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UZXTD6717E6TA

型号：

UZXTD6717E6TA

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

7 页

PDF大小：

112 K

下载PDF手册
ZXTD6717E6  
COMPLEMENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS  
SUMMARY  
NPN: VCEO=15V; VCE(sat)=0.1V; IC= 1.5A;  
PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A;  
DESCRIPTION  
This new combination device comprises a complementary NPN and PNP low  
saturation transistor housed in the SOT23-6 package. Users benefit from very  
efficient performance combining a high current operation, exceptionally low  
S OT2 3 -6  
V
CE(sat) and high HFE resulting in extremely low on state losses. This dual transistor  
is ideal for use in a variety of efficient driving functions including motors, lamps,  
relays and solenoids and will also benefit circuits requiring high output current switching.  
FEATURES  
C2  
C1  
•
•
Low Saturation Voltage  
R
CE(sat) values  
-
NPN =135m Ω at 1.5A  
PNP =150m Ω at 1.25A  
B1  
B2  
•
•
•
hFE m in 200 at 1A  
IC=1.5A Continuous (NPN), 1.25A (PNP)  
SOT23-6 package with PD = 1.1W  
E1  
E2  
APPLICATIONS  
•
Various driving functions  
Lam ps  
Motors  
Relays and solenoids  
•
High output current switches  
ORDERING INFORMATION  
Top View  
DEVICE  
REEL S IZE  
(in ch e s )  
TAPE WIDTH  
(m m )  
QUANTITY  
PER REEL  
ZXTD6717E6TA  
ZXTD6717E6TC  
7
8m m e m b o s s e d  
8m m e m b o s s e d  
3000 u n its  
10000 u n its  
13  
DEVICE MARKING  
6717  
ISSUE 2 - J ULY 2001  
1
ZXTD6717E6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
LIMIT NPN  
LIMIT PNP  
UNIT  
V
Co lle cto r-Ba s e Vo lta g e  
Co lle cto r-Em itte r Vo lta g e  
Em itte r-Ba s e Vo lta g e  
Pe a k Pu ls e Cu rre n t  
V
V
V
15  
15  
5
-12  
-12  
-5  
CBO  
CEO  
EBO  
V
V
I
I
I
5
-3  
A
CM  
Co n tin u o u s Co lle cto r Cu rre n t  
Ba s e Cu rre n t  
1.5  
200  
-1.25  
-200  
A
C
B
m A  
Po w e r Dis s ip a tio n a t TA=25°C (a )  
Lin e a r De ra tin g Fa cto r  
P
1.1  
8.8  
1.1  
8.8  
W
m W/°C  
D
Po w e r Dis s ip a tio n a t TA=25°C (b )  
Lin e a r De ra tin g Fa cto r  
P
1.7  
13.6  
1.7  
13.6  
W
m W/°C  
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
T :T  
-55 to +150  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
UNIT  
°C/W  
°C/W  
J u n ctio n to Am b ie n t (a )  
J u n ctio n to Am b ie n t (b )  
R
R
125  
45  
θJ A  
θJ A  
NOTES  
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.  
ISSUE 2 - J ULY 2001  
2
ZXTD6717E6  
NPN TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).  
PARAMETER  
S YMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS .  
Co lle cto r-Ba s e Bre a kd o w n  
Vo lta g e  
V
V
V
15  
15  
5
V
I =100␮A  
(BR)CBO  
(BR)CEO  
C
Co lle cto r-Em itte r Bre a kd o w n  
Vo lta g e  
V
I =10m A*  
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e  
Co lle cto r Cu t-Off Cu rre n t  
V
I =100␮A  
E
(BR)EBO  
CBO  
I
I
I
10  
10  
10  
n A  
n A  
n A  
V
V
V
=10V  
=4V  
CB  
Em itte r Cu t-Off Cu rre n t  
EBO  
EB  
Co lle cto r Em itte r Cu t-Off Cu rre n t  
=10V  
CES  
CES  
Co lle cto r-Em itte r S a tu ra tio n  
Vo lta g e  
V
16.5  
40  
75  
150  
205  
20  
55  
100  
200  
245  
m V  
m V  
m V  
m V  
m V  
I =100m A, I =10m A*  
C B  
CE(s a t)  
I =250m A, I =10m A*  
C
B
I =500m A, I =10m A*  
C B  
I =1A, I =10m A*  
C B  
I =1.5A, I =20m A*  
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e  
Ba s e -Em itte r Tu rn -On Vo lta g e  
V
V
0.93  
1.1  
1.1  
V
V
I =1.5A, I =20m A*  
C B  
BE(s a t)  
BE(o n )  
FE  
0.865  
I =1.5A, V =2V*  
C CE  
S ta tic Fo rw a rd Cu rre n t Tra n s fe r  
Ra tio  
h
200  
300  
250  
200  
75  
420  
450  
390  
300  
150  
75  
I =10m A, V =2V*  
C CE  
I =100m A, V =2V*  
C
CE  
I =500m A, V =2V*  
C
CE  
I =1A, V =2V*  
C
CE  
I =3A, V =2V*  
C
CE  
30  
I =5A, V =2V*  
C CE  
Tra n s itio n Fre q u e n cy  
Ou tp u t Ca p a cita n ce  
f
180  
15  
MHz  
p F  
I =50m A, V =10V  
f=100MHz  
T
C
CE  
C
V
=10V, f=1MHz  
o b o  
CB  
Tu rn -On Tim e  
Tu rn -Off Tim e  
t
t
50  
250  
n s  
n s  
I =1A, V =10V  
C CC  
(o n )  
(o ff)  
I
=I =100m A  
B1 B2  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ISSUE 2 - J ULY 2001  
3
ZXTD6717E6  
PNP TRANSISTOR  
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).  
PARAMETER  
S YMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS .  
Co lle cto r-Ba s e Bre a kd o w n  
Vo lta g e  
V
V
V
-12  
-12  
-5  
V
I =-100␮A  
(BR)CBO  
(BR)CEO  
C
Co lle cto r-Em itte r Bre a kd o w n  
Vo lta g e  
V
I =-10m A*  
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e  
Co lle cto r Cu t-Off Cu rre n t  
V
I =-100␮A  
E
(BR)EBO  
CBO  
I
I
I
-10  
-10  
-10  
n A  
n A  
n A  
V
V
V
=-10V  
=-4V  
CB  
Em itte r Cu t-Off Cu rre n t  
EBO  
EB  
Co lle cto r Em itte r Cu t-Off Cu rre n t  
=-10V  
CES  
CES  
Co lle cto r-Em itte r S a tu ra tio n  
Vo lta g e  
V
-25  
-55  
-110  
-160  
-185  
-40  
-100  
-175  
-215  
-240  
m V  
m V  
m V  
m V  
m V  
I =-100m A, I =-10m A*  
C B  
CE(s a t)  
I =-250m A, I =-10m A*  
C
B
I =-500m A, I =-10m A*  
C B  
I =-1A, I =-50m A*  
C
B
I =-1.25A, I =-100m A*  
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e  
Ba s e -Em itte r Tu rn -On Vo lta g e  
V
V
-0.99  
-0.85  
-1.10  
-1.0  
V
V
I =-1.25A, I =-100m A*  
C B  
BE(s a t)  
BE(o n )  
FE  
I =-1.25A, V =-2V*  
C
CE  
S ta tic Fo rw a rd Cu rre n t Tra n s fe r  
Ra tio  
h
300  
300  
200  
125  
75  
490  
450  
340  
250  
140  
80  
I =-10m A, V =-2V*  
C CE  
I =-100m A, V =-2V*  
C
CE  
I =-500m A, V =-2V*  
C
CE  
I =-1.25A, V =-2V*  
C
CE  
I =-2A, V =-2V*  
C
CE  
30  
I =-3A, V =-2V*  
C CE  
Tra n s itio n Fre q u e n cy  
Ou tp u t Ca p a cita n ce  
f
220  
15  
MHz  
p F  
I =-50m A, V =-10V  
f=100MHz  
T
C
CE  
C
V
=-10V, f=1MHz  
o b o  
CB  
Tu rn -On Tim e  
Tu rn -Off Tim e  
t
t
50  
135  
n s  
n s  
I =-1A, V =-10V  
C CC  
(o n )  
(o ff)  
I
=I =-100m A  
B1 B2  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ISSUE 2 - J ULY 2001  
4
ZXTD6717E6  
NPN TYPICAL CHARACTERISTICS  
0.4  
0.3  
0.2  
0.1  
0
0.4  
+25°C  
IC/IB =50  
0.3  
0.2  
0.1  
0
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+2 5 ° C  
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
800  
600  
400  
200  
0
VCE=2V  
IC/IB =50  
1.0  
0.75  
0.5  
+100°C  
+25°C  
-55°C  
+25°C  
+100°C  
+150°C  
-55°C  
0.25  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
10  
1
1.0  
0.8  
0.6  
0.4  
0.2  
0
DC  
1s  
100ms  
10ms  
1ms  
-55°C  
+2 5 ° C  
100m  
100us  
+100°C  
+150°C  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VCE - Collector Em itter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
ISSUE 2 - J ULY 2001  
5
ZXTD6717E6  
PNP TYPICAL CHARACTERISTICS  
0.4  
0.4  
+2 5 ° C  
IC/IB =50  
0.3  
0.2  
0.1  
0
0.3  
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+25°C  
0.2  
0.1  
0
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
VCE(sat) v IC  
VCE(sat) v IC  
800  
600  
400  
200  
0
1.0  
0.8  
0.6  
0.4  
0.2  
0
IC/IB =50  
VCE=2V  
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
IC - Collector Current (A)  
hFE v IC  
VBE(sat) v IC  
10  
1
1.0  
0.8  
0.6  
0.4  
0.2  
0
DC  
1s  
100ms  
10ms  
1ms  
-55°C  
+25°C  
100m  
10m  
+1 0 0 ° C  
+1 5 0 ° C  
100µs  
100m  
1
10  
100  
1m  
10m  
100m  
1
10  
IC - Collector Current (A)  
VCE - Collector Em itter Voltage (V)  
VBE(on) v IC  
Safe Operating Area  
ISSUE 2 - J ULY 2001  
6
ZXTD6717E6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millim e tre s  
Min  
In ch e s  
Min  
Ma x  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Ma x  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e 1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
agents and distributors in  
major countries world-wide  
© Zetex plc 2001  
www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 2 - J ULY 2001  
7
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