IXTV280N055T
IXTV280N055TS
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
PLUS220 (IXTV) Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
75
118
S
Ciss
Coss
Crss
9800
1450
320
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
32
55
49
37
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 50 A
RG = 3.3 Ω (External)
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
Qg(on)
Qgs
200
50
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
50
RthJC
RthCS
0.27°C/W
°C/W
PLUS220
.25
Source-Drain Diode
Symbol
Values
Test Conditions
(TJ = 25°C unless otherwise specified)
Characteristic
Min. Typ.
Max.
280
600
1.0
PLUS220SMD (IXTV_S) Outline
IS
VGS = 0 V
A
A
ISM
VSD
trr
Pulse width limited by TJM
IF = 50 A, VGS = 0 V, Note 1
V
IF = 50 A, -di/dt = 100 A/µs
70
ns
VR = 25 V, VGS = 0 V
Note 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location is 5 mm or less from the package body.
PRELIMINARYTECHNICALINFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
7,005,734B2
7,063,975B2
7,071,537