TM
Central
CYT5551HCD
Semiconductor Corp.
SURFACE MOUNT
DUAL, ISOLATED NPN HIGH CURRENT
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5551HCD
type consists of two (2) isolated NPN high current
silicon transistors packaged in an epoxy molded
SOT-228 surface mount case. Manufactured by the
epitaxial planar process, this SUPERmini™ device
is ideal for high current applications.
MARKING CODE: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
180
160
6.0
1.0
2.0
V
CBO
CEO
EBO
V
V
I
A
C
Power Dissipation
P
W
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
J
-65 to +150
62.5
°C
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
50
UNITS
nA
µA
nA
V
I
V
V
V
=120V
CBO
CB
CB
BE
I
=120V, T =100ºC
A
=4.0V
50
CBO
I
50
EBO
BV
I =100µA
180
160
6.0
CBO
C
BV
I =1.0mA
C
V
CEO
BV
I =10µA
V
EBO
E
V
I =10mA, I =1.0mA
0.15
0.20
1.00
1.00
V
CE(SAT)
C
B
V
I =50mA, I =5.0mA
V
CE(SAT)
C
B
V
I =10mA, I =1.0mA
V
BE(SAT)
C
B
V
I =50mA, I =5.0mA
V
BE(SAT)
C
B
h
V
=5.0V, I =1.0mA
80
80
30
FE
CE
CE
CE
CE
CE
CB
C
h
V
V
V
V
V
=5.0V, I =10mA
C
250
FE
h
=5.0V, I =50mA
FE
C
h
=10V, I =1.0A
C
10
FE
f
=10V, I =10mA, f=100MHz
100
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
E
15
ob
R0 (15-March 2005)
