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UZXT10N50DE6TA

型号：

UZXT10N50DE6TA

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

6 页

PDF大小：

223 K

下载PDF手册
ZXT10N50DE6  
SuperSOT™  
50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
VCEO=50V; RSAT = 75m ; IC= 3A  
DESCRIPTION  
This new 4th generation ultra low saturation transistor utilises the Zetex  
m atrix structure com bined with advanced assem bly techniques to give  
extrem ely low on state losses. This m akes it ideal for high efficiency, low  
voltage switching applications.  
S OT2 3 -6  
FEATURES  
•
•
•
•
•
Low Equivalent On Resistance  
Extrem ely Low Saturation Voltage  
hFE characterised up to 12A  
IC=3A Continuous Collector Current  
SOT23-6 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Managem ent Functions  
Power switches  
Motor control  
C
C
B
C
C
E
ORDERING INFORMATION  
DEVICE  
REEL S IZE  
TAPE WIDTH  
(m m )  
QUANTITY  
PER REEL  
(in ch e s )  
ZXT10N50DE6TA  
ZXT10N50DE6TC  
7
8m m e m b o s s e d  
8m m e m b o s s e d  
3000 u n its  
10000 u n its  
Top View  
13  
DEVICE MARKING  
619  
ISSUE 1 - SEPTEMBER 2000  
1
ZXT10N50DE6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
LIMIT  
UNIT  
V
Co lle cto r-Ba s e Vo lta g e  
Co lle cto r-Em itte r Vo lta g e  
Em itte r-Ba s e Vo lta g e  
Pe a k Pu ls e Cu rre n t  
V
V
V
50  
50  
5
CBO  
CEO  
EBO  
V
V
I
I
I
6
A
CM  
Co n tin u o u s Co lle cto r Cu rre n t  
Ba s e Cu rre n t  
3
A
C
B
500  
m A  
Po w e r Dis s ip a tio n a t TA=25°C (a )  
Lin e a r De ra tin g Fa cto r  
P
1.1  
8.8  
W
m W/°C  
D
Po w e r Dis s ip a tio n a t TA=25°C (b )  
Lin e a r De ra tin g Fa cto r  
P
1.7  
13.6  
W
m W/°C  
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
T :T  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
UNIT  
J u n ctio n to Am b ie n t (a )  
J u n ctio n to Am b ie n t (b )  
R
R
113  
73  
°C/W  
°C/W  
θJ A  
θJ A  
NOTES  
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface m ounted on FR4 PCB m easured at tр5 secs.  
ISSUE 1 - SEPTEMBER 2000  
2
ZXT10N50DE6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - SEPTEMBER 2000  
3
ZXT10N50DE6  
ELECTRICAL CHARACTERISTICS (at Tam b = 25°C unless otherw ise stated).  
PARAMETER  
S YMBOL MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS .  
Co lle cto r-Ba s e Bre a kd o w n  
Vo lta g e  
V
V
V
50  
50  
5
190  
V
I =100␮A  
(BR)CBO  
(BR)CEO  
C
Co lle cto r-Em itte r Bre a kd o w n  
Vo lta g e  
65  
V
I =10m A*  
C
Em itte r-Ba s e Bre a kd o w n Vo lta g e  
Co lle cto r Cu t-Off Cu rre n t  
8.3  
V
I =100␮A  
E
(BR)EBO  
CBO  
I
I
I
100  
100  
100  
20  
n A  
n A  
n A  
V
V
V
=40V  
=4V  
CB  
Em itte r Cu t-Off Cu rre n t  
EBO  
EB  
Co lle cto r Em itte r Cu t-Off Cu rre n t  
=40V  
CES  
CES  
Co lle cto r-Em itte r S a tu ra tio n  
Vo lta g e  
V
14  
m V  
m V  
m V  
m V  
I =0.1A, I =10m A*  
C B  
CE(s a t)  
145 200  
115  
225  
I =1A, I =10m A*  
C B  
200  
300  
I =2A, I =50m A*  
C B  
I =3A, I =100m A*  
C
B
Ba s e -Em itte r S a tu ra tio n Vo lta g e  
Ba s e -Em itte r Tu rn -On Vo lta g e  
V
V
0.93 1.0  
V
V
I =3A, I =100m A*  
C B  
BE(s a t)  
BE(o n )  
FE  
0.88 0.95  
I =3A, V =2V*  
C CE  
S ta tic Fo rw a rd Cu rre n t Tra n s fe r  
Ra tio  
h
200  
300  
200  
100  
400  
I =10m A, V =2V*  
C CE  
450  
400  
225  
40  
I =0.2A, V =2V*  
C CE  
I =1A, V =2V*  
C
CE  
I =2A, V =2V*  
C
CE  
I =6A, V =2V*  
C
CE  
Tra n s itio n Fre q u e n cy  
f
100  
165  
MHz  
I =50m A, V =10V  
T
C
CE  
f=100MHz  
Ou tp u t Ca p a cita n ce  
Tu rn -On Tim e  
C
12  
20  
p F  
n s  
n s  
V
=10V, f=1MHz  
o b o  
(o n )  
(o ff)  
CB  
t
t
170  
750  
V
=10V, I =1A  
C
=I =10m A  
CC  
I
B1 B2  
Tu rn -Off Tim e  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ISSUE 1 - SEPTEMBER 2000  
4
ZXT10N50DE6  
TYPICAL CHARACTERISTICS  
ISSUE 1 - SEPTEMBER 2000  
5
ZXT10N50DE6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millim e tre s  
Min  
In ch e s  
Min  
Ma x  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Ma x  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e 1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3701-04 Metroplaza, Tower 1  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
© Zetex plc 2000  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - SEPTEMBER 2000  
6
厂商 型号 描述 页数 下载

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DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

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DIODES

 		UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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