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IXTT22N60P

型号：

IXTT22N60P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

577 K

下载PDF手册
PolarHVTM  
Power MOSFET  
IXTQ 22N60P  
IXTT 22N60P  
VDSS  
ID25  
= 600 V  
= 22 A  
RDS(on) ≤ 330 mΩ  
N-Channel Enhancement Mode  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-3P(IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGS  
Continuous  
Tranisent  
20  
30  
V
V
VGSM  
G
ID25  
IDM  
TC = 25°C  
22  
66  
A
A
D
(TAB)  
S
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
22  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
mJ  
J
TO-268 (IXTT)  
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 4 Ω  
,
10  
V/ns  
G
S
D (TAB)  
TC = 25°C  
400  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
250  
°C  
°C  
Features  
Md  
Mounting torque  
(TO-3P)  
1.13/10 Nm/lb.in.  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Weight  
TO-3P  
6
5
g
g
z
z
TO-268  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 30 VDC, VDS = 0  
600  
V
V
Advantages  
3.0  
5.0  
z
Easy to mount  
Space savings  
z
100  
nA  
z
High power density  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
330 mΩ  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
DS99250A(12/04)  
© 2004 IXYS All rights reserved  
IXTQ 22N60P  
IXTT 22N60P  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-3P (IXTQ) Outline  
VDS = 20 V; ID = 0.5 ID25, pulse test  
15  
21  
S
Ciss  
Coss  
Crss  
3600  
305  
38  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
20  
20  
60  
23  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
105  
25  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
55  
RthJC  
RthCK  
0.31  
K/W  
K/W  
(TO-3P)  
0.21  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
22  
66  
A
TO-268 Outline  
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
ns  
trr  
IF = 26A  
-di/dt = 100 A/µs  
VR = 100V  
410  
4.0  
QRM  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXTQ 22N60P  
IXTT 22N60P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
º
º
@ 25 C  
@ 25 C  
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
8V  
V
= 10V  
9V  
8V  
GS  
GS  
7.5V  
7V  
7.5V  
7V  
6
6.5V  
6V  
4
6V  
7
2
0
0
0
0
0
1
2
3
4
5
6
8
9
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Normalized to 0.5 ID25  
Value vs. Junction Temperature  
)
º
@ 125 C  
22  
20  
18  
16  
14  
12  
10  
8
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
8V  
7V  
GS  
V
= 10V  
GS  
6.5V  
6V  
I
= 22A  
D
I
= 11A  
D
6
4
5.5V  
5V  
0.7  
0.4  
2
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
-50  
-25  
0
25  
50  
75  
100 125 150  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
24  
20  
16  
12  
8
V
= 10V  
GS  
T = 125 C  
º
J
1.8  
1.6  
1.4  
1.2  
1
4
T = 25  
J
º
C
0.8  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2004 IXYS All rights reserved  
IXTQ 22N60P  
IXTT 22N60P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
T = -40 C  
º
J
25  
125  
º
C
º
C
T = 125  
º
º
º
C
C
C
J
25  
-40  
6
6
3
3
0
0
4.5  
0.4  
0
5
5.5  
6
6.5  
7
7.5  
8
0
3
6
9
12 15 18 21 24 27 30  
I D - Amperes  
VG S - Volts  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 11A  
D
G
= 10mA  
T = 125  
º
C
J
T = 25  
J
º
C
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10 20 30 40 50 60 70 80 90 100 110  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10000  
1000  
100  
f = 1MHz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
C
1ms  
oss  
rss  
10ms  
T = 150ºC  
J
DC  
T
= 25ºC  
C
10  
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 22N60P  
IXTT 22N60P  
Fig . 13. M axim um Tr an s ie nt T he rm al Re s is tance  
1.00  
0.10  
0.01  
0.1  
1
10  
100  
1000  
Puls e Width - millisec onds  
© 2004 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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