDRAM internal bank of four is activated.  
During a Bank Activate command cycle, Address input difines the row address(RA0~RA12)  
During a Read or Write command cycle, Address input defines the column address when sampled at the  
cross point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used  
to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high., autopre-  
charge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is dis-  
abled. During a Precharge command cycle., AP is used in conjunction with BA0-BAn to control which  
bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn  
inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.  
A0~A9,A10/AP  
A11~A12  
IN  
DQ0~DQ63,  
CB0~CB7  
Data and Check Bit Input/Output pins.  
IN  
IN  
-
DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with  
that input data during a write access. DM is sampled on both edges of DQS. Although DM pins are input  
only, the DM loading matches the DQ and DQS loading.  
DM0~DM8  
Active High  
Power and ground for the DDR2 SDRAM input buffers, and core logic. V and V  
pins are tied to  
DDQ  
DD  
V
,V  
Supply  
DD SS  
V
/V  
planes on these modules.  
DD DDQ  
Positive  
Edge  
Positive line of the differential data strobe for input and output data  
Negative line of the differential data strobe for input and output data  
DQS0~DQS17  
DQS0~DQS17  
SA0~SA1  
I/O  
I/O  
IN  
Negative  
Edge  
These signals are tied at the system planar to either V or V  
SS  
to configure the serial SPD  
DDSPD  
-
-
-
EEPROM address range.  
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may be con-  
nected from the SDA bus line to V on the system planar to act as a pull up.  
SDA  
I/O  
DDSPD  
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from  
SCL to V to act as a pull up on the system board.  
SCL  
IN  
DDSPD  
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane. EEPROM  
supply is operable from 1.7V to 3.6V.  
VDDSPD  
Supply  
The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When low, all  
register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will be set to low  
level (the PLL will remain synchronized with the input clock)  
RESET  
IN  
Par_In  
Err_Out  
TEST  
IN  
Parity bit for the Address and Control bus(“1”. Odd, “0”.Even)  
Parity error found in the Address and Control bus  
OUT  
Used by memory bus analysis tools(unused on memory DIMMs)  
Rev. 0.2 / Nov. 2004  
3
HYMP264R72(L)8  
PIN DESCRIPTION  
Pin  
Pin Description  
Clock Input,positive line  
Clock input,negative line  
Pin  
Pin Description  
CK0  
CK0  
ODT[1:0]  
VDDQ  
On Die Termination Inputs  
DQs Power Supply  
Data Input/Output  
CKE0~CKE1  
RAS  
Clock Enable Input  
DQ0~DQ63  
CB0~CB7  
DQS(0~8)  
DQS(0~8)  
Row Address Strobe  
Column Address Strobe  
Write Enable  
Data check bits Input/Output  
Data strobes  
CAS  
WE  
Data strobes,negative line  
S0  
Chip Select Input  
DM(0~8),DQS(9~17) Data Maskes/Data strobes  
A0~A9,A11~A12  
A10/AP  
BA0, BA1  
SCL  
Address input  
DQS(9~17)  
RFU  
Data strobes,negative line  
Reserved for Future Use  
No Connect  
Address input/Autoprecharge  
SDRAM Bank Address  
Serial Presence Detect(SPD) Clock Input  
NC  
TEST  
Memory bus test tool(Not Connected and Not  
Usable on DIMMs)  
SDA  
SPD Data Input/Output  
VDD  
Core Power  
2
SA0~SA2  
VDDQ  
I/O Power Supply  
E PROM Address Inputs  
Par_In  
Err_Out  
RESET  
Parity bit for the Address and Control bus  
Parity error found on the Addre  
Reset Enable  
VSS  
VREF  
Ground  
Reference Power Supply  
Power Supply for SPD  
VDDSPD  
CB0~CB7  
Data Strobe Inputs/Outputs  
PIN Location  
Front Side  
1 pin  
64 pin 65 pin  
120 pin  
184 pin  
240 pin  
185 pin  
121 pin  
Back Side  
Rev. 0.2 / Nov. 2004  
4
HYMP264R72(L)8  
PIN ASSIGNMENT  
Pin  
Name  
VREF  
VSS  
Pin  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
Name  
VSS  
Pin  
81  
Name  
DQ33  
VSS  
Pin  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
Name  
VSS  
Pin  
161  
162  
163  
164  
165  
166  
167  
168  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
181  
182  
183  
184  
Name  
CB4  
Pin  
201  
202  
203  
204  
205  
206  
207  
208  
209  
210  
211  
212  
213  
214  
215  
216  
217  
218  
219  
220  
221  
222  
223  
224  
225  
226  
227  
228  
229  
230  
231  
232  
233  
234  
235  
236  
237  
238  
239  
240  
Name  
VSS  
1
2
CB0  
82  
DQ4  
CB5  
DM4/DQS13  
DQS13  
VSS  
3
DQ0  
CB1  
83  
DQS4  
DQS4  
VSS  
DQ5  
VSS  
4
DQ1  
VSS  
84  
VSS  
DM8,DQS17  
DQS17  
VSS  
5
VSS  
DQS8  
DQS8  
VSS  
85  
DM0/DQS9  
DQS9  
VSS  
DQ38  
DQ39  
6
DQS0  
DQS0  
VSS  
86  
DQ34  
DQ35  
VSS  
7
87  
CB6  
VSS  
8
CB2  
88  
DQ6  
CB7  
DQ44  
DQ45  
9
DQ2  
CB3  
89  
DQ40  
DQ41  
VSS  
DQ7  
VSS  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
DQ3  
VSS  
90  
VSS  
VDDQ  
NC,CKE1  
VDD  
VSS  
VSS  
VDDQ  
CKE0  
VDD  
91  
DQ12  
DQ13  
VSS  
DM5/DQS14  
DQS14  
VSS  
DQ8  
92  
DQS5  
DQS5  
VSS  
DQ9  
93  
A15,NC  
A14,NC  
VDDQ  
A12  
VSS  
BA2,NC  
NC,Err_Out  
VDDQ  
A11  
94  
DM1/DQS10  
DQS10  
VSS  
DQ46  
DQS1  
DQS1  
VSS  
95  
DQ42  
DQ43  
VSS  
DQ47  
VSS  
96  
97  
RFU  
A9  
DQ52  
RESET  
NC  
A7  
98  
DQ48  
DQ49  
VSS  
RFU  
VDD  
DQ53  
VSS  
VDD  
99  
VSS  
A8  
VSS  
A5  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
DQ14  
DQ15  
VSS  
A6  
RFU  
DQ10  
DQ11  
VSS  
A4  
SA2  
VDDQ  
A3  
RFU  
VDDQ  
A2  
NC(TEST)  
VSS  
VSS  
DQ20  
DQ21  
VSS  
A1  
DM6/DQS15  
NC,DQS15  
VSS  
DQ16  
DQ17  
VSS  
VDD  
DQS6  
DQS6  
VSS  
VDD  
Key  
Key  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
VSS  
VSS  
DM2/DQS11  
DQS11  
VSS  
185  
186  
187  
188  
189  
190  
191  
192  
193  
194  
195  
196  
197  
198  
199  
200  
CK0  
CK0  
DQ54  
DQS2  
DQS2  
VSS  
DQ50  
DQ51  
VSS  
DQ55  
VDD  
VDD  
A0  
VSS  
NC,Err_Out  
VDD  
DQ22  
DQ23  
VSS  
DQ60  
DQ61  
DQ18  
DQ19  
VSS  
DQ56  
DQ57  
VSS  
VDD  
BA1  
A10/AP  
BA0  
VSS  
DQ28  
DQ29  
VSS  
VDDQ  
RAS  
DM7/DQS16  
NC,DQS16  
VSS  
DQ24  
DQ25  
VSS  
VDDQ  
WE  
DQS7  
DQS7  
VSS  
S0  
CAS  
DM3/DQS12  
DQS12  
VSS  
VDDQ  
ODT0  
A13,NC  
VDD  
VSS  
DQ62  
DQ63  
DQS3  
DQS3  
VSS  
VDDQ  
NC, S1  
NC, ODT1  
VDDQ  
VSS  
DQ58  
DQ59  
VSS  
VSS  
DQ30  
DQ31  
VSS  
VDDSPD  
SA0  
DQ26  
DQ27  
SDA  
SCL  
DQ36  
DQ37  
SA1  
DQ32  
NC= No Connect, RFU= Reserved for Future Use.  
Note:  
1. RESET(Pin 18) is connected to both OE of PLL and Reset of register.  
2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity.  
3. The Test pin(Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules(DIMMs)  
Rev. 0.2 / Nov. 2004  
5
HYMP264R72(L)8  
FUNCTIONAL BLOCK DIAGRAM  
/RS1  
/RS0  
DQS0  
DQS0  
/DQS0  
/DQS0  
DM0,DQS9  
DM0,DQS9  
DQS9  
DQS9  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
/CS  
/CS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
/CS  
/CS  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
D0  
D9  
D4  
D13  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
DQS0  
/DQS0  
DM0,DQS9  
DQS9  
DQS0  
/DQS0  
DM0,DQS9  
DQS9  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DQS /DQS  
/CS  
/CS  
/CS  
/CS  
DQ8  
DQ9  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
D1  
D10  
D5  
D14  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
DQS0  
/DQS0  
DM0,DQS9  
DQS9  
DQS0  
/DQS0  
DM0,DQS9  
DQS9  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DQS /DQS  
/CS  
/CS  
/CS  
/CS  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQS0  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
D6  
D15  
D2  
D11  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
DQ54  
DQ55  
DQS0  
/DQS0  
DM0,DQS9  
DQS9  
/DQS0  
DM0,DQS9  
DQS9  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
NU  
/RDQS  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DQS /DQS  
DQS /DQS  
/CS  
/CS  
/CS  
/CS  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
D3  
D12  
D7  
D16  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
DQS0  
/DQS0  
DM0,DQS9  
DQS9  
Serial  
PD  
VDD SPD  
SCL  
SCL  
WP  
SDA  
Serial PD  
VDD/VDDQ  
VREF  
DO-D17  
DO-D17  
DO-D17  
NU  
/RDQS  
NU  
/RDQS  
DM  
RDQS  
I/O 0  
DM  
RDQS  
I/O 0  
DQS /DQS  
DQS /DQS  
/CS  
/CS  
A0  
SA0  
A1  
SA2  
A1  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
SA1  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
VSS  
D8  
D17  
CK0  
PCK0 to PCK6, PCK8,PCK9 ==> CK: SDRAMs D0 toD17  
P
L
L
/CK0  
/PCK0 to /PCK6, /PCK8, /PCK9 ==> /CK: SDRAMs D0 toD17  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
PCK7 ==> CK: Register  
/PCK7 ==> /CK: Register  
1:2  
R
E
G
I
/S0*  
/RS0 to /CS :SDRAMs D0 to D8  
/RS1 to /CS :SDRAMs D9 to D17  
/RESET  
OE  
/S1*  
BA0 to BA1  
A0 to A12  
/RAS  
RBA0 - RBA1 ==> BA0 - BA1: SDRAMs D0 to D17  
/RA0 - RA12 ==> A0 to A12: SDRAMs D0 to D17  
/RRAS ==>/RAS: SDRAMs D0 to D17  
/RCAS ==>/CAS: SDRAMs D0 to D17  
/RWE ==>/WE: SDRAMs D0 to D17  
Notes:  
1. DQ-to-I/O wiring shown as recommanded but may be changed.  
2, Unless otherwise noted, resistor value are 22 Ohms +/- 5%.  
3. /RS0 and /RS1 alternate between the back and front sides of the DIMM.  
S
T
/CAS  
/WE  
E
R
CKE0  
RCKE0 ==> CKE0: SDRAMs D0 to D8  
RCKE1 ==> CKE1: SDRAMs D9 to D17  
RODT0 ==> ODT0: SDRAMs D0 to D8  
RODT1 ==> ODT1: SDRAMs D9 to D18  
CKE1  
* : /S0 connects to D/CS and /S1 connects to /CSR on a Register. /S1 connects to  
D/CS and /S0 conntects to /CSR on another Register.  
ODT0  
ODT1  
/RESET**  
** : /RESET,PCK7 and /PCK7 connect to both Registers. Other signals connect to one  
of two Registers.  
/RST  
PCK7**  
/PCK7**  
Rev. 0.2 / Nov. 2004  
6
HYMP264R72(L)8  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
TOPR  
Value  
0 ~ +55  
Unit  
Note  
oC  
Operating temperature(ambient)  
DRAM Component Case Temperature Range  
Operating Humidity(relative)  
1
oC  
%
TCASE  
HOPR  
0 ~+95  
2
1
1
1
10 to 90  
-50 ~ +100  
5 to 95  
oC  
oC  
Storage Temperature  
TSTG  
HSTG  
PBAR  
Storage Humidity(without condensation)  
Barometric Pressure(operating & storage)  
105 to 69  
K Pascal  
1,3  
Note :  
1. Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional  
operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating conditions for extended periods  
may affect reliablility.  
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to tREFI=3.9㎲.  
For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.  
3. Up to 9850 ft.  
Operating Condtions(AC&DC)  
DC OPERATING CONDITIONS (SSTL_1.8)  
Parameter  
Symbol  
VDD  
Min  
Max  
Unit  
Note  
1.7  
1.7  
1.9  
1.9  
V
V
V
V
V
Power Supply Voltage  
VDDQ  
VREF  
1
2
Input Reference Voltage  
EEPROM Supply Voltage  
0.49 x VDDQ  
1.7  
0.51 x VDDQ  
3.6  
VDDSPD  
VTT  
VREF+0.04  
3
VREF-0.04  
Termination Voltage  
Note :  
1.VDDQ must be less than or equal to VDD  
.
2. Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc)  
3. VTT of transmitting device must track VREF of receiving device.  
Input DC Logic Level  
Parameter  
Input High Voltage  
Symbol  
Min  
Max  
Unit  
Note  
VIH(DC)  
VIL(DC)  
VREF + 0.125  
-0.30  
VDDQ + 0.3  
V
V
Input Low Voltage  
VREF - 0.125  
Rev. 0.2 / Nov. 2004  
7
HYMP264R72(L)8  
Input AC Logic Level  
Parameter  
Symbol  
Min  
Max  
Unit  
Note  
AC Input logic High  
AC Input logic Low  
VIH(AC)  
VIL(AC)  
VREF + 0.250  
-
-
V
V
VREF - 0.250  
AC Input Test Conditions  
Symbol  
VREF  
Condition  
Input reference voltage  
Value  
Units  
Notes  
0.5 * VDDQ  
1.0  
V
1
VSWING(MAX)  
SLEW  
Input signal maximum peak to peak swing  
Input signal minimum slew rate  
V
1
1.0  
V/ns  
2, 3  
Notes:  
1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.  
2. The input signal minimum slew rate is to be maintained over the range from VIL(dc) max to VIH(ac) min for rising edges and the  
range from VIH(dc) min to VIL(ac) max for falling edges as shown in the below figure.  
3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions and VIH(ac) to  
VIL(ac) on the negative transitions.  
Start of Rising Edge Input Timing  
Start of Falling Edge Input Timing  
V
V
V
V
V
V
V
DDQ  
IH(ac)  
IH(dc)  
REF  
min  
min  
V
SWING(MAX)  
max  
max  
IL(dc)  
IL(ac)  
SS  
delta TF  
V
delta TR  
Rising Slew =  
V
min - V  
max  
min -  
V
max  
IL(ac)  
IH(ac)  
IL(dc)  
IH(dc)  
Falling Slew =  
delta TR  
delta TF  
< Figure : AC Input Test Signal Waveform >  
Rev. 0.2 / Nov. 2004  
8
HYMP264R72(L)8  
Differential Input AC logic Level  
Symbol  
Parameter  
ac differential input voltage  
ac differential cross point voltage  
Min.  
Max.  
Units  
Notes  
VID (ac)  
0.5  
VDDQ + 0.6  
V
1
VIX (ac)  
0.5 * VDDQ - 0.175  
0.5 * VDDQ + 0.175  
V
2
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS, LDQS, UDQS and  
UDQS.  
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as CK, DQS, LDQS  
or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to VIH(DC) - V  
IL(DC).  
V
DDQ  
V
TR  
Crossing point  
V
ID  
V
V
IX or OX  
V
CP  
V
SSQ  
< Differential signal levels >  
Notes:  
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS,  
LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V IH(AC)  
- V IL(AC).  
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in  
VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.  
Differential AC output parameters  
Symbol  
Parameter  
Min.  
Max.  
Units  
Notes  
VOX (ac)  
0.5 * VDDQ - 0.125  
0.5 * VDDQ + 0.125  
V
1
ac differential cross point voltage  
Notes:  
1. The typical value of VOX(AC) is expected to be about 0.5 * V DDQ of the transmitting device and VOX(AC) is expected to track variations  
in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.  
Rev. 0.2 / Nov. 2004  
9
HYMP264R72(L)8  
Output Buffer Levels  
Output AC Test Conditions  
Symbol  
VOH  
Parameter  
SSTL_18 Class II  
VTT + 0.603  
VTT - 0.603  
Units  
Notes  
Minimum Required Output Pull-up under AC Test Load  
Maximum Required Output Pull-down under AC Test Load  
Output Timing Measurement Reference Level  
V
V
V
VOL  
VOTR  
0.5 * VDDQ  
1
1. The VDDQ of the device under test is referenced.  
Output DC Current Drive  
Symbol  
IOH(dc)  
Parameter  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
SSTl_18 Class II  
- 13.4  
Units  
mA  
Notes  
1, 3, 4  
2, 3, 4  
IOL(dc)  
13.4  
mA  
1.  
2.  
V
DDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280  
mV.  
DDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.  
V
3. The dc value of VREF applied to the receiving device is set to VTT  
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current  
capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The  
actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define  
a convenient driver current for measurement.  
OCD defalut characteristics  
Description  
Output impedance  
Parameter  
Min  
12.6  
0
Nom  
Max  
23.4  
4
Unit  
ohms  
ohms  
V/ns  
Notes  
1,2  
18  
Pull-up and pull-down mismatch  
Output slew rate  
1,2,3  
Sout  
1.5  
-
5
1,4,5,6  
Note:  
1. Absolute Specifications (0°C TCASE +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)  
2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less  
than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV. Impedance measurement condition for output sink dc current:  
VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV.  
3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage.  
4. Slew rate measured from vil(ac) to vih(ac).  
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC.  
6. DRAM output slew rate specification applies to 400MT/s & 533MT/s speed bins. Output slew rate at 667&800MT/s will be added with  
JEDEC process.  
Rev. 0.2 / Nov. 2004  
10  
HYMP264R72(L)8  
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )  
Parameter  
Pin  
Symbol  
Min  
Max  
Unit  
Input Capacitance  
Input Capacitance  
Input Capacitance  
Input Capacitance  
Input Capacitance  
CK0, /CK0  
CKE, ODT  
/CS  
CCK  
CI1  
CI2  
CI3  
CIO  
7
8
8
8
7
11  
12  
12  
12  
11  
pF  
pF  
pF  
pF  
pF  
Address, /RAS, /CAS, /WE  
DQ,DM,DQS, /DQS  
Note :  
1. Pins not under test are tied to GND.  
2. These value are guaranteed by design and tested on a sample basis only.  
IDD Specifications  
HYMP264R72(L)8  
Parameter  
PC2 3200  
max.  
PC2 4300  
PC2 5300  
max.  
Symbol  
max.  
Unit Note  
Operating one bank active-precharge  
current  
IDD0  
2180  
2270  
2315  
2450  
2540  
mA  
Operating one bank active-read-precharge  
current  
2405  
mA  
IDD1  
Precharge power-down current  
Precharge quiet standby current  
Precharge standby current  
IDD2P  
IDD2Q  
IDD2N  
IDD3P(F)  
IDD3P(S)  
IDD3N  
IDD4R  
IDD4W  
IDD5B  
IDD6  
740  
1460  
1595  
1190  
1010  
1820  
2810  
2810  
2285  
422  
740  
1460  
1685  
1190  
1010  
1910  
3035  
3035  
2420  
422  
740  
1460  
1775  
1190  
1010  
2000  
3260  
3260  
2555  
422  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Active power-down current  
Active Standby Current  
Operating burst read current  
Operating Current  
Burst auto refresh current  
Self Refresh Current  
386  
386  
386  
IDD6(L)  
IDD7  
3485  
3620  
3755  
Operating bank interleave read current  
Rev. 0.2 / Nov. 2004  
11  
HYMP264R72(L)8  
IDD Meauarement Conditions  
Symbol  
Conditions  
Units  
t
t
t
t
t
t
Operating one bank active-precharge current; CK = CK(IDD), RC = RC(IDD), RAS = RAS-  
min(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus  
inputs are SWITCHING  
mA  
mA  
IDD0  
IDD1  
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;  
t
t
t
t
t
t
t
t
CK = CK(IDD), RC = RC (IDD), RAS = RASmin(IDD), RCD = RCD(IDD) ; CKE is HIGH, CS is HIGH  
between valid commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W  
t
t
Precharge power-down current ; All banks idle ; CK = CK(IDD) ; CKE is LOW ; Other control and address  
mA  
mA  
mA  
IDD2P  
IDD2Q  
IDD2N  
bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge quiet standby current;All banks idle; CK = CK(IDD);CKE is HIGH, CS is HIGH; Other control  
and address bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge standby current; All banks idle; CK = CK(IDD); CKE is HIGH, CS is HIGH; Other control and  
address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
t
t
mA  
mA  
Active power-down current; All banks open; CK = CK(IDD); CKE is LOW;  
Other control and address bus inputs are STABLE; Data bus inputs are  
FLOATING  
Fast PDN Exit MRS(12) = 0  
Slow PDN Exit MRS(12) = 1  
IDD3P  
IDD3N  
IDD4W  
IDD4R  
t
t
t
t
t
t
Active standby current; All banks open; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is  
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data  
bus inputs are SWITCHING  
mA  
mA  
mA  
t
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; CK =  
t
t
t
t
t
CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),  
t
t
t
t
t
t
AL = 0; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between valid  
commands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W  
t
t
t
Burst refresh current; CK = CK(IDD); Refresh command at every RFC(IDD) interval; CKE is HIGH, CS is  
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are  
SWITCHING  
IDD5B  
IDD6  
mA  
mA  
Self refresh current; CK and CK at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING;  
Data bus inputs are FLOATING  
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL  
t
t
t
t
t
t
t
t
t
t
= RCD(IDD)-1* CK(IDD); CK = CK(IDD), RC = RC(IDD), RRD = RRD(IDD), RCD = 1* CK(IDD); CKE is  
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pat-  
tern is same as IDD4R; - Refer to the following page for detailed timing conditions  
mA  
IDD7  
Note:  
1. IDD specifications are tested after the device is properly initialized  
2. Input slew rate is specified by AC Parametric Test Condition  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combina-  
tions of EMRS bits 10 and 11.  
5. Definitions for IDD  
LOW is defined as Vin VILAC(max)  
HIGH is defined as Vin VIHAC(min)  
STABLE is defined as inputs stable at a HIGH or LOW level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as:  
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and  
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes.  
Rev. 0.2 / Nov. 2004  
12  
HYMP264R72(L)8  
Electrical Characteristics & AC Timings  
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin  
Speed  
Bin(CL-tRCD-tRP)  
Parameter  
CAS Latency  
tRCD  
DDR2-667(Y5)  
DDR2-667(Y6)  
DDR2-533(C4)  
DDR2-533(C5)  
DDR2-400(C3)  
DDR2-400(C4)  
Unit  
5-5-5  
min  
5
6-6-6  
min  
6
4-4-4  
min  
4
5-5-5  
min  
3-3-3  
min  
3
4-4-4  
min  
4
5
ns  
ns  
ns  
ns  
ns  
15  
18  
15  
18.75  
18.75  
63.75  
45  
15  
20  
tRP  
15  
18  
15  
15  
20  
tRC  
55  
63  
60  
55  
65  
tRAS  
40  
45  
45  
40  
45  
AC Timing Parameters by Speed Grade  
DDR2-400  
DDR2-533  
DDR2-667  
Parameter  
Symbol  
Unit  
Note  
Min  
-600  
-500  
0.45  
0.45  
Max  
Min  
-500  
-500  
0.45  
0.45  
Max  
500  
Min  
Max  
450  
400  
0.55  
0.55  
Data-Out edge to Clock edge Skew  
DQS-Out edge to Clock edge Skew  
Clock High Level Width  
tAC  
tDQSCK  
tCH  
600  
500  
-450  
-400  
0.45  
0.45  
ps  
ns  
450  
0.55  
0.55  
0.55  
0.55  
CK  
CK  
Clock Low Level Width  
tCL  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
min  
(tCL,tCH)  
Clock Half Period  
tHP  
-
-
-
ns  
System Clock Cycle Time  
tCK  
tDH  
tDS  
5000  
400  
400  
0.6  
8000  
3750  
350  
350  
0.6  
8000  
3000  
300  
300  
0.6  
8000  
ps  
ps  
DQ and DM input hold time  
-
-
-
-
-
-
-
-
-
1
1
DQ and DM input setup time  
ps  
Control & Address input Pulse Width for each input  
tIPW  
tCK  
DQ and DM input pulse witdth for each input pulse  
width for each input  
tDIPW  
tHZ  
0.35  
-
-
0.35  
-
-
0.35  
-
-
tCK  
ps  
tAC max  
tAC max  
tAC max  
Data-out high-impedance window from CK, /CK  
DQS low-impedance time from CK/CK  
DQ low-impedance time from CK/CK  
tLZ(DQS)  
tLZ(DQ)  
tDQSQ  
tAC min tAC max  
tAC min tAC max  
tAC min tAC max  
ps  
ps  
ps  
2*tAC min tAC max 2*tAC min tAC max 2*tAC min tAC max  
DQS-DQ skew for DQS and associated DQ  
signals  
-
350  
-
300  
-
tbd  
DQ hold skew factor  
tQHS  
tQH  
-
450  
-
-
400  
-
-
tbd  
-
ps  
ps  
DQ/DQS output hold time from DQS  
tHP - tQHS  
WL - 0.25  
tHP - tQHS  
WL - 0.25  
tHP - tQHS  
WL - 0.25  
tDQSS  
WL +  
0.25  
WL +  
0.25  
WL +  
0.25  
tCK  
Write command to first DQS latching transition  
DQS input high pulse width  
DQS input low pulse width  
tDQSH  
tDQSL  
tDSS  
0.35  
0.35  
0.2  
0.2  
2
-
0.35  
0.35  
0.2  
0.2  
2
-
0.35  
0.35  
0.2  
0.2  
2
-
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
-
-
-
DQS falling edge to CK setup time  
DQS falling edge hold time from CK  
Mode register set command cycle time  
Write postamble  
-
-
-
-
-
-
tDSH  
tMRD  
tWPST  
-
-
-
0.4  
0.6  
0.4  
0.6  
0.4  
0.6  
Rev. 0.2 / Nov. 2004  
13  
HYMP264R72(L)8  
- continued -  
DDR2 400  
DDR2 533  
DDR2 667  
Parameter  
Symbol  
Unit  
Note  
Min  
Max  
Min  
Max  
Min  
Max  
Write preamble  
tWPRE  
tIH  
0.25  
600  
600  
0.9  
-
-
0.25  
500  
500  
0.9  
-
-
tbd  
tbd  
tbd  
0.9  
0.4  
75  
-
-
tCK  
ps  
Address and control input hold time  
Address and control input setup time  
Read preamble  
tIS  
-
-
-
ps  
tRPRE  
tRPST  
tRFC  
1.1  
0.6  
-
1.1  
0.6  
-
1.1  
0.6  
-
tCK  
tCK  
ns  
Read postamble  
0.4  
0.4  
Auto-Refresh to Active/Auto-Refresh  
command period  
75  
75  
Row Active to Row Active Delay  
tRRD  
7.5  
-
7.5  
-
7.5  
-
ns  
CAS to CAS command delay  
Write recovery time  
tCCD  
tWR  
2
2
2
tCK  
ns  
15  
-
-
15  
-
-
15  
-
-
(tWR/tCK)  
+
(tRP/tCK)  
(tWR/tCK)  
+
(tRP/tCK)  
(tWR/tCK)  
+
(tRP/tCK)  
Auto Precharge Write Recovery + Precharge  
Time  
tDAL  
tCK  
ns  
7.5  
-
7.5  
-
Write to Read Command Delay  
tWTR  
10  
-
Internal read to precharge command delay  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tRTP  
tXSNR  
tXSRD  
tXP  
7.5  
tRFC + 10  
200  
7.5  
tRFC + 10  
200  
7.5  
tRFC + 10  
200  
ns  
ns  
-
-
-
-
-
-
tCK  
tCK  
Exit precharge power down to any non-read  
command  
2
2
2
Exit active power down to read command  
tXARD  
2
2
2
tCK  
tCK  
Exit active power down to read command  
(Slow exit, Lower power)  
tXARDS  
6 - AL  
6 - AL  
6 - AL  
t
CKE minimum pulse width  
(high and low pulse width)  
3
2
3
2
3
2
tCK  
CKE  
t
ODT turn-on delay  
ODT turn-on  
2
2
2
tCK  
ns  
AOND  
t
tAC(min) tAC(max) tAC(min) tAC(max) tAC(min) tAC(max)  
+1 +1 +0.7  
AON  
t
ODT turn-on(Power-Down mode)  
tAC(min)+2 2tCK+tAC tAC(min)+2 2tCK+tAC tAC(min)+2 2tCK+tAC  
ns  
AONPD  
(max)+1  
(max)+1  
(max)+1  
t
2.5  
2.5  
2.5  
2.5  
2.5  
2.5  
tCK  
ns  
ODT turn-off delay  
ODT turn-off  
AOFD  
t
tAC(min) tAC(max) tAC(min) tAC(max) tAC(min) tAC(max)  
+ 0.6 + 0.6 + 0.6  
AOF  
tAOFPD  
ns  
tAC(min)+ 2.5tCK+t tAC(min)+ 2.5tCK+t tAC(min)+ 2.5tCK+t  
ODT turn-off (Power-Down mode)  
2
AC(max)  
+1  
2
AC(max)  
+1  
2
AC(max)  
+1  
ODT to power down entry latency  
ODT power down exit latency  
OCD drive mode output delay  
tCK  
tCK  
ns  
tANPD  
tAXPD  
tOIT  
3
8
0
3
8
0
3
8
0
12  
12  
12  
ns  
Minimum time clocks remains ON after  
CKE asynchronously drops LOW  
tDelay tIS+tCK+tI  
H
tIS+tCK+tI  
H
tIS+tCK+tI  
H
us  
us  
tREFI  
tREFI  
2
3
-
-
7.8  
3.9  
-
-
7.8  
3.9  
-
-
7.8  
3.9  
Average periodic Refresh Interval  
Note :  
1. For details and notes, please refer to the relevant HYNIX component datasheet(HY5PS25821(L)F).  
2. C TCASE ≤ 85°C  
3. 85°C TCASE ≤ 95°C  
Rev. 0.2 / Nov. 2004  
14  
HYMP264R72(L)8  
PACKAGE OUTLINE  
Front  
Side  
133.35  
4.0 max  
R
E
G
I
S
T
E
R
4.0±0.1  
30.0  
PLL  
Detail-A  
Detail-B  
1.27 ± 0.10  
5.175  
63.0  
55.0  
5.175  
5.0  
Back  
R
E
G
I
S
T
E
R
3.0  
3.0  
Detail of Contacts A  
Detail of Contacts B  
2.50  
1.0  
0.8  
± 0.05  
1.50  
± 0.10  
5.00  
Note) All dimensions are typical millimeter scale unless otherwise stated.  
Rev. 0.2 / Nov. 2004  
15  
SERIAL PRESENCE DETECT  
SPD SPECIFICATION  
(64Mx72 Registered DDR2 DIMM)  
Rev. 0.2 / Nov. 2004  
16  
HYMP264R72(L)8  
SERIAL PRESENCE DETECT  
Bin Sort : E3(DDR2 400 3-3-3), E4(DDR2 400 4-4-4),  
C4(DDR2 533 4-4-4), C5(DDR2 533 5-5-5)  
Speed  
Grade  
Byte#  
Function Description  
Function Supported  
Hexa Value Note  
0
1
2
3
4
5
6
7
8
Number of bytes utilized by module manufacturer  
Total number of Bytes in SPD device  
Fundamental memory type  
all  
all  
128 Bytes  
256 Bytes  
DDR2 SDRAM  
13  
80  
08  
08  
all  
Number of row address on this assembly  
Number of column address on this assembly  
Number of DIMM ranks  
all  
0D  
0B  
61  
48  
00  
05  
50  
3D  
60  
50  
02  
82  
08  
08  
00  
0C  
04  
38  
00  
01  
00  
01  
50  
3D  
60  
50  
50  
00  
60  
00  
3C  
50  
4B  
1E  
3C  
50  
4B  
28  
2D  
40  
60  
50  
60  
50  
40  
35  
40  
35  
3C  
28  
1E  
1E  
00  
00  
50  
37  
3C  
41  
3F  
1
1
all  
11  
all  
30.0 mm/ planar/ 2 ranks  
72 Bits  
-
Module data width  
all  
Module data width (continued)  
all  
Voltage Interface level of this assembly  
all  
SSTL 1.8V  
5.0 ns  
E3,E4  
C4,C5  
E3,E4  
C4,C5  
all  
2
2
9
DDR SDRAM cycle time at CL=5  
3.75 ns  
+/-0.6ns  
+/-0.5ns  
ECC  
10  
DDR SDRAM access time from clock (tAC)  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
DIMM Configuration type  
Refresh Rate and Type  
all  
7.8us & Self refresh  
x8  
Primary DDR SDRAM width  
Error Checking DDR SDRAM data width  
Reserved  
all  
all  
x8  
-
Burst Lengths Supported  
Number of banks on each SDRAM Device  
CAS latency supported  
all  
all  
all  
4,8  
4
3, 4, 5  
Reserved  
-
DIMM Type  
all  
all  
Regular RDIMM  
Normal  
Supports weak driver  
5.0ns  
DDR SDRAM module attributes  
DDR SDRAM device attributes : General  
all  
E3,E4,C5  
C4  
23  
24  
25  
26  
DDR SDRAM cycle time at CL=4(tCK)  
2
2
2
2
3.75ns  
+/-0.6ns  
+/-0.5ns  
5.0ns  
E3,E4,C5  
C4  
DDR SDRAM access time from clock at CL=4(tAC)  
DDR SDRAM cycle time at CL=3(tCK)  
E3,C4  
E4,C5  
E3,C4  
E4,C5  
E3, C4  
E4  
Undefined  
+/-0.6ns  
Undefined  
15ns  
DDR SDRAM access time from clock at CL=3(tAC)  
27  
28  
29  
Minimum Row Precharge Time(tRP)  
20ns  
C5  
18.75ns  
7.5ns  
Minimum Row Activate to Row Active delay(tRRD)  
Minimum RAS to CAS delay(tRCD)  
all  
E3, C4  
E4  
15ns  
20ns  
C5  
18.75ns  
40ns  
E3  
30  
31  
32  
Minimum active to precharge time(tRAS)  
Module rank density  
E4,C4,C5  
all  
48ns  
256MB  
0.6ns  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
all  
Address and command input setup time before clock (tIS)  
0.5ns  
0.6ns  
33  
34  
Address and command input hold time after clock (tIH)  
Data input setup time before clock (tDS)  
0.5ns  
0.40ns  
0.35ns  
0.40ns  
0.35ns  
15ns  
35  
36  
37  
Data input hold time after clock (tDH)  
Write recovery time(tWR)  
E3, E4  
C4, C5  
all  
10ns  
Internal write to read command delay(tWTR)  
7.5ns  
38  
39  
Internal read to precharge command delay(tRTP)  
Memory analysis probe characteristics  
7.5ns  
Undefined  
Undefined  
tRC extended  
55ns  
E3,E4,C4  
C5  
40  
Extension of byte 41 tRC and byte 42 tRFC  
E3  
C4  
60ns  
41  
Minimum active / auto-refresh time ( tRC)  
E4  
65ns  
C5  
63.75ns  
Rev. 0.2 / Nov. 2004  
17  
HYMP264R72(L)8  
- continued -  
Speed  
Grade  
Byte#  
Function Description  
Function Supported  
Hexa Value Note  
Minimum auto-refresh to active/auto-refresh  
command period(tRFC)  
42  
43  
44  
all  
75ns  
4B  
Maximum cycle time (tCK max)  
all  
8.0ns  
80  
23  
1E  
2D  
28  
0F  
00  
10  
74  
FB  
EE  
D2  
AD  
00  
E3, E4  
C4, C5  
E3, E4  
C4, C5  
0.35ns  
Maximim DQS-DQ skew time(tDQSQ)  
0.30ns  
0.45ns  
45  
46  
Maximum read data hold skew factor(tQHS)  
PLL Relock time  
0.40ns  
15us  
Undefined  
47~61 Superset information(may be used in future)  
62  
63  
64  
SPD Revision code  
1.0  
E3  
E4  
C4  
C5  
-
-
Checksum for Bytes 0~62  
Manufacturer JEDEC ID Code  
-
-
Hynix JEDEC ID  
-
65~71 --------- Manufacturer JEDEC ID Code  
Hynix(Korea Area)  
HSA(United States Area)  
HSE(Europe Area)  
HSJ(Japan Area)  
Singapore  
0*  
1*  
2*  
3*  
4*  
5*  
72  
Manufacturing location  
6
Asia Area  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
Manufacture part number(Hynix Memory Module)  
-------- Manufacture part number(Hynix Memory Module)  
-------- Manufacture part number(Hynix Memory Module)  
Manufacture part number (DDR2 SDRAM)  
---------Manufacture part number(Memory density)  
Manufacture part number(Module Depth)  
H
Y
48  
59  
4D  
50  
32  
36  
34  
52  
37  
32  
38  
2D  
45  
43  
33  
34  
35  
20  
M
P
2
6
------- Manufacture part number(Module Depth)  
Manufacture part number(Module type)  
4
R
7
Manufacture part number(Data width)  
-------Manufacture part number(Data width)  
Manufacture part number(Component configuration)  
Manufacture part number(Hyphen)  
2
8
‘-’  
E
E3, E4  
C4, C5  
E3  
85  
Manufacture part number(Minimum cycle time)  
C
3
86  
-------Manufacture part number(Minimum cycle time)  
E4,C4  
C5  
4
5
87~90 Manufacture part number(T.B.D)  
Blank  
91  
92  
93  
94  
Manufacture revision code(for Component)  
Manufacture revision code (for PCB)  
Manufacturing date(Year)  
3
3
4
Manufacturing date(Week)  
95~98 Module serial number  
99~127 Manufacturer specific data (may be used in future)  
128~255 Open for customer use  
Undefined  
Undefined  
00  
00  
5
5
Note :  
1. The bank address is excluded  
2. This value is based on the component specification  
3. These bytes are programmed by code of date week & date year  
4. These bytes apply to Hynix’s own Module Serial Number System  
5. These bytes undefined and coded as ‘00h’  
6. Refer to Hynix Web Site  
Byte 83~84, Low Power Part  
Speed  
Grade  
Byte #  
Function Description  
Function Supported  
Hexa Value  
Note  
83  
84  
Manufacture part number(Low power part)  
L
8
4C  
38  
Manufacture part number(Component Configuration)  
Rev. 0.2 / Nov. 2004  
18  
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