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UZXTD09N50DE6TC

型号：

UZXTD09N50DE6TC

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

8 页

PDF大小：

286 K

下载PDF手册
ZXTD09N50DE6  
SuperSOT  
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR  
SUMMARY  
V
CEO=50V; RSAT = 160m ; IC= 1A  
DESCRIPTION  
A dual NPN low saturation transistor combination contained in a single 6 lead  
SOT23 package. Each transistor is the equivalent to the ZUMT619 device.  
FEATURES  
SOT23-6  
•
•
•
•
Low Equivalent On Resistance  
Low Saturation Voltage  
C1  
C2  
IC=1A Continuous Collector Current  
SOT23-6 package  
B1  
B2  
APPLICATIONS  
•
•
•
LCD Backlighting inverter circuits  
Boost functions in DC-DC converters  
E1  
E2  
ORDERING INFORMATION  
DEVICE  
REEL SIZE TAPE WIDTH  
QUANTITY  
PER REEL  
(inches)  
(mm)  
ZXTD09N50DE6TA  
ZXTD09N50DE6TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
C1  
E1  
C2  
B1  
E2  
B2  
13  
DEVICE MARKING  
D619  
Top View  
ISSUE 2 - JUNE 2001  
1
ZXTD09N50DE6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
V
V
V
CBO  
CEO  
EBO  
50  
V
5
V
I
I
I
2
A
CM  
Continuous Collector Current  
Base Current  
1.0  
200  
A
C
B
mA  
Power Dissipation at TA=25°C (a)(d)  
Linear Derating Factor  
P
P
P
0.90  
7.2  
W
D
D
D
mW/°C  
Power Dissipation at TA=25°C (a)(e)  
Linear Derating Factor  
1.1  
8.8  
W
mW/°C  
Power Dissipation at TA=25°C (b)(d)  
Linear Derating Factor  
1.7  
13.6  
W
mW/°C  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Junction to Ambient (a)(d)  
Junction to Ambient (b)(d)  
Junction to Ambient (a)(e)  
R
R
R
139  
73  
°C/W  
°C/W  
°C/W  
θJA  
θJA  
θJA  
113  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
Impedance graph.  
(d) For device with one active die.  
(e) For device with two active die running at equal power.  
ISSUE 2 - JUNE 2001  
2
ZXTD09N50DE6  
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNIT  
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
50  
V
I = 100µA  
(BR)CBO  
C
Collector-Emitter  
V
50  
5
V
I = 10mA*  
C
(BR)CEO  
(BR)EBO  
CBO  
Breakdown Voltage  
Emitter-Base Breakdown V  
Voltage  
V
I = 100µA  
E
Collector Cut-Off Current I  
10  
nA  
V
= 40V  
CB  
EB  
Emitter Cut-Off Current  
I
I
10  
10  
nA  
nA  
V
V
= 4V  
= 40V  
EBO  
CES  
Collector Emitter Cut-Off  
Current  
CES  
Collector-Emitter  
Saturation Voltage  
V
24  
35  
mV  
mV  
mV  
mV  
I = 100mA, I = 10mA*  
C B  
CE(sat)  
60  
80  
I = 250mA, I = 10mA*  
C B  
120  
160  
200  
270  
I = 500mA, I = 10mA*  
C B  
I = 1A, I = 50mA*  
C
B
Base-Emitter  
V
V
h
940  
1100  
mV  
I = 1A, I = 50mA*  
C B  
BE(sat)  
BE(on)  
FE  
Saturation Voltage  
Base-Emitter Turn-On  
Voltage  
850  
1100  
mV  
I = 1A, V = 2V*  
CE  
C
Static Forward Current  
Transfer  
Ratio  
200  
300  
200  
75  
420  
450  
350  
130  
60  
I =10mA, V = 2V*  
C CE  
I = 100mA, V =2 V*  
C
CE  
I = 500mA, V =2V*  
C CE  
I = 1A, V = 2V*  
C
CE  
20  
I = 1.5A, V =2 V*  
C CE  
Transition  
Frequency  
f
215  
MHz  
I = 50mA, V =10V  
T
C
CE  
f= 100MHz  
Output Capacitance  
Turn-On Time  
C
10  
pF  
ns  
ns  
V
= 10V, f=1MHz  
CB  
obo  
(on)  
(off)  
t
t
150  
425  
V
=10 V, I = 1A  
CC C  
=I =100mA  
I
B1 B2  
Turn-Off Time  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%  
ISSUE 2 - JUNE 2001  
3
ZXTD09N50DE6  
TYPICAL CHARACTERISTICS  
0.4  
0.4  
+25°C  
IC/IB=50  
0.3  
0.2  
0.1  
0
0.3  
IC/IB=10  
IC/IB=50  
IC/IB=100  
-55°C  
+25°C  
+100°C  
+150°C  
0.2  
0.1  
0
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
IC  
- Collector Current (A)  
IC  
- Collector Current (A)  
VCE(sat) v I  
C
VCE(sat) v IC  
1.0  
0.8  
0.6  
0.4  
0.2  
0
IC/IB=50  
VCE=2V  
800  
600  
400  
200  
0
+100°C  
+25°C  
-55°C  
-55°C  
+25°C  
+100°C  
+150°C  
1m  
10m  
100m  
1
10  
1m  
10m  
100m  
1
10  
10  
4
IC  
- Collector Current (A)  
IC - Collector Current (A)  
h
FE v I  
C
V
BE(sat) v I  
C
1.15  
0.9  
10  
1
0.6  
0.3  
0
DC  
1s  
100m  
-55°C  
+25°C  
+100°C  
+150°C  
100ms  
10ms  
1ms  
100µs  
10m  
100m  
1
10  
100  
1m  
10m  
100m  
1
IC  
- Collector Current (A)  
BE(on) v I  
VCE - Collector Emitter Voltage (V)  
V
C
Safe Operating Area  
ISSUE 2 - JUNE 2001  
ZXTD09N50DE6  
ISSUE 2 - JUNE 2001  
5
ZXTD09N50DE6  
ISSUE 2 - JUNE 2001  
6
ZXTD09N50DE6  
ISSUE 2 - JUNE 2001  
7
ZXTD09N50DE6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millimetres  
Inches  
Min  
Min  
Max  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Max  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Suite 315  
Zetex (Asia) Ltd.  
3701-04 Metroplaza, Tower 1 agents and distributors in  
These are supported by  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Highway Hing Fong Road,  
Hauppauge NY11788  
USA  
major countries world-wide  
Zetex plc 2001  
Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
Telephone: (631) 543-7100  
Fax: (631) 864-7630  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for  
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves  
the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 2 - JUNE 2001  
8
厂商 型号 描述 页数 下载

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 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

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 		UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

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 		UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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