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HYMP512P72BP8-Y5

型号:

HYMP512P72BP8-Y5

品牌:

HYNIX[ HYNIX SEMICONDUCTOR ]

页数:

26 页

PDF大小:

331 K

240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver.  
This Hynix registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball  
Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM  
series provide a high performance 8 byte interface in 133.35mm width form factor of industry standard. It is suitable  
for easy interchange and addition.  
ORDERING INFORMATION  
Parity  
Support  
Part Name  
Density  
Org.  
Component Configuration  
Ranks  
HYMP564R72BP8-E3/C4  
512MB  
512MB  
1GB  
64Mx72  
64Mx72  
64Mx8(HY5PS12821BFP)*9  
64Mx8(HY5PS12821BFP)*9  
64Mx8(HY5PS12821BFP)*18  
64Mx8(HY5PS12821BFP)*18  
128Mx4(HY5PS12421BFP)*18  
128Mx4(HY5PS12421BFP)*18  
128Mx4(HY5PS12421BFP)*36  
128Mx4(HY5PS12421BFP)*36  
1
1
2
2
1
1
2
2
X
O
X
O
X
O
X
O
HYMP564P72BP8-E3/C4/Y5/S5  
HYMP512R72BP8-E3/C4  
128Mx72  
128Mx72  
128Mx72  
128Mx72  
256Mx72  
256Mx72  
HYMP512P72BP8-E3/C4/Y5/S5  
HYMP512R72BP4-E3/C4  
1GB  
1GB  
HYMP512P72BP4-E3/C4/Y5/S5  
HYMP525R72BP4-E3/C4  
1GB  
2GB  
HYMP525P72BP4-E3/C4/Y5/S5  
2GB  
Note:  
1. “P” of part number[8th digit] stands for Parity Registered DIMM.  
2. “P” of part number[12th digit] stands for Lead free products.  
SPEED GRADE & KEY PARAMETERS  
E3 (DDR2-400)  
C4 (DDR2-533)  
Y5 (DDR2-667)  
S5 (DDR2-800)  
Unit  
Speed@CL3  
Speed@CL4  
Speed@CL5  
CL-tRCD-tRP  
400  
400  
-
400  
533  
-
400  
533  
400  
533  
Mbps  
Mbps  
Mbps  
tCK  
667  
800  
3-3-3  
4-4-4  
5-5-5  
5-5-5  
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any  
responsibility for use of circuits described. No patent licenses are implied.  
Rev. 1.1 / July 2006  
1
1240pin Registered DDR2 SDRAM DIMMs  
FEATURES  
JEDEC standard 1.8V +/- 0.1V Power Supply  
VDDQ : 1.8V +/- 0.1V  
All inputs and outputs are compatible with SSTL_1.8 interface  
4 Bank architecture  
Posted CAS  
Programmable CAS Latency 3 , 4 , 5  
OCD (Off-Chip Driver Impedance Adjustment)  
ODT (On-Die Termination)  
Fully differential clock operations (CK & CK)  
Programmable Burst Length 4 / 8 with both sequential and interleave mode  
Average Auto Refresh Period 7.8us under TCASE 85, 3.9us at 85< TCASE 95 ℃  
High Temperature Self-Refresh Entry enablble features  
PASR(Partial Array Self- Refresh)  
8192 refresh cycles / 64ms  
Serial presence detect with EEPROM  
DDR2 SDRAM Package: 60ball FBGA  
133.35 x 30.00 mm form factor  
Lead-free Products are RoHS compliant  
ADDRESS TABLE  
# of  
DRAMs  
Refresh  
Method  
Density Organization Ranks  
SDRAMs  
# of row/bank/column Address  
512MB  
1GB  
64M x 72  
128M x 72  
128M x 72  
256M x 72  
1
2
1
2
64Mb x 8  
64Mb x 8  
128Mb x 4  
128Mb x 4  
9
14(A0~A13)/2(BA0~BA1)/10(A0~A9)  
14(A0~A13)/2(BA0~BA1)/10(A0~A9)  
8K / 64ms  
8K / 64ms  
18  
18  
36  
1GB  
14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms  
14(A0~A13)/2(BA0~BA1)/11(A0~A9,A11) 8K / 64ms  
2GB  
Rev. 1.1 / July 2006  
2
1240pin Registered DDR2 SDRAM DIMMs  
Input/Output Functional Description  
Symbol  
Type Polarity  
Pin Description  
Positive  
Edge  
CK0  
IN  
Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.  
Negative  
Edge  
CK0  
IN  
Negative line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.  
Active  
High  
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low.  
By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.  
CKE[1:0]  
IN  
Enables the associated DDR2 SDRAM command decoder when low and disables the command  
decoder when high. When the command decoder is disabled, new commands are ignored but  
previous operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1  
Active  
Low  
S[1:0]  
IN  
Active  
High  
ODT[1:0]  
IN  
On-Die Termination signals.  
Active  
Low  
When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define  
the command being entered.  
RAS, CAS, WE  
Vref  
IN  
Supply  
Supply  
Reference voltage for SSTL18 inputs  
Power supplies for the DDR2 SDRAM output buffers to provide improved noise immunity. For all  
current DDR2 unbuffered DIMM designs, VDDQ shares the same power plane as VDD pins.  
VDDQ  
BA[1:0]  
IN  
IN  
-
-
Selects which DDR2 SDRAM internal bank of four is activated.  
During a Bank Activate command cycle, Address input difines the row address(RA0~RA13)  
During a Read or Write command cycle, Address input defines the column address when sam-  
pled at the cross point of the rising edge of CK and falling edge of CK. In addition to the column  
address, AP is used to invoke autoprecharge operation at the end of the burst read or write  
cycle. If AP is high., autoprecharge is selected and BA0-BAn defines the bank to be precharged.  
If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in con-  
junction with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be pre-  
charged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used to define  
which bank to precharge.  
A[9:0],  
A10/AP  
A[13:11]  
DQ[63:0],  
CB[7:0]  
IN  
IN  
-
Data and Check Bit Input/Output pins.  
DM is an input mask signal for write data. Input data is masked when DM is sampled High coin-  
cident with that input data during a write access. DM is sampled on both edges of DQS.  
Although DM pins are input only, the DM loading matches the DQ and DQS loading.  
Active  
High  
DM[8:0]  
Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are  
tied to VDD/VDDQ planes on these modules.  
VDD,VSS  
Supply  
Positive  
Edge  
DQS[17:0]  
DQS[17:0]  
SA[2:0]  
I/O  
I/O  
IN  
Positive line of the differential data strobe for input and output data  
Negative line of the differential data strobe for input and output data  
Negative  
Edge  
These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD  
EEPROM address range.  
-
-
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may  
be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up.  
SDA  
I/O  
IN  
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected  
from SCL to VDDSPD to act as a pull up on the system board.  
SCL  
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane.  
EEPROM supply is operable from 1.7V to 3.6V.  
VDDSPD  
Supply  
The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When  
low, all register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will  
be set to low level (the PLL will remain synchronized with the input clock)  
RESET  
IN  
Par_In  
Err_Out  
TEST  
IN  
Parity bit for the Address and Control bus(“1. Odd, “0.Even)  
Parity error found in the Address and Control bus  
OUT  
Used by memory bus analysis tools(unused on memory DIMMs)  
Rev. 1.1 / July 2006  
3
1240pin Registered DDR2 SDRAM DIMMs  
PIN DESCRIPTION  
Pin  
CK0  
CK0  
Pin Description  
Pin  
ODT[1:0] On Die Termination Inputs  
VDDQ DQs Power Supply  
Pin Description  
Clock Input,positive line  
Clock input,negative line  
CKE0~CKE1 Clock Enable Input  
DQ0~DQ63 Data Input/Output  
CB0~CB7 Data check bits Input/Output  
DQS(0~8) Data strobes  
RAS  
CAS  
WE  
Row Address Strobe  
Column Address Strobe  
Write Enable  
DQS(0~8) Data strobes,negative line  
DM(0~8),  
S0,S1  
Chip Select Input  
Address input  
Data Maskes/Data strobes  
DQS(9~17)  
A0~A9,  
A11~A13  
DQS(9~17) Data strobes,negative line  
A10/AP  
Address input/Autoprecharge  
SDRAM Bank Address  
RFU  
NC  
Reserved for Future Use  
No Connect  
BA0,BA1  
Memory bus test tool  
(Not Connected and Not Usable on DIMMs)  
SCL  
Serial Presence Detect(SPD) Clock Input  
TEST  
SDA  
SA0~SA2  
Par_In  
SPD Data Input/Output  
VDD  
VDDQ  
VSS  
Core Power  
E2PROM Address Inputs  
I/O Power  
Parity bit for the Address and Control bus  
Parity error found on the Address  
Reset Enable  
Ground  
Err_Out  
RESET  
VREF  
Input/Output Reference  
SPD Power  
VDDSPD  
CB0~CB7 Data Check bit Inputs/Outputs  
PIN LOCATION  
Front Side  
1 pin  
64 pin 65 pin  
120 pin  
184 pin  
240 pin  
185 pin  
121 pin  
Back Side  
Rev. 1.1 / July 2006  
4
1240pin Registered DDR2 SDRAM DIMMs  
PIN ASSIGNMENT  
Pin  
1
Name  
VREF  
VSS  
Pin  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
Name  
VSS  
Pin  
81  
Name  
DQ33  
VSS  
Pin  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
Name  
VSS  
Pin  
161  
162  
163  
164  
165  
166  
167  
168  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
181  
182  
183  
184  
Name  
CB4  
Pin  
201  
202  
203  
Name  
VSS  
2
CB0  
82  
DQ4  
CB5  
DM4/DQS13  
DQS13  
VSS  
3
DQ0  
CB1  
83  
DQS4  
DQS4  
VSS  
DQ5  
VSS  
4
DQ1  
VSS  
84  
VSS  
DM8,DQS17 204  
5
VSS  
DQS8  
DQS8  
VSS  
85  
DM0/DQS9  
DQS9  
VSS  
DQS17  
VSS  
205  
206  
207  
208  
209  
210  
211  
212  
213  
214  
215  
216  
217  
218  
219  
220  
221  
222  
223  
224  
225  
226  
227  
228  
229  
230  
231  
232  
233  
234  
235  
236  
237  
238  
239  
240  
DQ38  
DQ39  
VSS  
6
DQS0  
DQS0  
VSS  
86  
DQ34  
DQ35  
VSS  
7
87  
CB6  
8
CB2  
88  
DQ6  
CB7  
DQ44  
DQ45  
VSS  
9
DQ2  
CB3  
89  
DQ40  
DQ41  
VSS  
DQ7  
VSS  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
DQ3  
VSS  
90  
VSS  
VDDQ  
NC,CKE1  
VDD  
A15,NC  
A14,NC  
VDDQ  
A12  
VSS  
VDDQ  
CKE0  
VDD  
BA2,NC  
NC,Err_Out  
VDDQ  
A11  
91  
DQ12  
DQ13  
VSS  
DM5/DQS14  
DQS14  
VSS  
DQ8  
92  
DQS5  
DQS5  
VSS  
DQ9  
93  
VSS  
94  
134 DM1/DQS10  
DQ46  
DQ47  
VSS  
DQS1  
DQS1  
VSS  
95  
DQ42  
DQ43  
VSS  
135  
136  
137  
138  
139  
140  
141  
142  
143  
144  
145  
DQS10  
VSS  
96  
97  
RFU  
A9  
DQ52  
DQ53  
VSS  
RESET  
NC  
A7  
98  
DQ48  
DQ49  
VSS  
RFU  
VDD  
A8  
VDD  
A5  
99  
VSS  
VSS  
100  
101  
102  
103  
104  
105  
106  
107  
108  
DQ14  
DQ15  
VSS  
A6  
RFU  
DQ10  
DQ11  
VSS  
A4  
SA2  
VDDQ  
A3  
RFU  
VDDQ  
A2  
NC(TEST)  
VSS  
VSS  
DQ20  
DQ21  
VSS  
A1  
DM6/DQS15  
NC,DQS15  
VSS  
DQ16  
DQ17  
VSS  
VDD  
Key  
DQS6  
DQS6  
VSS  
VDD  
Key  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
VSS  
146 DM2/DQS11  
185  
186  
187  
188  
189  
190  
191  
192  
193  
194  
195  
196  
197  
198  
199  
200  
CK0  
CK0  
DQ54  
DQ55  
VSS  
DQS2  
DQS2  
VSS  
VSS  
DQ50  
DQ51  
VSS  
147  
148  
149  
150  
151  
152  
153  
154  
DQS11  
VSS  
VDD  
VDD  
A0  
NC,Err_Out 109  
DQ22  
DQ23  
VSS  
DQ60  
DQ61  
VSS  
DQ18  
DQ19  
VSS  
VDD  
A10/AP  
BA0  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
DQ56  
DQ57  
VSS  
VDD  
BA1  
DQ28  
DQ29  
VSS  
VDDQ  
RAS  
DM7/DQS16  
NC,DQS16  
VSS  
DQ24  
DQ25  
VSS  
VDDQ  
WE  
DQS7  
DQS7  
VSS  
S0  
CAS  
155 DM3/DQS12  
VDDQ  
ODT0  
A13,NC  
VDD  
VSS  
DQ62  
DQ63  
VSS  
DQS3  
DQS3  
VSS  
VDDQ  
NC, S1  
NC, ODT1  
VDDQ  
VSS  
DQ58  
DQ59  
VSS  
156  
157  
158  
159  
160  
DQS12  
VSS  
DQ30  
DQ31  
VSS  
VDDSPD  
SA0  
DQ26  
DQ27  
SDA  
SCL  
DQ36  
DQ37  
SA1  
DQ32  
NC= No Connect, RFU= Reserved for Future Use.  
Note:  
1. RESET(Pin 18) is connected to both OE of PLL and Reset of register.  
2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity.  
3. The Test pin(Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules(DIMMs)  
Rev. 1.1 / July 2006  
5
1240pin Registered DDR2 SDRAM DIMMs  
FUNCTIONAL BLOCK DIAGRAM  
512MB(64Mbx72) : HYMP564R72BP8 / HYMP564P72BP8  
/RS0  
DQS4  
DQS0  
/DQS0  
/DQS4  
DM4,DQS13  
DM0,DQS9  
/DQS13  
/DQS9  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
DQS /DQS  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 1  
I/O 2  
I/O 1  
I/O 2  
D4  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
D0  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS5  
DQS1  
/DQS5  
/DQS1  
DM5,DQS14  
DM1,DQS10  
/DQS10  
/DQS14  
DM  
RDQS /RDQS  
I/O 0  
NU  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
/CS  
DQS /DQS  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
DQ8  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
I/O 1  
I/O 2  
I/O 1  
I/O 2  
D5  
D1  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS6  
/DQS6  
DQS2  
/DQS2  
DM6,DQS15  
/DQS15  
DM2,DQS11  
/DQS11  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
DQS /DQS  
DQS /DQS  
DQS /DQS  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
I/O 1  
I/O 2  
I/O 1  
I/O 2  
D6  
D2  
I/O 3  
I/O 4  
I/O 5  
I/O 3  
I/O 4  
I/O 5  
VDD SPD  
Serial PD  
DO-D8  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
VDD /  
VDDQ  
DQS7  
/DQS7  
DQS3  
/DQS3  
VREF  
VSS  
DO-D8  
DO-D8  
DM7,DQS16  
/DQS16  
DM3,DQS12  
/DQS12  
DM  
RDQS /RDQS  
I/O 0  
NU  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
/CS  
DQS /DQS  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
Serial PD  
U0  
I/O 1  
I/O 2  
I/O 1  
I/O 2  
SDA  
SCL  
SCL  
WP  
SDA  
D3  
D7  
I/O 3  
I/O 4  
I/O 5  
I/O 3  
I/O 4  
I/O 5  
A0  
A1  
A2  
I/O 6  
I/O 7  
I/O 6  
I/O 7  
SA0 SA1 SA2  
DQS8  
/DQS8  
Notes :  
1. Register values are 22 Ohms.  
DM8DQS17  
/DQS17  
DM  
RDQS /RDQS  
I/O 0  
NU  
/CS  
Signals for Address and Command Parity Function  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
Register  
V
SS  
C0  
C1  
I/O 1  
I/O 2  
V
SS  
PAR_IN  
D8  
PAR_IN  
PPO  
/QERR  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
/Err-Out  
100K ohms  
The resistors on Par_In, A13, A14, A15, BA2 and  
the signal line of Err_Out refer to the section:  
Register Options for Unused Address inputs”  
R
/CS0*  
/RS0 to /CS ==> /CS: SDRAMs D0 to D8  
RBA0 to RBA1 ==> BA0 to BA1: SDRAMs D0 to D8  
/RA0 to RA13 ==> A0 to A13: SDRAMs D0 to D8  
/RRAS ==>/RAS: SDRAMs D0 to D8  
E
G
I
BA0 to BA1  
A0 to A13  
PCK0 to PCK6, PCK8,PCK9 ==> CK: SDRAMs D0 toD8  
/PCK0 to /PCK6, /PCK8, /PCK9 ==> /CK: SDRAMs D0 toD8  
CK0  
P
L
L
S
T
E
R
/RAS  
/CK0  
/CAS  
/RCAS ==>/CAS: SDRAMs D0 to D8  
PCK7 ==> CK: Register  
/PCK7 ==> /CK: Register  
CKE0  
RCKE0 ==> CKE: SDRAMs D0 to D8  
/RWE ==> /WE: SDRAMs D0 to D8  
/WE  
/RESET  
OE  
ODT0  
RODT0 ==> ODT0: SDRAMs D0 to D8  
/RESET  
PCK7  
* : /S0 connects to D/CS and VDD connects to /CSR on register.  
/RST  
/PCK7  
Rev. 1.1 / July 2006  
6
1240pin Registered DDR2 SDRAM DIMMs  
FUNCTIONAL BLOCK DIAGRAM  
1GB(128Mbx72) : HYMP512R72BP8 / HYMP512P72BP8  
/RS1  
/RS0  
DQS0  
/ DQS0  
DQS4  
/ DQS4  
DM0, DQS9  
DM4, DQS13  
/DQS9  
/DQS13  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
NU  
/ RDQS  
DQS / DQS  
NU  
/ RDQS  
DQS / DQS  
DM  
RDQS  
I/ O 0  
NU  
/ RDQS  
DM  
RDQS  
I/ O 0  
NU  
/ RDQS  
/CS  
/CS  
DQS / DQS  
DQS / DQS  
DQS / DQS  
DQS / DQS  
DQS / DQS  
DQS / DQS  
DQS / DQS  
DQS / DQS  
/CS  
/CS  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ32  
DQ33  
DQ34  
DQ35  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
D0  
D9  
D4  
D13  
DQ36  
DQ37  
DQ38  
DQ39  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
DQ1  
/ DQ1  
DM1,DQS10  
/DQS10  
DQS5  
/ DQS5  
DM5, DQS14  
/DQS14  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DQS / DQS  
NU  
/ RDQS  
DQS / DQS  
NU  
/ RDQS  
/CS  
/CS  
NU /CS  
/ RDQS  
NU /CS  
/ RDQS  
DQ8  
DQ9  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
DQ10  
DQ11  
D1  
D5  
D14  
D15  
D16  
D10  
DQ12  
DQ13  
DQ14  
DQ15  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
DQS6  
/ DQS6  
DM6, DQS15  
DQS2  
/ DQS2  
2
DM ,DQS11  
/DQS15  
/DQS11  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DQS / DQS  
NU  
/ RDQS  
DQS / DQS  
NU /CS  
/ RDQS  
NU /CS  
/ RDQS  
/CS  
/CS  
NU  
/ RDQS  
DQ16  
DQ17  
DQ18  
DQ19  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
D6  
D2  
D11  
DQ20  
DQ21  
DQ22  
DQ23  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
DQ54  
DQ55  
DQS7  
DQS3  
/ DQS3  
DM3,DQS12  
/ DQS7  
DM7, DQS16  
/DQS16  
/DQS12  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
DQS / DQS  
NU  
/ RDQS  
DQS / DQS  
/CS  
/CS  
NU /CS  
/ RDQS  
NU /CS  
/ RDQS  
NU  
/ RDQS  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ56  
DQ57  
DQ58  
DQ59  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
D3  
D12  
D7  
DQ60  
DQ61  
DQ62  
DQ63  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
DQS8  
/ DQS8  
DM8,DQS17  
Serial  
PD  
VDD SPD  
SDA  
SCL  
SCL  
WP  
Serial PD  
VDD/VDDQ  
DO-D17  
DO-D17  
DO-D17  
/DQS17  
DM  
RDQS  
I/ O 0  
DM  
RDQS  
I/ O 0  
A0  
A1  
NU  
/ RDQS  
DQS / DQS  
NU  
/ RDQS  
DQS / DQS  
A1  
/CS  
/CS  
VREF  
SA0  
SA1  
SA2  
CB0  
CB1  
CB2  
CB3  
VSS  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
I/ O 1  
I/ O 2  
I/ O 3  
I/ O 4  
I/ O 5  
CK0  
PCK0 to PCK6, PCK8,PCK9 = > CK : SDRAMx D0-D17  
D8  
D17  
P
L
L
CB4  
CB5  
CB6  
CB7  
/CK0  
/PCK0 to /PCK6, /PCK8,/PCK9 = > /CK : SDRAMx D0-D17  
PCK7  
=
>
CK: Register  
I/ O 6  
I/ O 7  
I/ O 6  
I/ O 7  
/RESET  
OE  
/PCK7  
= > /CK: Register  
1:2  
R
E
G
I
/S0  
/S1  
/RS0 to /CS : SDRAMs D0 - D8  
/RS1 to /CS : SDRAMs D9 - D17  
Signals for Address and Command Parity Function  
Register  
A
Register  
B
V
V
V
V
SS  
DD  
C0  
C0  
C1  
BA0 to BA1  
DD  
DD  
/RBA0 to RBA1 = > BA0 -BA1 : SDRAMs D0-D17  
/RA0 to RA12 = > A0 -A12 : SDRAMs D0-D17  
/RRAS = > /RAS: SDRAMs D0-D17  
/RCAS = > /CAS: SDRAMs D0-D17  
/RWE = > /WE: SDRAMs D0-D17  
C1  
A0 to A13  
/RAS  
PAR_IN  
PAR_IN  
PAR_IN  
PPO  
PPO  
/QERR  
S
T
/QERR  
/Err-Out  
/CAS  
100K ohms  
/WE  
E
R
CKE0  
CKE1  
ODT0  
ODT1  
RCKE0 = > CKE0: SDRAMs D0-D8  
RCKE1 = > CKE1: SDRAMs D9-D17  
RODT0 = > ODT0: SDRAMs D0-D8  
RODT1 = > ODT1: SDRAMs D9-D17  
The resistors on Par_In, A13, A14, A15, BA2 and  
the signal line of Err_Out refer to the section:  
Register Options for Unused Address inputs”  
Notes:  
1. Register values are 22 Ohms +/- 5%.  
2. /RS0 and /RS1 alternate between the back and front sides of the DIMM  
/ RST  
/RESET  
PCK7  
/PCK7  
Rev. 1.1 / July 2006  
7
1240pin Registered DDR2 SDRAM DIMMs  
FUNCTIONAL BLOCK DIAGRAM  
1GB(64Mbx72) : HYMP512R72BP4 / HYMP512P72BP4  
VSS  
/RS0  
/DQS0  
DQS0  
/ DQS9  
DQS9  
Serial PD  
U0  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DQS /DQS /CS  
I/O0  
DQS /DQS /CS  
I/O0  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
SDA  
SCL  
SCL  
SDA  
I/O1  
D0  
I/O2  
I/O1  
D9  
I/O2  
W
P
A0  
A1  
A2  
I/O3  
I/O3  
/DQS1  
DQS1  
/DQS10  
DQS10  
SA0 SA1 SA2  
DQS /DQS /CS  
I/O0  
I/O1  
D1  
I/O2  
DQS /DQS /CS  
I/O0  
DQ8  
DQ12  
DQ13  
DQ14  
DQ15  
Serial  
VDD SPD  
VDD/VDDQ  
VREF  
DQ9  
I/O1  
PD  
D10  
I/O2  
DQ10  
DQ11  
DO-D17  
I/O3  
I/O3  
/DQS2  
DQS2  
/DQS11  
DQS11  
DO-D17  
DO-D17  
DQS /DQS /CS  
I/O0  
I/O1  
D2  
I/O2  
DQS /DQS /CS  
I/O0  
VSS  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
I/O1  
D11  
I/O2  
DQ22  
I/O3  
I/O3  
DQ23  
/DQS3  
DQS3  
/ DQS12  
DQS12  
DQS /DQS /CS  
I/O0  
DQS /DQS /CS  
I/O0  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
I/O1  
D3  
I/O2  
I/O1  
D12  
I/O2  
I/O3  
I/O3  
/DQS4  
DQS4  
/ DQS13  
DQS13  
DQS /DQS /CS  
I/O0  
I/O1  
D4  
I/O2  
DQS /DQS /CS  
I/O0  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O1  
D13  
I/O2  
I/O3  
I/O3  
/DQS5  
DQS5  
/ DQS14  
DQS14  
DQS /DQS /CS  
I/O0  
I/O1  
D5  
I/O2  
DQS /DQS /CS  
I/O0  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
I/O1  
D14  
I/O2  
DQ46  
I/O3  
I/O3  
DQ47  
/DQS6  
DQS6  
/DQS15  
DQS15  
DQS /DQS /CS  
I/O0  
I/O1  
D6  
I/O2  
DQS /DQS /CS  
I/O0  
DQ52  
DQ53  
DQ54  
DQ55  
DQ48  
DQ49  
I/O1  
I/O2  
D15  
DQ50  
I/O3  
I/O3  
DQ51  
/DQS7  
DQS7  
/DQS16  
DQS16  
CK0  
PCK0 to PCK6, PCK8,PCK9 = > CK : SDRAMx D0-D17  
/PCK0 to /PCK6, /PCK8,/PCK9 = > /CK : SDRAMx D0-D17  
P
L
L
DQS /DQS /CS  
I/O0  
I/O1  
D7  
I/O2  
DQS /DQS /CS  
I/O0  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
/CK0  
I/O1  
D16  
I/O2  
PCK7 = > CK: Register  
/PCK7 = > /CK: Register  
I/O3  
I/O3  
/DQS8  
DQS8  
/DQS17  
DQS17  
/RESET  
OE  
DQS /DQS /CS  
I/O0  
I/O1  
D8  
I/O2  
DQS /DQS /CS  
I/O0  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
I/O1  
D17  
I/O2  
Notes:  
1. Resistor values are 22 Ohms +/- 5%.  
I/O3  
I/O3  
R
E
G
I
S
T
E
R
/CS0*  
Signals for Address and Command Parity Function  
/RS0 to /CS ==> /CS: SDRAMs D0 to D17  
RBA0 to RBA1 ==> BA0 to BA1: SDRAMs D0 to D17  
/RA0 to RA13 ==> A0 to A13: SDRAMs D0 to D17  
/RRAS ==>/RAS: SDRAMs D0 to D17  
BA0 to BA1  
A0 to A13  
Register A  
Register B  
V
V
V
V
SS  
DD  
C0  
C0  
DD  
DD  
C1  
C1  
PAR_IN  
PAR_IN  
PAR_IN  
/RAS  
PPO  
PPO  
/QERR  
/QERR  
/Err-Out  
/CAS  
/RCAS ==>/CAS: SDRAMs D0 to D17  
100K ohms  
CKE0  
RCKE0 ==> CKE: SDRAMs D0 to D17  
/RWE ==> /WE: SDRAMs D0 to D17  
The resistors on Par_In, A13, A14, A15, BA2 and  
the signal line of Err_Out refer to the section:  
Register Options for Unused Address inputs”  
/WE  
ODT0  
RODT0 ==> ODT0: SDRAMs D0 to D17  
/RESET  
PCK7  
/S0 connects to D/CS of Register1 and /CSR of Register2. /CSR of register and D/CS of register2 connects to VDD.  
/RST  
/PCK7  
*
** /RESET,PCK7 connect to both Registers. Other signals connect to one of two Registers. /S1,CKE1 and ODT1 are NC.  
Rev. 1.1 / July 2006  
8
1240pin Registered DDR2 SDRAM DIMMs  
FUNCTIONAL BLOCK DIAGRAM  
2GB(256Mbx72) : HYMP525R72BP4 / HYMP525P72BP4  
VSS  
/RS0  
/RS1  
Serial PD  
U0  
SDA  
SCL  
SCL  
SDA  
DQS9  
/DQS9  
DQS0  
/DQS0  
W
P
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
DM /CS DQS /DQS  
I O0  
A0  
A1  
A2  
I/O0  
I/O1  
I O0  
I/O1  
I/O2  
I/O3  
I/O0  
I/O1  
DQ4  
DQ5  
DQ6  
DQ7  
DQ0  
DQ1  
DQ2  
DQ3  
I/O1  
D9  
D27  
D0  
D18  
I/O2  
I/O2  
I/O2  
SA0 SA1 SA2  
I/O3  
I/O3  
I/O3  
DQS10  
DQS1  
/ DQS10  
/DQS1  
DM /C S DQS /D Q S  
Serial  
PD  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
VDD SPD  
VDD/VDDQ  
VREF  
I/O0  
I/O1  
DQ12  
DQ13  
DQ14  
DQ15  
I/O0  
I/O1  
DQ8  
DQ9  
DQ10  
I/O1  
I/O1  
D10  
D28  
D1  
D19  
I/O2  
I/O2  
I/O2  
I/O2  
DO to D35  
I/O3  
I/O3  
I/O3  
I/O3  
DQ11  
DO to D35  
DO to D35  
DQS11  
/ DQS11  
DQS2  
VSS  
/DQS2  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
DQ20  
DQ21  
DQ22  
DQ23  
I/O0  
I/O1  
DQ16  
DQ17  
DQ18  
DQ19  
I/O0  
I/O1  
I/O1  
I/O1  
PCK0 to PCK6, PCK8,PCK9  
= > CK : SDRAMs D0-D35  
D11  
D29  
D2  
D20  
I/O2  
I/O2  
I/O2  
I/O2  
CK0  
P
L
L
I/O3  
I/O3  
I/O3  
I/O3  
/PCK0 to /PCK6, /PCK8,/PCK9  
= > /CK : SDRAMs D0-D35  
DQS12  
DQS3  
/CK0  
/ DQS12  
/DQS3  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
PCK7 = > CK: Register  
/PCK7 = > /CK: Register  
DQ28  
DQ29  
DQ30  
DQ31  
I/O0  
I/O1  
DQ24  
DQ25  
DQ26  
DQ27  
I/O0  
I/O1  
I/O1  
I/O1  
D12  
D30  
D3  
D21  
I/O2  
I/O2  
I/O2  
I/O2  
/RESET  
OE  
I/O3  
I/O3  
I/O3  
I/O3  
DQS17  
DQS8  
/ DQS17  
/DQS8  
Signals for Address and Command  
Parity Function  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
CB4  
CB5  
CB6  
CB7  
I/O0  
I/O1  
CB0  
CB1  
CB2  
CB3  
I/O0  
I/O1  
I/O1  
I/O1  
Register A1  
VSS  
VDD  
C0  
D17  
D35  
D8  
D26  
I/O2  
I/O2  
I/O2  
I/O2  
C1  
I/O3  
I/O3  
I/O3  
I/O3  
PAR_IN  
PPO  
/QERR  
/RS0  
/RS1  
DQS13  
/ DQS13  
DQS4  
/DQS4  
Register A1  
VDD  
VDD  
C0  
C1  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
DQ36  
DQ37  
DQ38  
DQ39  
I/O0  
I/O1  
DQ32  
DQ33  
DQ34  
DQ35  
I/O0  
I/O1  
PAR_IN  
PPO  
I/O1  
I/O1  
/QERR  
D13  
D31  
D4  
D22  
I/O2  
I/O2  
I/O2  
I/O2  
/Err_Out  
I/O3  
I/O3  
I/O3  
I/O3  
DQS14  
/ DQS14  
DQS5  
/DQS5  
Register A1  
VSS  
VDD  
C0  
C1  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
PAR_IN  
DQ44  
DQ45  
DQ46  
DQ47  
I/O0  
I/O1  
DQ40  
DQ41  
DQ42  
DQ43  
I/O0  
I/O1  
PPO  
I/O1  
I/O1  
/QERR  
D14  
D32  
D5  
D23  
I/O2  
I/O2  
I/O2  
I/O2  
I/O3  
I/O3  
I/O3  
I/O3  
Register A1  
VDD  
VDD  
C0  
C1  
DQS15  
/ DQS15  
DQS6  
/DQS6  
PAR_IN  
PPO  
/QERR  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
DQ52  
DQ53  
DQ54  
DQ55  
I/O0  
I/O1  
DQ48  
DQ49  
DQ50  
DQ51  
I/O0  
I/O1  
I/O1  
I/O1  
D15  
D33  
D6  
D24  
I/O2  
I/O2  
Register A1 and A2 and A2 share the a part of  
Addr/Cmd input signal set.  
I/O2  
I/O2  
I/O3  
I/O3  
I/O3  
I/O3  
DQS9  
/DQS9  
DQS7  
/DQS7  
Register B1 and B2 share the rest part of  
Addr/Cmd input signal set.  
DM /C S DQS /D Q S  
DM /C S DQS /D Q S  
DM /CS DQS / DQS  
I O0  
DM /CS DQS / DQS  
I O0  
I/O0  
I/O1  
I/O0  
I/O1  
DQ60  
DQ61  
DQ62  
DQ63  
DQ56  
DQ57  
DQ58  
DQ59  
The resistors on Par_In, A13, A14, A15, BA2 and  
the signal line of Err_Out refer to the section:  
Register Options for Unused Address inputs”  
I/O1  
I/O1  
D16  
D34  
D7  
D25  
I/O2  
I/O2  
I/O2  
I/O2  
I/O3  
I/O3  
I/O3  
I/O3  
1:2  
R
E
G
I
/S0*  
/S1*  
/RS0 to /CS : SDRAMs D0-D17  
/RS1 to /CS : SDRAMs D18-D35  
BA0-BA1***  
/RBA0-RBA1 = > BA0 -BA1 : SDRAMs D0-D35  
/RA0-RA12 = > A0 -A12 : SDRAMs D0-D35  
/RRAS = > /RAS: SDRAMs D0-D35  
/RCAS = > /CAS: SDRAMs D0-D35  
/RWE = > /WE: SDRAMs D0-D35  
A0-A13***  
/RAS  
S
T
/CAS  
/WE  
E
R
CKE0  
CKE1  
ODT0  
ODT1  
RCKE0 = > CKE0: SDRAMs D0-D17  
RCKE1 = > CKE1: SDRAMs D18-D35  
RODT0 = > ODT0: SDRAMs D0-D17  
RODT1 = > ODT1: SDRAMs D18-D35  
Notes:  
1. DQ-to-I/O wiring may be changed within a nibble.  
2. Unless otherwise noted, resistor values are 22 Ohms +/- 5%.  
3. /RS0 and /RS1 altemate between the bottom and surface sides of the DIMM.  
/ RST  
/RESET**  
PCK7**  
/PCK7**  
*
/S0 connects to D/CS0 and /S1 connects to CSR on a pair of Registers. /S1 connects to D/CS and /S0 connects to /CSR on another pair of Registers.  
** /RESET,PCK7 and /PCK7 connect to both Registers. Other signals connect to two Registers.  
*** A13-15, BA2 have the optional pull down resistors(100K ohms), which is not indicated here.  
Rev. 1.1 / July 2006  
9
1240pin Registered DDR2 SDRAM DIMMs  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Value  
Unit  
Note  
VDD  
VDDL  
- 1.0 V ~ 2.3 V  
-0.5V ~ 2.3 V  
- 0.5 V ~ 2.3 V  
- 0.5 V ~ 2.3 V  
-50 ~ +100  
V
V
V
V
1
1
1
1
1
1
Voltage on VDD pin relative to Vss  
Voltage on VDDL pin relative to Vss  
Voltage on VDDQ pin relative to Vss  
VDDQ  
VIN, VOUT  
TSTG  
Voltage on any pin relative to Vss  
Storage Temperature  
oC  
HSTG  
Storage Humidity(without condensation)  
5 to 95  
%
Note :  
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device  
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con  
ditions for extended periods may affect reliablility.  
OPERATING CONDITIONS  
Parameter  
Symbol  
TOPR  
Rating  
0 ~ +55  
Units  
oC  
Notes  
DIMM Operating temperature(ambient)  
PBAR  
TCASE  
DIMM Barometric Pressure(operating & storage)  
105 to 69  
0 ~+95  
K Pascal  
1
2
DRAM Component Case Temperature Range  
oC  
Note :  
1. Up to 9850 ft.  
2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to  
tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.  
DC OPERATING CONDITIONS (SSTL_1.8)  
Parameter  
Symbol  
VDD  
Min  
Max  
Unit  
V
Note  
1.7  
1.7  
1.9  
1.9  
VDDL  
Power Supply Voltage  
V
VDDQ  
VREF  
1.7  
1.9  
V
1
2
0.49 x VDDQ  
0.51 x VDDQ  
Input Reference Voltage  
EEPROM Supply Voltage  
V
VDDSPD  
VTT  
1.7  
3.6  
V
VREF+0.04  
VREF-0.04  
V
3
Termination Voltage  
Input leakage current; any input 0V VIN VDD;  
all other balls not under test = 0V)  
Output leakage current; 0V VOUT VDDQ;  
DQ and ODT disabled  
II  
-2  
-5  
2
5
uA  
uA  
IOZ  
Note :  
1. VDDQ must be less than or equal to VDD  
.
2. Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc)  
3. VTT of transmitting device must track VREF of receiving device.  
Rev. 1.1 / July 2006  
10  
1240pin Registered DDR2 SDRAM DIMMs  
INPUT DC LOGIC LEVEL  
Parameter  
Input High Voltage  
Input Low Voltage  
Symbol  
Min  
VREF + 0.125  
-0.30  
Max  
Unit  
V
Notes  
VIH(DC)  
VIL(DC)  
VDDQ + 0.3  
VREF - 0.125  
V
INPUT AC LOGIC LEVEL  
DDR2 400/533  
DDR2 667/800  
Notes  
Parameter  
Symbol  
Unit  
Min  
Max  
Min  
Max  
AC Input logic High  
AC Input logic Low  
VIH(AC)  
VIL(AC)  
V
V
VREF + 0.250  
-
-
VREF + 0.200  
-
-
VREF - 0.250  
VREF - 0.200  
AC INPUT TEST CONDITIONS  
Symbol  
VREF  
Condition  
Input reference voltage  
Value  
Units  
Notes  
0.5 * VDDQ  
V
1
VSWING(MAX)  
SLEW  
Input signal maximum peak to peak swing  
Input signal minimum slew rate  
1.0  
1.0  
V
1
V/ns  
2, 3  
Notes:  
1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device  
under test.  
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(ac) min for rising edges  
and the range from VREF to VIL(ac) max for falling edges as shown in the below figure.  
3. AC timings are referenced with input waveforms switching from VIL(ac) to VIH(ac) on the positive transitions  
and VIH(ac) to VIL(ac) on the negative transitions.  
V
V
V
V
V
V
V
DDQ  
IH(ac)  
IH(dc)  
REF  
min  
min  
V
SWING(MAX)  
max  
max  
IL(dc)  
IL(ac)  
SS  
delta TF  
delta TR  
Rising Slew =  
V
min - V  
REF  
V
-
V
max  
IL(ac)  
IH(ac)  
REF  
Falling Slew =  
delta TF  
delta TR  
< Figure : AC Input Test Signal Waveform>  
Rev. 1.1 / July 2006  
11  
1240pin Registered DDR2 SDRAM DIMMs  
Differential Input AC logic Level  
Symbol  
Parameter  
Min.  
Max.  
Units  
Note  
VID (ac)  
0.5  
VDDQ + 0.6  
V
1
ac differential input voltage  
ac differential cross point voltage  
VIX (ac)  
0.5 * VDDQ - 0.175  
0.5 * VDDQ + 0.175  
V
2
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,  
LDQS, UDQS and UDQS.  
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as  
CK, DQS, LDQS or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The mini-  
mum value is equal to VIH(DC) - VIL(DC).  
V
DDQ  
V
TR  
Crossing point  
V
ID  
V
V
IX or OX  
V
CP  
V
SSQ  
< Differential signal levels >  
Notes:  
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal  
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).  
The minimum value is equal to V IH(AC) - VIL(AC).  
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to  
track variations in VDDQ . VIX(AC) indicates the voltage at whitch differential input signals must cross.  
DIFFERENTIAL AC OUTPUT PARAMETERS  
Symbol  
Parameter  
Min.  
Max.  
Units  
Note  
VOX (ac)  
0.5 * VDDQ - 0.125  
0.5 * VDDQ + 0.125  
V
1
ac differential cross point voltage  
Note:  
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to  
track variations in VDDQ . VOX(AC) indicates the voltage at whitch differential output signals must cross.  
Rev. 1.1 / July 2006  
12  
1240pin Registered DDR2 SDRAM DIMMs  
OUTPUT BUFFER LEVELS  
OUTPUT AC TEST CONDITIONS  
Symbol  
Parameter  
SSTL_18  
Units  
Notes  
VOTR  
Output Timing Measurement Reference Level  
0.5 * VDDQ  
V
1
Notes:  
1. The VDDQ of the device under test is referenced.  
OUTPUT DC CURRENT DRIVE  
Symbol  
IOH(dc)  
IOL(dc)  
Parameter  
SSTl_18  
Units  
Notes  
Output Minimum Source DC Current  
Output Minimum Sink DC Current  
- 13.4  
13.4  
mA  
mA  
1, 3, 4  
2, 3, 4  
Notes:  
1. VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and  
VDDQ - 280 mV.  
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.  
3. The dc value of VREF applied to the receiving device is set to VTT  
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device  
drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an  
SSTL_18 receiver.  
The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define  
a convenient driver current for measurement.  
Rev. 1.1 / July 2006  
13  
1240pin Registered DDR2 SDRAM DIMMs  
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25℃. f=1MHz )  
512MB : HYMP564R72BP8 / HYMP564P72BP8  
Symbol  
Min  
Max  
Unit  
Pin  
pF  
pF  
pF  
pF  
pF  
CK0, CK0  
CKE, ODT  
CS  
CCK  
CI1  
CI2  
CI3  
CIO  
7
8
8
8
6
11  
12  
12  
12  
9
Address, RAS, CAS, WE  
DQ, DM, DQS, DQS  
1GB : HYMP512R72BP8 / HYMP512P72BP8  
Symbol  
Min  
Max  
Unit  
Pin  
pF  
pF  
pF  
pF  
pF  
CK0, CK0  
CKE, ODT  
CS  
CCK  
CI1  
CI2  
7
8
11  
12  
15  
12  
13  
10  
8
Address, RAS, CAS, WE  
DQ, DM, DQS, DQS  
CI3  
CIO  
8
1GB : HYMP512R72BP4 / HYMP512P72BP4  
Symbol  
Min  
Max  
Unit  
Pin  
pF  
pF  
pF  
pF  
pF  
CK0, CK0  
CKE, ODT  
CS  
CCK  
CI1  
CI2  
CI3  
CIO  
7
8
11  
12  
15  
12  
9
10  
8
Address, RAS, CAS, WE  
DQ, DM, DQS, DQS  
6
2GB : HYMP525R72BP4 / HYMP525P72BP4  
Symbol  
Min  
Max  
Unit  
Pin  
pF  
pF  
pF  
pF  
pF  
CK0, CK0  
CKE, ODT  
CS  
CCK  
CI1  
9.5  
10.5  
10.5  
10.5  
17  
10.4  
16  
CI2  
CI3  
CIO  
16  
Address, RAS, CAS, WE  
DQ, DM, DQS, DQS  
16  
21  
Note :  
1. Pins not under test are tied to GND.  
2. These value are guaranteed by design and tested on a sample basis only.  
Rev. 1.1 / July 2006  
14  
1240pin Registered DDR2 SDRAM DIMMs  
o
IDD SPECIFICATIONS (T  
: 0 to 95 C)  
CASE  
512MB, 64M x 72 Registered DIMM : HYMP564R72BP8 / HYMP564P72BP8  
Symbol  
IDD0  
E3 (400@CL3)  
C4 (533@CL4)  
1370  
Y5 (667@CL5)  
S5 (800@CL5)  
Unit  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Notes  
1370  
1460  
722  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
IDD1  
1460  
IDD2P  
IDD2Q  
IDD2N  
IDD3P-F  
IDD3P-S  
IDD3N  
IDD4W  
IDD4R  
IDD5  
722  
920  
1010  
965  
1055  
920  
920  
758  
758  
1100  
1910  
1820  
2090  
495  
1145  
2180  
2000  
2180  
1
IDD6  
495  
IDD7  
2630  
2630  
1GB, 128M x 72 Registered DIMM : HYMP512R72BP8 / HYMP512P72BP8  
Symbol  
IDD0  
E3 (400@CL3) C4 (533@CL4) Y5 (667@CL5) S5 (800@CL5)  
Unit  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Notes  
1820  
1910  
794  
1865  
1955  
794  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
IDD1  
IDD2P  
IDD2Q  
IDD2N  
IDD3P-F  
IDD3P-S  
IDD3N  
IDD4W  
IDD4R  
IDD5  
1190  
1280  
1190  
866  
1370  
1460  
1190  
866  
1550  
2360  
2270  
2540  
540  
1640  
2675  
2495  
2675  
540  
1
IDD6  
IDD7  
3080  
3125  
Notes :  
1. IDD6 current alues are guaranted up to Tcase of 85oC max.  
Rev. 1.1 / July 2006  
15  
1240pin Registered DDR2 SDRAM DIMMs  
1GB, 128M x 72 Registered DIMM : HYMP512R72BP4 / HYMP512P72BP4  
Symbol  
IDD0  
E3 (400@CL3) C4 (533@CL4) Y5 (667@CL5) S5 (800@CL5)  
Unit  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Notes  
2090  
2270  
794  
2090  
2270  
794  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
IDD1  
IDD2P  
IDD2Q  
IDD2N  
IDD3P-F  
IDD3P-S  
IDD3N  
IDD4W  
IDD4R  
IDD5  
1190  
1280  
1190  
866  
1370  
1460  
1190  
866  
1550  
3170  
2990  
3530  
540  
1640  
3710  
3350  
3710  
540  
1
IDD6  
IDD7  
4610  
4610  
2GB, 256M x 72 Registered DIMM : HYMP525R72BP4/HYMP525P72BP4  
Symbol  
IDD0  
E3 (400@CL3) C4 (533@CL4) Y5 (667@CL5) S5 (800@CL5)  
Unit  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
Notes  
2990  
3170  
938  
3080  
3260  
938  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
IDD1  
IDD2P  
IDD2Q  
IDD2N  
IDD3P-F  
IDD3P-S  
IDD3N  
IDD4W  
IDD4R  
IDD5  
1730  
1910  
1730  
1082  
2450  
4070  
3890  
4430  
630  
2090  
2270  
1730  
1082  
2630  
4700  
4340  
4700  
630  
1
IDD6  
IDD7  
5510  
5600  
Note :  
1. IDD6 current alues are guaranted up to Tcase of 85max.  
Rev. 1.1 / July 2006  
16  
1240pin Registered DDR2 SDRAM DIMMs  
IDD Meauarement Conditions  
Symbol  
Conditions  
Units  
t
t
t
t
t
t
Operating one bank active-precharge current; CK = CK(IDD), RC = RC(IDD), RAS = RAS-  
min(IDD);CKE is HIGH, CS is HIGH between valid commands;Address bus inputs are SWITCHING;Data bus  
inputs are SWITCHING  
IDD0  
IDD1  
mA  
t
Operating one bank active-read-precharge curren ; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0; CK =  
t
t
t
t
t
t
t
CK(IDD), RC = RC (IDD), RAS = RASmin(IDD), RCD = RCD(IDD) ; CKE is HIGH, CS is HIGH between valid  
commands ; Address bus inputs are SWITCHING ; Data pattern is same as IDD4W  
mA  
t
t
Precharge power-down current ; All banks idle ; CK = CK(IDD) ; CKE is LOW ; Other control and address  
IDD2P  
IDD2Q  
IDD2N  
mA  
mA  
mA  
bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge quiet standby current;All banks idle; CK = CK(IDD);CKE is HIGH, CS is HIGH; Other control and  
address bus inputs are STABLE; Data bus inputs are FLOATING  
t
t
Precharge standby current; All banks idle; CK = CK(IDD); CKE is HIGH, CS is HIGH; Other control and  
address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
t
t
mA  
mA  
Active power-down current; All banks open; CK = CK(IDD); CKE is LOW;  
Fast PDN Exit MRS(12) = 0  
Slow PDN Exit MRS(12) = 1  
IDD3P  
IDD3N  
IDD4W  
IDD4R  
Other control and address bus inputs are STABLE; Data bus inputs are FLOAT-  
ING  
t
t
t
t
t
t
Active standby current; All banks open; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is  
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus  
inputs are SWITCHING  
mA  
mA  
mA  
t
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; CK  
t
t
t
t
t
= CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between valid commands;  
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING  
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),  
t
t
t
t
t
t
AL = 0; CK = CK(IDD), RAS = RASmax(IDD), RP = RP(IDD); CKE is HIGH, CS is HIGH between valid com-  
mands; Address bus inputs are SWITCHING;; Data pattern is same as IDD4W  
t
t
t
Burst refresh current; CK = CK(IDD); Refresh command at every RFC(IDD) interval; CKE is HIGH, CS is  
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are  
SWITCHING  
IDD5B  
mA  
Self refresh current; CK and CK at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data  
bus inputs are FLOATING. IDD6 current values are guaranted up to Tcase of 85max.  
IDD6  
mA  
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD),  
t
t
t
t
t
t
t
t
t
t
AL = RCD(IDD)-1* CK(IDD); CK = CK(IDD), RC = RC(IDD), RRD = RRD(IDD), RCD = 1* CK(IDD); CKE is  
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is  
same as IDD4R; - Refer to the following page for detailed timing conditions  
IDD7  
mA  
Notes:  
1. IDD specifications are tested after the device is properly initialized  
2. Input slew rate is specified by AC Parametric Test Condition  
3. IDD parameters are specified with ODT disabled.  
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with  
all combinations of EMRS bits 10 and 11.  
5. Definitions for IDD  
LOW is defined as Vin VILAC(max)  
HIGH is defined as Vin VIHAC(min)  
STABLE is defined as inputs stable at a HIGH or LOW level  
FLOATING is defined as inputs at VREF = VDDQ/2  
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and  
control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock)  
for DQ signals not including masks or strobes.  
Rev. 1.1 / July 2006  
17  
1240pin Registered DDR2 SDRAM DIMMs  
Electrical Characteristics & AC Timings  
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin  
Speed  
Unit  
DDR2-800  
5-5-5  
min  
DDR2-667  
DDR2-533  
DDR2-400  
Bin(CL-tRCD-tRP)  
Parameter  
CAS Latency  
tRCD  
5-5-5  
min  
5
4-4-4  
min  
4
3-3-3  
min  
5
ns  
ns  
ns  
ns  
ns  
5
12.5  
15  
15  
15  
tRP  
12.5  
15  
15  
15  
tRAS  
45  
45  
45  
40  
tRC  
57.25  
60  
60  
55  
AC Timing Parameters by Speed Grade  
DDR2-400  
DDR2-533  
Parameter  
Symbol  
Unit Note  
Min  
Max  
+600  
+500  
0.55  
0.55  
Min  
-500  
-500  
0.45  
0.45  
Max  
500  
450  
0.55  
0.55  
Data-Out edge to Clock edge Skew  
DQS-Out edge to Clock edge Skew  
Clock High Level Width  
tAC  
tDQSCK  
tCH  
ps  
ns  
-600  
-500  
0.45  
0.45  
CK  
CK  
Clock Low Level Width  
tCL  
min  
(tCL,tCH)  
Clock Half Period  
tHP  
tCK  
ns  
ps  
-
min(tCL,tCH)  
-
System Clock Cycle Time  
3750  
8000  
5000  
8000  
ps  
ps  
1
1
1
1
DQ and DM input setup time(differential strobe)  
DQ and DM input hold time(differential strobe)  
DQ and DM input setup time(single ended strobe)  
tDS  
tDH  
150  
275  
25  
-
-
-
-
-
-
100  
225  
-25  
-
-
-
ps  
tDS1  
ps  
DQ and DM input hold time(single ended strobe)  
tDH1  
25  
-25  
0.6  
-
-
Control & Address input Pulse Width for each input  
tIPW  
tCK  
tCK  
ps  
0.6  
DQ and DM input pulse witdth for each input  
Data-out high-impedance window from CK, /CK  
tDIPW  
tHZ  
0.35  
-
-
0.35  
tAC max  
-
tAC max  
tAC max  
tAC max  
350  
DQS low-impedance time from CK/CK  
DQ low-impedance time from CK/CK  
DQS-DQ skew for DQS and associated DQ signals  
DQ hold skew factor  
tLZ(DQS)  
tLZ(DQ)  
tDQSQ  
tQHS  
ps  
ps  
tAC min  
tAC min  
tAC max  
2*tAC min  
2*tAC min  
tAC max  
ps  
-
-
-
-
300  
ps  
450  
400  
tQH  
ps  
DQ/DQS output hold time from DQS  
tHP - tQHS  
-0.25  
0.35  
0.35  
0.2  
-
tHP - tQHS  
-0.25  
0.35  
0.35  
0.2  
-
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
First DQS latching transition to associated clock edge  
DQS input high pulse width  
tDQSS  
+ 0.25  
+ 0.25  
tDQSH  
-
-
-
-
tDQSL  
tDSS  
DQS input low pulse width  
DQS falling edge to CK setup time  
DQS falling edge hold time from CK  
Mode register set command cycle time  
Write postamble  
-
-
tDSH  
0.2  
-
0.2  
-
tMRD  
tWPST  
2
-
2
-
0.4  
0.6  
0.4  
0.6  
Rev. 1.1 / July 2006  
18  
1240pin Registered DDR2 SDRAM DIMMs  
- continued -  
DDR2-400  
DDR2-533  
Parameter  
Symbol  
Unit Note  
Min  
Max  
Min  
Max  
Write preamble  
tWPRE  
tIS  
tCK  
ps  
0.35  
350  
475  
0.9  
-
-
0.35  
250  
375  
0.9  
-
-
Address and control input setup time  
Address and control input hold time  
Read preamble  
tIH  
ps  
-
-
tRPRE  
tRPST  
tCK  
tCK  
1.1  
0.6  
1.1  
0.6  
Read postamble  
0.4  
0.4  
Auto-Refresh to Active/Auto-Refresh command  
period  
tRFC  
ns  
ns  
ns  
105  
-
105  
7.5  
-
-
-
tRRD  
tFAW  
Row Active to Row Active Delay for 1KB page size  
Four Activate Window for 1KB page size  
7.5  
-
-
37.5  
37.5  
CAS to CAS command delay  
tCCD  
tWR  
tCK  
ns  
2
15  
2
15  
Write recovery time  
-
-
-
-
-
Auto Precharge Write Recovery + Precharge Time  
tDAL  
tWR+tRP  
tCK  
WR+tRP  
Write to Read Command Delay  
tWTR  
ns  
10  
7.5  
7.5  
7.5  
-
Internal read to precharge command delay  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tRTP  
tXSNR  
tXSRD  
ns  
ns  
tRFC + 10  
200  
tRFC + 10  
200  
tCK  
-
-
-
-
Exit precharge power down to any non-read  
command  
tXP  
tCK  
tCK  
tCK  
2
2
Exit active power down to read command  
tXARD  
tXARDS  
2
6 - AL  
3
2
6 - AL  
3
Exit active power down to read command  
(Slow exit, Lower power)  
CKE minimum pulse width  
(high and low pulse width)  
t
tCK  
CKE  
t
ODT turn-on delay  
ODT turn-on  
tCK  
ns  
2
2
2
2
AOND  
t
tAC(min)  
tAC(max)+1  
tAC(min)  
tAC(max)+1  
AON  
2tCK+  
tAC(max)+1  
2tCK+tAC(m  
ax)+1  
t
ODT turn-on(Power-Down mode)  
ODT turn-off delay  
ns  
tCK  
ns  
tAC(min)+2  
2.5  
tAC(min)+2  
2.5  
AONPD  
t
2.5  
2.5  
AOFD  
tAC(max)+0  
.6  
tAC(max)+  
0.6  
t
ODT turn-off  
tAC(min)  
tAC(min)  
AOF  
2.5tCK+tAC(  
max)+1  
2.5tCK+tAC(  
max)+1  
t
ODT turn-off (Power-Down mode)  
tAC(min)+2  
tAC(min)+2  
ns  
AOFPD  
ODT to power down entry latency  
ODT power down exit latency  
OCD drive mode output delay  
tANPD  
tAXPD  
tOIT  
tCK  
tCK  
ns  
3
8
0
3
8
0
12  
12  
Minimum time clocks remains ON after CKE  
asynchronously drops LOW  
tDelay  
tIS+tCK+tIH  
tIS+tCK+tIH  
ns  
tREFI  
tREFI  
-
-
7.8  
3.9  
-
-
7.8  
3.9  
us  
us  
2
3
Average periodic Refresh Interval  
Note :  
1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS12[4, 8]21BFP).  
2. C TCASE ≤ 85°C  
3. 85°C TCASE ≤ 95°C  
Rev. 1.1 / July 2006  
19  
1240pin Registered DDR2 SDRAM DIMMs  
DDR2-667  
min  
DDR2-800  
min  
Symbol  
Unit Note  
Parameter  
max  
+450  
+400  
0.55  
max  
+400  
+350  
0.55  
DQ output access time from CK/CK  
DQS output access time from CK/CK  
CK high-level width  
tAC  
tDQSCK  
tCH  
-450  
-400  
0.45  
0.45  
-400  
-350  
0.45  
0.45  
ps  
ps  
tCK  
tCK  
CK low-level width  
tCL  
0.55  
0.55  
min(tCL,  
tCH)  
min(tCL,  
tCH)  
CK half period  
tHP  
tCK  
tDS  
-
8000  
-
-
ps  
ps  
Clock cycle time, CL=x  
3000  
2500  
DQ and DM input setup time  
(differential strobe)  
100  
50  
-
-
-
ps  
ps  
1
1
DQ and DM input hold time  
(differential strobe)  
tDH  
175  
0.6  
-
-
125  
0.6  
Control & Address input pulse width for each  
input  
tIPW  
tCK  
DQ and DM input pulse width for each input  
Data-out high-impedance time from CK/CK  
DQS low-impedance time from CK/CK  
DQ low-impedance time from CK/CK  
tDIPW  
tHZ  
0.35  
-
-
0.35  
-
-
tCK  
ps  
tAC max  
tAC max  
tAC max  
tAC max  
tAC max  
tAC max  
tLZ(DQS)  
tLZ(DQ)  
tAC min  
2*tAC min  
tAC min  
2*tAC min  
ps  
ps  
DQS-DQ skew for DQS and associated DQ  
signals  
tDQSQ  
-
240  
-
200  
ps  
DQ hold skew factor  
tQHS  
tQH  
-
340  
-
-
300  
-
ps  
ps  
DQ/DQS output hold time from DQS  
tHP - tQHS  
tHP - tQHS  
First DQS latching transition to associated  
clock edge  
tDQSS  
- 0.25  
+ 0.25  
- 0.25  
+ 0.25  
tCK  
DQS input high pulse width  
DQS input low pulse width  
DQS falling edge to CK setup time  
DQS falling edge hold time from CK  
Mode register set command cycle time  
Write postamble  
tDQSH  
tDQSL  
tDSS  
0.35  
0.35  
0.2  
0.2  
2
-
0.35  
0.35  
0.2  
0.2  
2
-
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
tCK  
ps  
-
-
-
-
tDSH  
tMRD  
tWPST  
tWPRE  
tIS  
-
-
-
0.6  
-
-
0.6  
-
0.4  
0.35  
200  
275  
0.9  
0.4  
45  
0.4  
0.35  
175  
250  
0.9  
0.4  
45  
Write preamble  
Address and control input setup time  
Address and control input hold time  
Read preamble  
-
-
tIH  
-
-
ps  
tRPRE  
tRPST  
tRAS  
1.1  
0.6  
70000  
1.1  
0.6  
70000  
tCK  
tCK  
ns  
Read postamble  
Activate to precharge command  
Active to active command period for 1KB  
page size products  
tRRD  
tFAW  
7.5  
-
-
7.5  
35  
-
-
ns  
ns  
Four Active Window for 1KB page size  
products  
37.5  
Rev. 1.1 / July 2006  
20  
1240pin Registered DDR2 SDRAM DIMMs  
- continued -  
DDR2-667  
max  
DDR2-800  
max  
Symbol  
Unit Note  
Parameter  
min  
2
min  
2
CAS to CAS command delay  
Write recovery time  
tCCD  
tWR  
tCK  
ns  
15  
-
-
-
15  
-
-
-
Auto precharge write recovery + precharge  
time  
tDAL  
WR+tRP  
WR+tRP  
tCK  
Internal write to read command delay  
Internal read to precharge command delay  
Exit self refresh to a non-read command  
Exit self refresh to a read command  
tWTR  
tRTP  
7.5  
7.5  
7.5  
7.5  
ns  
ns  
tXSNR  
tXSRD  
tRFC + 10  
200  
tRFC + 10  
200  
ns  
-
-
-
-
tCK  
Exit precharge power down to any non-read  
command  
tXP  
2
2
2
2
tCK  
tCK  
tCK  
Exit active power down to read command  
Exit active power down to read command  
tXARD  
tXARDS  
7 - AL  
8 - AL  
(Slow exit, Lower power)  
CKE minimum pulse width  
(high and low pulse width)  
tCKE  
tAOND  
tAON  
3
2
3
2
tCK  
tCK  
ns  
ODT turn-on delay  
2
2
tAC(max)  
+0.7  
tAC(max)  
+0.7  
ODT turn-on  
tAC(min)  
tAC(min)  
2tCK+  
tAC(max)+1  
tAC(min)  
+2  
2tCK+  
tAC(max)+1  
tAONPD  
tAOFD  
tAOF  
ODT turn-on(Power-Down mode)  
ODT turn-off delay  
tAC(min)+2  
2.5  
ns  
tCK  
ns  
2.5  
2.5  
2.5  
tAC(max)+  
0.6  
tAC(max)  
+0.6  
ODT turn-off  
tAC(min)  
tAC(min)  
tAC(min)  
+2  
2.5tCK+  
tAC(max)+1  
tAC(min)  
+2  
2.5tCK+  
tAC(max)+1  
tAOFPD  
ODT turn-off (Power-Down mode)  
ns  
ODT to power down entry latency  
ODT power down exit latency  
OCD drive mode output delay  
tANPD  
tAXPD  
tOIT  
3
8
0
3
8
0
tCK  
tCK  
ns  
12  
12  
Minimum time clocks remains ON after CKE  
asynchronously drops LOW  
tIS+tCK  
+tIH  
tDelay  
tIS+tCK+tIH  
ns  
tREFI  
tREFI  
-
-
7.8  
3.9  
-
-
7.8  
3.9  
us  
us  
2
3
Average periodic Refresh Interval  
Note :  
1. For details and notes, please refer to the relevant HYNIX component datasheet (HY5PS12[4, 8]21BFP).  
2. C TCASE ≤ 85°C  
3. 85°C TCASE ≤ 95°C  
Rev. 1.1 / July 2006  
21  
1240pin Registered DDR2 SDRAM DIMMs  
PACKAGE OUTLINE  
64Mx72 (1 rank) - HYMP564R72BP8 / HYMP564P72BP8  
Front  
133.35  
Side  
2..7 max  
4.0±0.1  
Front)  
30.0  
PLL  
Detail-A  
Detail-B  
1.27±0.10  
5.175  
63.0  
55.0  
5.175  
5.0  
Back  
3.0  
3.0  
Detail of Contacts A  
Detail of Contacts B  
2.50  
1.0  
± 0.05  
0.8  
± 0.10  
1.50  
5.00  
Note) All dimensions are typical millimeter scale unless otherwise stated.  
Rev. 1.1 / July 2006  
22  
1240pin Registered DDR2 SDRAM DIMMs  
PACKAGE OUTLINE  
128Mx72 (2 ranks) - HYMP512R72BP8 / HYMP512P72BP8  
Front  
Side  
4.0 max  
133.35  
4.0±0.1  
30.0  
PLL  
Detail-A  
Detail-B  
5.175  
1.27 ± 0.10  
63.0  
55.0  
5.175  
5.0  
Back  
3.0  
3.0  
Detail of Contacts A  
Detail of Contacts B  
2.50  
1.0  
± 0.05  
0.8  
± 0.10  
1.50  
5.00  
Note) All dimensions are typical millimeter scale unless otherwise stated.  
Rev. 1.1 / July 2006  
23  
1240pin Registered DDR2 SDRAM DIMMs  
PACKAGE OUTLINE  
128Mx72 (1 rank) - HYMP512R72BP4 / HYMP512P72BP4  
Front  
Side  
4.0 max  
133.35  
4.0±0.1  
30.0  
PLL  
Detail-A  
Detail-B  
5.175  
1.27 ± 0.10  
63.0  
55.0  
5.175  
5.0  
Back  
3.0  
3.0  
Detail of Contacts A  
Detail of Contacts B  
2.50  
1.0  
± 0.05  
0.8  
± 0.10  
1.50  
5.00  
Note) All dimensions are typical millimeter scale unless otherwise stated.  
Rev. 1.1 / July 2006  
24  
1240pin Registered DDR2 SDRAM DIMMs  
PACKAGE OUTLINE  
256Mx72 (2 ranks) - HYMP525R72BP4 / HYMP525P72BP4  
Front  
Side  
4.0 max  
133.35  
4.0±0.1  
30.0  
Detail-A  
Detail-B  
1.27 ± 0.10  
5.175  
63.0  
55.0  
5.175  
5.0  
Back  
3.0  
3.0  
Detail of Contacts A  
Detail of Contacts B  
2.50  
1.0  
± 0.05  
0.8  
± 0.10  
1.50  
5.00  
Note) All dimensions are typical millimeter scale unless otherwise stated.  
Rev. 1.1 / July 2006  
25  
1240pin Registered DDR2 SDRAM DIMMs  
REVISION HISTORY  
Revision  
History  
Date  
Remark  
1.0  
First Version Release  
Oct. 2005  
July 2006  
1.1  
Leakage current spec. added to the DC OPERATING CONDITIONS  
Rev. 1.1 / July 2006  
26  
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