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UZXMN10A09KTC

型号:

UZXMN10A09KTC

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

194 K

ZXMN10A09K  
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK  
SUMMARY  
=100V : R  
V
=0.085 ; I =7.7A  
D
(BR)DSS  
DS(on)  
DESCRIPTION  
This new generation of Trench MOSFETs from Zetex utilizes a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage power  
m anagem ent applications.  
FEATURES  
DPAK  
Low on-resistance  
Fast switching speed  
Low gate drive  
D-Pak (T0-252) package  
APPLICATIONS  
DC-DC Converters  
Power m anagem ent functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
PINOUT  
ZXMN10A09KTC  
13”  
16m m  
2,500 units  
DEVICE MARKING  
ZXMN  
10A09K  
TOP VIEW  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
1
ZXMN10A09K  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
100  
UNIT  
V
Dra in -s o u rce vo lta g e  
Ga te -s o u rce vo lta g e  
V
DS S  
GS  
V
±20  
V
(b )  
(b )  
(a )  
Co n tin u o u s d ra in cu rre n t @ V =10V; T =25°C  
I
7.7  
6.2  
5
A
A
A
GS  
A
D
@ V =10V; T =70°C  
GS  
A
@V =10V; T =25°C  
GS  
A
(c)  
Pu ls e d d ra in cu rre n t  
I
I
I
27  
11  
27  
A
A
A
DM  
(b )  
Co n tin u o u s s o u rce cu rre n t (b o d y d io d e )  
S
(c)  
Pu ls e d s o u rce cu rre n t (b o d y d io d e )  
S M  
(a )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
P
P
4.3  
W
D
D
D
Lin e a r d e ra tin g fa cto r  
34.4  
m W/°C  
(b )  
(d )  
Po w e r d is s ip a tio n a t T =25°C  
A
10.1  
80.8  
W
Lin e a r d e ra tin g fa cto r  
m W/°C  
Po w e r d is s ip a tio n a t T =25°C  
A
2.15  
17.2  
W
Lin e a r d e ra tin g fa cto r  
m W/°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
29  
UNIT  
°C/W  
°C/W  
°C/W  
(a )  
J u n ctio n to a m b ie n t  
R
R
R
J A  
J A  
J A  
(b )  
J u n ctio n to a m b ie n t  
12.3  
58  
(d )  
J u n ctio n to a m b ie n t  
NOTES  
(a) For a device surface m ounted on 50m m x 50m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(b) For a device surface m ounted on FR4 PCB m easured at t Յ 10 sec.  
(c) Repetitive rating 50m m x 50m m x 1.6m m FR4 PCB, D=0.02 pulse width=300s - pulse width lim ited by m axim um junction tem perature.  
(d)For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
2
ZXMN10A09K  
TYPICAL CHARACTERISTICS  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
3
ZXMN10A09K  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
PARAMETER  
S YMBOL  
MIN.  
TYP. MAX. UNIT CONDITIONS  
S TATIC  
Dra in -s o u rce b re a kd o w n vo lta g e  
Ze ro g a te vo lta g e d ra in cu rre n t  
Ga te -b o d y le a ka g e  
V
100  
V
A  
nA  
V
I = 250A, V =0V  
D GS  
(BR)DS S  
I
I
1
V
= 100V, V =0V  
GS  
DS S  
DS  
GS  
100  
V
=±20V, V =0V  
DS  
GS S  
Ga te -s o u rce th re s h o ld vo lta g e  
Static drain-source on-state resistance  
V
R
2.0  
4.0  
I =250A, V =V  
D DS GS  
GS (th )  
(1)  
0.085  
0.100  
V
= 10V, I = 4.6A  
D
DS (o n )  
GS  
GS  
DS  
V
V
= 6V, I = 4.2A  
D
(1) (3)  
Fo rw a rd tra n s co n d u cta n ce  
g
10.7  
S
= 15V, I = 4.6A  
D
fs  
(3)  
DYNAMIC  
In p u t ca p a cita n ce  
C
C
C
1313  
83  
pF  
pF  
pF  
is s  
V
= 50V, V  
=0V  
DS  
GS  
Ou tp u t ca p a cita n ce  
o s s  
rs s  
f=1MHz  
Re ve rs e tra n s fe r ca p a cita n ce  
56  
(2) (3)  
S WITCHING  
Tu rn -o n -d e la y tim e  
Ris e tim e  
t
t
t
t
6.8  
5.3  
ns  
ns  
ns  
ns  
nC  
d (o n )  
V
R
= 50V, I = 1A  
D
r
DD  
6.0, V = 10V  
G
GS  
Tu rn -o ff d e la y tim e  
Fa ll tim e  
27.5  
12.3  
17.2  
d (o ff)  
f
To ta l g a te ch a rg e  
Q
V
= 50V, V = 6V  
g
DS GS  
I = 4.6A  
D
To ta l g a te ch a rg e  
Q
Q
Q
26  
5.6  
7.6  
nC  
nC  
nC  
g
V
= 50V, V = 10V  
GS  
DS  
Ga te -s o u rce ch a rg e  
Ga te d ra in ch a rg e  
S OURCE-DRAIN DIODE  
g s  
g d  
I = 4.6A  
D
(1)  
Dio d e fo rw a rd vo lta g e  
V
0.85  
0.95  
V
T =25°C, I = 4.7A,  
j F  
S D  
V
=0V  
GS  
(3)  
Re ve rs e re co ve ry tim e  
t
40  
62  
ns  
rr  
T =25°C, I = 3A,  
j
S
(3)  
d i/d t=100A/s  
Re ve rs e re co ve ry ch a rg e  
Q
nC  
rr  
NOTES  
(1) Measured under pulsed conditions. Pulse width Յ 300s; duty cycle Յ 2%.  
(2) Switching characteristics are independent of operating junction tem perature.  
(3) For design aid only, not subject to production testing.  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
4
ZXMN10A09K  
TYPICAL CHARACTERISTICS  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
5
ZXMN10A09K  
TYPICAL CHARACTERISTICS  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
6
ZXMN10A09K  
PACKAGE OUTLINE  
Controlling dim ensions are in m illim eters. Approxim ate  
conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
DIM  
Inches  
Millim eters  
Inches  
Min Max  
0.090 BSC  
DIM  
Min  
2.18  
Max  
2.38  
0.127  
0.89  
1.114  
5.46  
0.609  
0.584  
6.22  
Min  
Max  
0.094  
0.005  
0.035  
0.045  
0.215  
0.024  
0.023  
0.245  
Min  
Max  
A
A1  
b
0.086  
e
H
2.30 BSC  
9.40  
1.40  
10.41  
1.78  
0.370  
0.055  
0.410  
0.070  
0.635  
0.762  
5.20  
0.457  
0.457  
5.97  
5.20  
6.35  
4.32  
0.025  
0.030  
0.205  
0.018  
0.018  
0.235  
0.205  
0.250  
0.170  
L
b2  
b3  
c
L1  
L2  
L3  
L4  
L5  
1Њ  
⍜Њ  
2.74 REF  
0.051 BSC  
0.108 REF  
0.020 BSC  
0.89  
1.27  
1.01  
1.52  
10؇  
0.035  
0.050  
0.040  
0.060  
10  
c2  
D
0.635  
1.14  
0؇  
0.025  
0.045  
0
D1  
E
6.73  
0.265  
0؇  
15؇  
0؇  
15  
E1  
© Zetex Sem iconductors plc 2005  
Europe  
Am ericas  
Asia Pacific  
Corporate Headquarters  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Sem iconductors plc  
Zetex Technology Park  
Chadderton, Oldham , OL9 9LL  
United Kingdom  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to www.zetex.com  
ISSUE 6 - J ANUARY 2005  
S E M IC O N D U C T O R S  
7
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