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IXTT240N15X4HV

型号：

IXTT240N15X4HV

品牌：

LITTELFUSE[ LITTELFUSE ]

页数：

7 页

PDF大小：

337 K

下载PDF手册
Advance Technical Information  
X4-Class  
VDSS = 150V  
ID25 = 240A  
RDS(on) 4.4m  
IXTT240N15X4HV  
IXTH240N15X4  
Power MOSFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-268HV (IXTT..HV)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25C to 175C  
150  
150  
V
V
D (Tab)  
VDGR  
TJ = 25C to 175C, RGS = 1M  
TO-247 (IXTH)  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
ID25  
IL(RMS)  
IDM  
TC = 25C  
External Lead Current Limit  
TC = 25C, Pulse Width Limited by TJM  
240  
160  
420  
A
A
A
G
D
S
D (Tab)  
D = Drain  
IA  
TC = 25C  
TC = 25C  
120  
1.2  
A
J
EAS  
G = Gate  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
10  
V/ns  
W
940  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
International Standard Packages  
Low RDS(ON) and QG  
Avalanche Rated  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-268HV  
TO-247  
4
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
150  
V
V
Applications  
2.5  
4.5  
Switch-Mode and Resonant-Mode  
100 nA  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
IDSS  
25 A  
1.5 mA  
TJ = 150C  
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
3.6  
4.4 m  
DS100908A(6/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTT240N15X4HV  
IXTH240N15X4  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
gfs  
VDS = 10V, ID = 60A, Note 1  
Gate Input Resistance  
90  
150  
S
RGi  
1.2  
Ciss  
Coss  
Crss  
8900  
1450  
6
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
Effective Output Capacitance  
Co(er)  
Co(tr)  
1020  
4100  
pF  
pF  
Energy related  
Time related  
VGS = 0V  
DS = 0.8 • VDSS  
V
td(on)  
tr  
td(off)  
tf  
30  
8
ns  
ns  
ns  
ns  
Resistive Switching Times  
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
V
92  
7
RG = 2(External)  
Qg(on)  
Qgs  
195  
52  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
50  
RthJC  
RthCS  
0.16 C/W  
C/W  
TO-247  
0.21  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max  
IS  
VGS = 0V  
240  
A
A
ISM  
VSD  
Repetitive, pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
960  
1.4  
V
trr  
QRM  
IRM  
130  
0.6  
9.4  
ns  
IF = 120A, -di/dt = 100A/μs  
μC  
VR = 100V  
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2 6,759,692  
6,710,463  
6,727,585  
7,005,734B2 7,157,338B2  
7,063,975B2  
6,771,478B2 7,071,537  
IXTT240N15X4HV  
IXTH240N15X4  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
240  
200  
160  
120  
80  
VGS = 15V  
10V  
V
= 10V  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
5V  
6V  
5V  
40  
0
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 120A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
240  
200  
160  
120  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GS  
V
= 10V  
GS  
10V  
8V  
7V  
6V  
I
= 240A  
D
I
= 120A  
D
5V  
4V  
40  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 120A Value vs.  
Drain Current  
Fig. 6. Normalized Breakdown & Threshold Voltages  
vs. Junction Temperature  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
V
= 10V  
GS  
BV  
DSS  
o
T = 150 C  
J
o
T = 25 C  
J
V
GS(th)  
100  
-60  
-40  
-20  
0
20  
40  
60  
80  
120  
140  
160  
100  
200  
300  
400  
500  
600  
700  
800  
TJ - Degrees Centigrade  
ID - Amperes  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXTT240N15X4HV  
IXTH240N15X4  
Fig. 7. Maximum Drain Current vs. Case Temperature  
Fig. 8. Input Admittance  
300  
250  
200  
150  
100  
50  
180  
160  
140  
120  
100  
80  
V
= 10V  
DS  
External Lead Current Limit  
o
T
J
= 150 C  
o
25 C  
60  
o
- 40 C  
40  
20  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
360  
200  
TC - Degrees Centigrade  
VGS - Volts  
Fig. 10. Forward Voltage Drop of Intrinsic Diode  
Fig. 9. Transconductance  
400  
350  
300  
250  
200  
150  
100  
50  
800  
700  
600  
500  
400  
300  
200  
100  
0
o
T = - 40 C  
J
V
= 10V  
DS  
o
25 C  
o
150 C  
o
T = 150 C  
J
o
T = 25 C  
J
0
0
40  
80  
120  
160  
200  
240  
280  
320  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
VSD - Volts  
ID - Amperes  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100,000  
10,000  
1,000  
100  
V
= 75V  
DS  
I
I
= 120A  
= 10mA  
D
G
C
C
iss  
oss  
C
rss  
10  
= 1 MHz  
f
1
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
1
10  
100  
1,000  
VDS - Volts  
QG - NanoCoulombs  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Fig. 14. Forward-Bias Safe Operating Area  
Fig. 13. Output Capacitance Stored Energy  
1000  
100  
10  
12  
10  
8
R
Limit  
)
DS(  
on  
25μs  
100μs  
External Lead Limit  
6
4
1ms  
o
T = 175 C  
J
o
2
T
C
= 25 C  
Single Pulse  
DC  
10ms  
0
1
0
20  
40  
60  
80  
100  
120  
140  
1
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
Fig. 15. Maximum Transient Thermal Impedance  
aaaaa  
0.3  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
© 2018 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_240N15X4 (18) 6-14-18  
IXTT240N15X4HV  
IXTH240N15X4  
TO-268HV Outline  
PINS:  
1 - Gate 2 - Source  
3 - Drain  
TO-247 Outline  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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