IXTH26N60P IXTQ26N60P
IXTT26N60P IXTV26N60P IXTV26N60PS
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
16
26
S
Ciss
Coss
Crss
4150
400
27
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
25
27
75
21
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25, ID = 0.5 ID25
RG = 5 Ω (External)
Qg(on)
Qgs
72
27
24
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.27 °C/W
°C/W
TO-3P, PLUS220 & TO-247
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
Test Conditions
IS
VGS = 0 V
26
78
A
ISM
VSD
trr
Repetitive
A
V
n
IF = IS, VGS = 0 V, pulse test
IF = 26A, -di/dt = 100 A/μs
1.5
500
Characteristic Curves
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25
@ 25
º
C
º
C
60
54
48
42
36
30
24
18
12
6
V
10V
7V
V
= 10V
7V
GS =
24
20
16
12
8
GS
6V
6V
4
5V
5V
5
0
0
0
3
6
9
12 15 18 21 24 27 30
0
1
2
3
4
6
7
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
