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UZX5T869GTA

型号：

UZX5T869GTA

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

6 页

PDF大小：

121 K

下载PDF手册
ZX5T869G  
25V NPN LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BVCEO = 25V : RSAT = 27m ; IC = 7A  
DESCRIPTION  
Packaged in the SOT223 outline this new 5th generation low saturation 25V  
NPN transistor offers extrem ely low on state losses m aking it ideal for use in  
DC-DC circuits and various driving and power m anagem ent functions.  
FEATURES  
SOT223  
• Extem ely low equivalent on-resistance; RSAT = 27m at 6.5A  
• 7 am ps continuous current  
• Up to 20 am ps peak current  
• Very low saturation voltages  
• Excellent hFE characteristics up to 20 am ps  
APPLICATIONS  
• DC - DC converters  
• MOSFET gate drivers  
• Charging circuits  
• Power switches  
• Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZX5T869GTA  
ZX5T869GTC  
7”  
12m m  
em bossed  
1000 units  
4000 units  
13”  
DEVICE MARKING  
TOP VIEW  
• X5T869  
ISSUE 1 - NOVEMBER 2003  
1
S E M IC O N D U C T O R S  
ZX5T869G  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
S YMBOL  
LIMIT  
UNIT  
Co lle cto r-b a s e vo lta g e  
BV  
BV  
BV  
60  
V
CBO  
CEO  
EBO  
Co lle cto r-e m itte r vo lta g e  
Em itte r-b a s e vo lta g e  
25  
V
7.5  
V
A
Co n tin u o u s co lle cto r cu rre n t  
I
7
C
Pe a k p u ls e cu rre n t  
(a )  
I
20  
3.0  
A
CM  
Po w e r d is s ip a tio n a t T =25°C  
A
P
W
D
Lin e a r d e ra tin g fa cto r  
24  
m W/°C  
W
(b )  
Po w e r d is s ip a tio n a t T =25°C  
A
P
1.6  
D
Lin e a r d e ra tin g fa cto r  
12.8  
m W/°C  
°C  
Op e ra tin g a n d s to ra g e te m p e ra tu re ra n g e  
T , T  
-55 to +150  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
42  
UNIT  
°C/W  
°C/W  
(a )  
J u n ctio n to a m b ie n t  
R
R
⍜J A  
⍜J A  
(b )  
J u n ctio n to a m b ie n t  
78  
NOTES  
(a) For a device surface m ounted on 52m m x 52m m x 1.6m m FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.  
(b) For a device surface m ounted on 25m m x 25m m x 1.6m m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
ISSUE 1 - NOVEMBER 2003  
2
S E M IC O N D U C T O R S  
ZX5T869G  
CHARACTERISTICS  
ISSUE 1 - NOVEMBER 2003  
3
S E M IC O N D U C T O R S  
ZX5T869G  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
PARAMETER  
S YMBOL  
MIN.  
60  
TYP. MAX. UNIT CONDITIONS  
Co lle cto r-b a s e b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Em itte r-b a s e b re a kd o w n vo lta g e  
Co lle cto r cu t-o ff cu rre n t  
BV  
BV  
BV  
BV  
105  
105  
35  
V
V
I =100␮A  
C
CBO  
CER  
CEO  
EBO  
60  
I =1␮A, RBՅ1k⍀  
C
25  
V
I =10m A*  
C
7.5  
8.2  
V
I =100␮A  
E
I
20  
0.5  
20  
n A  
␮A  
n A  
␮A  
n A  
V
=50V  
CB  
CBO  
V
=50V, T  
=100ЊC  
=100ЊC  
CB  
amb  
Co lle cto r cu t-o ff cu rre n t  
I
V =50V  
CB  
CER  
RՅ1k⍀  
0.5  
10  
V =50V, T  
CB  
amb  
Em itte r cu t-o ff cu rre n t  
I
V
=6V  
EBO  
EB  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
26  
40  
m V I =500m A, I =10m A*  
C B  
CE(S AT)  
65  
m V I =1A, I =100m A*  
C B  
51  
98  
80  
m V I =1A, I =10m A*  
C B  
150  
220  
m V I =2A, I =10m A*  
C B  
173  
m V I =6.5A, I =150m A*  
C B  
Ba s e -e m itte r s a tu ra tio n vo lta g e  
Ba s e -e m itte r tu rn -o n vo lta g e  
V
V
1010 1080  
m V I =6.5A, I =150m A*  
C B  
BE(S AT)  
BE(ON)  
FE  
885  
400  
450  
300  
90  
980  
m V I =6.5A, V =1V*  
C CE  
S ta tic fo rw a rd cu rre n t tra n s fe r ra tio  
h
300  
300  
200  
40  
I =10m A, V =1V*  
C CE  
I =1A, V =1V*  
C
CE  
I =7A, V =1V*  
C
CE  
I =20A, V =1V*  
C
CE  
Tra n s itio n fre q u e n cy  
f
150  
I =100m A, V =10V  
T
C
CE  
f=50MHz  
Ou tp u t ca p a cita n ce  
S w itch in g tim e s  
C
48  
33  
p F  
n s  
V
=10V, f=1MHz*  
OBO  
CB  
t
t
I =1A, V =10V,  
ON  
C
CC  
464  
I
=-I =100m A  
OFF  
B1 B2  
* Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.  
ISSUE 1 - NOVEMBER 2003  
4
S E M IC O N D U C T O R S  
ZX5T869G  
TYPICAL CHARACTERISTICS  
ISSUE 1 - NOVEMBER 2003  
5
S E M IC O N D U C T O R S  
ZX5T869G  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
Controlling dim ensions are in m illim eters. Approxim ate conversions are given in inches  
PACKAGE DIMENSIONS  
Millim eters  
Inches  
Millim eters  
Min Max  
2.30 BSC  
4.60 BSC  
Inches  
Min Max  
DIM  
DIM  
Min  
-
Max  
Min  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
A
A1  
b
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
0.0905 BSC  
0.181 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
© Zetex plc 2003  
Europe  
Am ericas  
Asia Pacific  
Zetex plc  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Fields New Road  
Chadderton  
Streitfeldstraß e 19  
D-81673 München  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
3701-04 Metroplaza Tower 1  
Hing Fong Road  
Oldham , OL9 8NP  
United Kingdom  
Kwai Fong  
Hong Kong  
Germ any  
USA  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Th e s e o ffice s a re s u p p o rte d b y a g e n ts a n d d is trib u to rs in m a jo r co u n trie s w o rld -w id e .  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to w w w .zetex.com  
ISSUE 1 - NOVEMBER 2003  
6
S E M IC O N D U C T O R S  
厂商 型号 描述 页数 下载

DIODES

 		UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T2E6TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

 		UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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