找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

UZXSC100X8

型号:

UZXSC100X8

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

17 页

PDF大小:

306 K

ZXSC100  
SINGLE CELL DC-DC CONVERTER SOLUTION  
DESCRIPTION  
Th e ZXS C1 0 0 s e r ie s is d e s ig n e d fo r DC-DC  
applications where step-up voltage conversion from  
very low input voltages is required. These applications  
m ainly operate from single nickel cadm ium or nickel  
m etal hydride battery cells.  
The IC and discrete com bination offers the ultim ate  
cost vs perform ance solution for single cell DC-DC  
conversion.  
The circuit can start up under full load with regulation  
m aintained down to an input voltage of only 0.926  
volts. The solution configuration ensures optim um  
efficiency over a wider range of load currents, several  
circu it co n fig u ra tio n s a re p o s s ib le w ith p o w e r  
dissipation up to 2W. The step up output voltage is  
e a s ily p ro g ra m m e d w ith e xte rn a l re s is to rs , th e  
non-synchronous architecture and SuperSOT4™  
device enabling an output voltage down to the input  
voltage level. For best perform ance the ZXSC100  
quiescent current is a sm all 150µA ensuring m inim um  
battery drain in no load conditions.  
FEATURES  
APPLICATIONS(continued)  
Efficiency m aintained over a wide range of input  
voltages and load currents  
82% efficiency @ VBATT=1V  
Hand held instrum ents  
Portable m edical equipm ent  
Solar powered equipm ent  
Startup under full load  
Minim um operating input voltage VBATT=0.926V  
Adjustable output voltage down to VBATT  
TYPICAL APPLICATION CIRCUIT  
L1  
D1  
Quiescent current typically 150µA referred to  
VBATT  
3.3V/0.1A  
input voltage  
ZHCS1000  
MSOP8 package  
SO8 package  
R1  
Q1  
R3  
FMMT617  
U1  
EM  
C3  
APPLICATIONS  
Cordless telephones  
MP3 players  
VDRIVE  
ISENSE  
FB  
C2  
BAS  
RE  
VCC  
GND  
ZXSC100  
PDA  
Pagers  
R2  
R4  
C1  
Battery backup supplies  
Electronic toothbrush  
GPS receivers  
Digital cam era  
Palm top com puters  
ORDERING INFORMATION  
DEVICE  
Package  
Partm arking  
Reel  
size  
Tape  
w idth  
Quantity per  
reel  
ZXS C100X8  
MS OP8  
ZXS C100  
ZXS C100  
7”  
12m m  
1,000  
500  
ZXS C100N8 S O8  
7”  
12m m  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
1
ZXSC100  
ABSOLUTE MAXIMUM RATING  
Supply voltage  
Maxim um voltage other pins  
Power dissipation (25°C)  
MSOP8  
0.3 to 3.5V  
0.3 to V +0.3V  
CC  
Operating tem perature  
Storage tem perature  
J unction tem perature  
0 to 70°C  
-55 to 150°C  
150°C  
500m W  
780m W  
SO8  
ELECTRICAL CHARACTERISTICS (Unless otherwise stated) VCC=1.2V, TA = 25°C  
Sym bol  
Param eter  
Conditions  
Min.  
Typ.  
Max. Units  
I
I
Qu ie s ce n t cu rre n t  
No t s w itch in g  
150  
200  
10  
µA  
m A  
V
CC  
Ba s e d rive cu rre n t  
V
V
= V  
CC  
5
DRIVE  
RE  
RE  
V
V
V
V
o /p vo lta g e  
= V , I  
= 5m A  
V
- 0.17  
DRIVE  
DRIVE  
CC DRIVE  
CC  
Fe e d b a ck vo lta g e  
708  
12  
730  
752  
24  
m V  
m V  
FB  
Ou tp u t cu rre n t re fe re n ce  
vo lta g e  
17.5  
IS ENS E  
T
I
vo lta g e te m p co .  
0.4  
30  
%/°C  
m V  
CVIS ENS E  
S ENS E  
V
Drive cu rre n t re fe re n ce  
vo lta g e  
Measured with respect to V  
20  
40  
DREF  
CC  
T
V
te m p co .  
1
%/°C  
V
CVDREF  
DREF  
V
V
S ta rtu p vo lta g e  
An y o u tp u t lo a d  
1.01  
1.06  
0.98  
1.1  
1
CC(S RT)  
Min im u m o p e ra tin g  
in p u t vo lta g e  
0.926  
V
CC(m in )  
V
S u p p ly s ta rt u p to  
80  
m V  
CC(h ys )  
s h u td o w n h ys te re s is  
I
I
Fe e d b a ck in p u t cu rre n t  
100  
4
200  
5.5  
n A  
µA  
V
FB  
I
in p u t cu rre n t  
V
= 0V  
3
IS ENS E  
S ENS E  
IS ENS E  
V
V
Min im u m o u tp u t vo lta g e  
V
CC  
O(m in )  
O(m a x)  
OFF  
(1)  
Ma xim u m o u tp u t vo lta g e FMMT617a s p a s s e le m e n t  
Dis ch a rg e p u ls e w id th  
20  
4
V
T
1.7  
3
µs  
(1)  
De p e n d s o n b re a kd o w n vo lta g e o f p a s s d e vice . S e e FMMT617 d a ta s h e e t  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
2
ZXSC100  
OPERATING CONDITIONS  
Sym bol  
Param eter  
Conditions  
Min  
Typ  
Max  
Units  
3
F
Re co m m e n d e d o p e ra tin g fre q u e n cy  
200  
kHz  
OS C  
2 These param eters guaranteed by design and characterization  
3
Operating frequency is application circuit dependant. See applications section  
FMMT617  
For the circuits described in the applications section, Zetex FMMT617 is the recom m ended pass transistor. The  
following indicates outline data for the transistor, m ore detailed inform ation can be found at www.zetex.com  
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise stated)  
A
PARAMETER  
S YMBOL  
MIN.  
TYP.  
MAX. UNIT CONDITIONS  
Co lle cto r-e m itte r b re a kd o w n vo lta g e  
Co lle cto r-e m itte r s a tu ra tio n vo lta g e  
V
V
15  
18  
V
I =10m A*  
C
(BR)CEO  
CE(s a t)  
8
70  
14  
m V  
m V  
m V  
I =0.1A, I =10m A*  
C B  
100  
200  
I =1A, I =10m A*  
C B  
150  
I =3A, I =50m A*  
C B  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ZHCS1000  
For the circuits described in the applications section Zetex ZHCS1000 is the recom m ended Schottky diode. The  
following indicates outline data for the ZHCS, m ore detailed inform ation is available at www.zetex.com  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated)  
am b  
MIN.  
PARAMETER  
S YMBOL  
TYP.  
MAX.  
UNIT  
m V  
µA  
CONDITIONS  
Fo rw a rd vo lta g e  
Re ve rs e cu rre n t  
Re ve rs e re co ve ry tim e  
V
I
500  
I =1A  
F
F
100  
V =30V  
R
R
t
12  
n s  
Switched from  
rr  
I
= 500m A to  
= 500m A.  
F
I
R
Measured at I =50m A  
R
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
3
ZXSC100  
TYPICAL CHARACTERISTICS  
2.0  
1.5  
300  
250  
200  
150  
1.0  
0.5  
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
100  
1.0  
-10  
0
10  
20  
30  
40  
50  
60  
70  
80  
1.5  
2.0  
2.5  
Tem perature (°C)  
Output Voltage v Tem perature  
Input Voltage (V)  
Quiescent Current v Input Voltage  
2.0  
1.5  
5.0  
2.5  
1.0  
0.5  
0.0  
0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-5.0  
1.0  
0
50m  
100m  
1.5  
2.0  
2.5  
Output Current (A)  
Input Voltage (V)  
Load Regulation  
Line Regulation  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
4
ZXSC100  
DEVICE DESCRIPTION  
Th e ZXS C100 is n o n -s yn ch ro n o u s PFM, DC-DC  
controller IC which, when com bined with a high  
p e rfo rm a n ce e xte rn a l tra n s is to r, e n a b le s th e  
production of a high efficiency boost converter for use  
in single cell applications. A block diagram is shown  
for the ZXSC100 in Figure 1.  
The driver circuit supplies the external switching  
tra n s is to r w ith  
a d e fin e d cu rre n t, w h ich is  
p ro g ra m m e d b y a n e xte rn a l re s is to r co n n e cte d  
between the RE pin and VCC. The internal reference  
voltage for the circuit is 25m V below VCC. To m axim ise  
efficiency the external transistor is switched quickly,  
typically being forced off within 20ns.  
VCC  
In higher power applications m ore current can be  
supplied to the switching transistor by using a further  
external com ponent. The driver transistor in the IC can  
be bypassed with the addition of a discrete PNP. More  
inform ation on this circuit configuration can be found  
in the applications section.  
Drive  
Shutdown  
RE  
Com p1  
EM  
I
R1  
R2  
BAS  
VREF  
VDRIVE  
Com p2  
ISENSE  
FB  
GND  
Figure 1  
ZXSC100 Block Diagram  
A shutdown circuit turns the device on or off at VCC=1V  
with a hysteresis of typically 80m V. At start up,  
co m p a ra to r Co m p 1 tu rn s th e d rive r circu it a n d  
therefore the external switching transistor on. This  
circuit will rem ain active until the feedback voltage at  
the pin FB rises above VREF, which is set to 730m V. An  
external resistive divider on the FB pin sets the output  
voltage level.  
Com parator Com p2 forces the driver circuit and the  
external switching transistor off, if the voltage at  
ISENSE exceeds 25m V. The voltage at ISENSE is taken  
from a current sense resistor connected in series with  
the em itter of the switching transistor.  
A m onostable following the output of Com p2 extends  
the turn-off tim e of the output stage by a m inim um of  
2us. This ensures that there is sufficient tim e to  
discharge the inductor coil before the next on period.  
The AND gate between the m onostable and Com p1  
output ensures that the switching transistor always  
rem ains on until the ISENSE threshold is reached and  
th a t th e m in im u m d is ch a rg e p e rio d is a lw a ys  
asserted. The pulse width is constant, the pulse  
frequency varies with the output load.  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
5
ZXSC100  
PIN DESCRIPTIONS  
Pin  
No .  
Na m e  
EM  
De s crip t io n  
1
2
3
Em itte r o f in te rn a l d rive tra n s is to r. Co n n e ct to RE in lo w e r p o w e r a p p lica tio n s . Mu s t b e  
u n co n n e cte d in h ig h e r p o w e r a p p lica tio n s  
BAS  
RE  
No t co n n e cte d in lo w e r p o w e r a p p lica tio n s . Co n n e ct to b a s e o f e xte rn a l d rive tra n s is to r  
in h ig h e r p o w e r a p p lica tio n s  
Drive cu rre n t s e n s e in p u t. In te rn a l th re s h o ld vo lta g e s e t 25m V b e lo w V . Co n n e cte d  
CC  
e xte rn a l s e n s e re s is to r. Co n n e ct e m itte r o f e xte rn a l d rive tra n s is to r in h ig h e r p o w e r  
a p p lica tio n s  
4
5
V
S u p p ly vo lta g e , g e n e ra lly NiMH, NiCd s in g le ce ll  
CC  
I
In d u cto r cu rre n t s e n s e in p u t. In te rn a l th re s h o ld vo lta g e s e t to 25m V. Co n n e ct e xte rn a l  
s e n s e re s is to r  
S ENS E  
6
7
FB  
Fe e d b a ck s e n s e . In te rn a l th re s h o ld s e t to 730m V. Co n n e ct e xte rn a l re s is tive d ivid e r to  
o u tp u t vo lta g e  
G
Gro u n d  
ND  
V
8
EM  
1
2
DRIVE  
BAS  
G
7
ND  
RE  
FB  
3
4
6
V
5
I
CC  
SENSE  
REFERENCE DESIGNS  
Three typical DC-DC step-up converter applications  
for the ZXSC300 are shown. Firstly with a m axim um  
output power of 0.33W, secondly with a m axim um  
output power of 1.0W and finally driving white LED’s in  
a flashlight application.  
Low pow er solution (330m W) efficiency  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
6
ZXSC100  
Low pow er solution, VOUT=3.3V, PL=0.33W  
L1  
D1  
VBATT  
3.3V/0.1A  
ZHCS1000  
R1  
Q1  
R3  
FMMT617  
U1  
C3  
VDRIVE  
ISENSE  
FB  
EM  
C2  
BAS  
RE  
VCC  
GND  
ZXSC100  
R2  
R4  
C1  
MATERIALS LIST  
Re f  
U1  
Q1  
D1  
R1  
R2  
R3  
R4  
C1  
C2  
C3  
L1  
Va lu e  
Pa rt Nu m b e r  
ZXS C100X8  
FMMT617  
Ma n u fa ct u re r  
Ze te x Plc  
Ze te x Plc  
Ze te x Plc  
Va rio u s  
Va rio u s  
Va rio u s  
Va rio u s  
AVX  
Co m m e n t s  
N/A  
S in g le ce ll co n ve rte r, MS OP8  
Lo w VCE(s a t) NPN, S OT23  
1A S h o ttky d io d e  
0805 S ize  
20V, 13m , 7A  
0.5V, 2A  
0*  
ZHCS 1000  
Ge n e ric  
Ge n e ric  
0805 S ize  
33m Ω  
110kΩ  
30kΩ  
Ge n e ric  
0805 S ize  
Ge n e ric  
0805 S ize  
220µF  
220µF  
1n F  
TPS D227M010R0100  
TPS D227M010R0100  
Ge n e ric  
Lo w ES R ta n ta lu m ca p a cito r  
Lo w ES R ta n ta lu m ca p a cito r  
0805 S ize  
AVX  
Va rio u s  
Co ilcra ft  
22µH  
D01608C-223  
D03316P-223  
Lo w p ro file S MT  
* Note: Refer to External Transistor base drive selection in the Applications Section.  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
7
ZXSC100  
Higher pow er solution, VOUT=3.3V, PL=1W  
L1  
D1  
VBATT  
3.3V/0.33A  
ZHCS1000  
R1  
Q2  
C3  
Q1  
R3  
R4  
FMMT617  
U1  
VDRIVE  
ISENSE  
FB  
EM  
C2  
BAS  
RE  
VCC  
GND  
ZXSC100  
R2  
C1  
MATERIALS LIST  
Re f  
U1  
Q1  
Q2  
D1  
R1  
R2  
R3  
R4  
C1  
C2  
C3  
L1  
Va lu e  
Pa rt Nu m b e r  
ZXS C100X8  
FMMT617  
2N2907  
Ma n u fa ct u re r  
Ze te x Plc  
Ze te x Plc  
Va rio u s  
Ze te x Plc  
Va rio u s  
Va rio u s  
Va rio u s  
Va rio u s  
AVX  
Co m m e n t s  
N/A  
S in g le ce ll co n ve rte r, MS OP8  
Lo w VCE(S AT) NPN, S OT23  
S m a ll s ig n a l tra n s is to r  
1A S h o ttky d io d e  
0805 S ize  
20V, 13m , 7A  
N/A  
0.5V, 2A  
3.3*  
33m Ω  
110kΩ  
30kΩ  
ZHCS 1000  
Ge n e ric  
Ge n e ric  
0805 S ize  
Ge n e ric  
0805 S ize  
Ge n e ric  
0805 S ize  
220µF  
220µF  
1n F  
TPS D227M010R0100  
TPS D227M010R0100  
Ge n e ric  
Lo w ES R ta n ta lu m ca p a cito r  
Lo w ES R ta n ta lu m ca p a cito r  
0805 S ize  
AVX  
Va rio u s  
Co ilcra ft  
22µH  
D01608C-223  
D03316P-223  
Lo w p ro file S MT  
* Note: Refer to External Transistor base drive selection in the Applications Section.  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
8
ZXSC100  
OTHER APPLICATIONS  
The circuit itself is very sim ple, a m inim um num ber  
of com ponents are used and they are all sm all size.  
The ZXSC uses the very sm all MSOP8 package, the  
pass transistor is SOT23. No capacitors are required  
as the circuit is stable under all conditions. The  
inductor recom m ended is a low cost m iniature  
com ponent.  
L1  
VBATT  
100µH  
Q1  
No com prom ise is m ade on efficiency however. In a  
standard configuration efficiency well over 80% can  
b e a ch ie ve d . With ca re fu l in d u cto r s e le ctio n  
efficiency over 90% is possible.  
FMMT617  
U1  
D1  
VDRIVE  
ISENSE  
FB  
EM  
BAS  
RE  
WHITE LED  
The inherent flexibility of the ZXSC circuit m eans  
that parallel or series LEDs can be driven depending  
on application needs. A sim ple m odification to the  
application circuit m eans that the m axim um pulse  
c u r r e n t c a n b e p r o g r a m m e d t o m a t c h t h e  
characteristics of the chosen LED load, pulse current  
in the range 10m A to 3A and beyond can be easily  
achieved.  
R2  
VCC  
GND  
0.22R  
ZXSC100  
Driving w hite LED’s in a flashlight application  
An application note (AN33) is available describing  
va rio u s circu its fo r d rivin g w h ite LEDs . Th is  
application note includes details of circuits that  
optim ise battery life, m axim ise brightness and can  
be constructed for m inim al cost. Contact your local  
Zetex office for further details.  
The ZXSC100 solution is ideal for LED lam p driving  
applications operating from a single cell. In principal  
conversion from 1.2V to the 3.6V, typically required by  
white LEDs, is necessary. Load currents in the region of  
20m A to 50m A being required for a single LED elem ent.  
To m inim ise size, weight and cost, single cell operation  
is an advantage. The ZXSC is well m atched to single cell  
NiCd and NiMH characteristics. The circuit will turn on at  
1.06V, to m axim ise the life the battery can offer, the  
converter does not turn off until the battery voltage falls  
to 0.93V.  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
9
ZXSC100  
APPLICATIONS INFORMATION  
The following section is a design guide for optim um  
converter perform ance.  
Schottky diode selection  
As with the switching transistor the Schottky rectifier  
diode has a m ajor im pact on the DC-DC converter  
efficiency. A Schottky diode with a low forward  
voltage and fast recovery tim e should be used for this  
application. The m ajority of losses in the diode are,  
on-state’ and can be calculated by using the form ula  
below:  
Sw itching transistor selection  
The choice of switching transistor has a m ajor im pact  
on the DC-DC converter efficiency. For optim um  
perform ance, a bipolar transistor with low VCE(SAT)  
and high gain is required. The m ajority of losses in the  
transistor are, on-state’ and can be calculated by  
using the form ula below:  
IAV x V  
x TDIS  
F(MAX)  
PD1  
=
(TOn + TOFF  
)
((IAVxVCE(SAT)) + ( I x VBE(SAT)))xTON  
B
PQ1  
=
(TON + TOFF)  
)
I PK  
where IAV  
=
2
I PK  
2
where IAV  
=
The diode should be selected so that the m axim um  
forward current is greater or equal to the m axim um  
peak current in the inductor, and the m axim um  
reverse voltage is greater or equal to the output  
voltage.  
From the calculations above the im pact on converter  
efficiency can be seen.  
External drive transistor selection  
The Zetex ZHCS1000 m eets these needs. A data sheet  
for the ZHCS1000 is available on the Zetex web site or  
th ro u g h yo u r lo ca l Ze te x s a le s o ffice . Ou tlin e  
inform ation is included in the characteristics section of  
this data sheet.  
For higher power applications an external transistor is  
required to provide the additional base drive current  
to the m ain switching transistor. For this, any sm all  
signal PNP transistor is sufficient. Please see reference  
designs for recom m ended part num bers.  
Inductor selection  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
10  
ZXSC100  
Th e in d u cto r va lu e m u s t b e ch o s e n to s a tis fy  
perform ance, cost and size requirem ents of the overall  
solution. For the reference designs we recom m end an  
inductor value of 22µH with a core saturation current  
rating greater than the converter peak current value.  
Figure 3 shows the discontinuous inductor current and  
the relationship between output power, TON, TDIS and  
TOFF  
.
Inductor selection has a significant im pact on the  
converter efficiency. For applications where efficiency  
is critical, a 5% im provem ent can be achieved with a  
high perform ance inductor. This should be selected  
with a core saturation current rating m uch higher than  
the peak current of the converter, say 3 tim es greater.  
The resultant reduction in core losses brings about the  
efficiency im provem ent.  
IPK  
Peak current definition  
0A  
TON  
The peak current rating is a design param eter whose  
value is dependent upon the overall application. For  
the reference designs, a peak current of 1.2A was  
chosen to ensure that the converter could provide the  
required output power.  
TDIS  
TOFF  
In general, the IPK value m ust be chosen to ensure that  
the switching transistor, Q1, is in full saturation with  
m a xim u m o u tp u t p o w e r co n d itio n s , a s s u m in g  
worse-case input voltage and transistor gain under all  
operating tem perature extrem es.  
Figure 3  
Discontinuous inductor current  
Once IPK is decided the value of RSENSE can be  
determ ined by:  
Output capacitors  
Output capacitors are a critical choice in the overall  
perform ance of the solution. They are required to filter  
the output and supply load transient currents. There  
are three param eters which are param ount in the  
selection of the output capacitors; their capacitance  
value, IRIPPLE and ESR. The capacitance value is  
selected to m eet the load transient requirem ents. The  
capacitors IRIPPLE rating m ust m eet or exceed the  
current ripple of the solution.  
V
ISENSE  
RSENSE  
=
IPK  
Output pow er definition  
By m aking the above assum ptions for the inductor and  
IPK the output power can be determ ined by:  
(VOUT V ) x IPK x TDIS  
The ESR of the output capacitor can also affect loop  
stability and transient perform ance. The capacitors  
s e le cte d fo r th e s o lu tio n , a n d in d ica te d in th e  
reference designs, are optim ised to provide the best  
overall perform ance.  
IN  
Output Power =  
2 x (TOn + TOFF  
)
where  
IPKxL  
TON  
=
V
IN  
and  
TDIS  
IPKxL  
(VOUT V )  
=
IN  
Note: VOUT = output voltage + rectifier diode VF  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
11  
ZXSC100  
Input capacitors  
VOUT  
The input capacitor is chosen for its voltage and RMS  
current rating. The use of low ESR electrolytic or  
tantalum capacitors is recom m ended. Capacitor  
values for optim um perform ance are suggested in the  
reference design section.  
RA  
RB  
Also note that the ESR of the input capacitor is  
e ffe ctive ly in s e rie s w ith th e in p u t a n d h e n ce  
2
VFB  
contributes to efficiency losses in the order of IRMS  
ESR.  
x
Output voltage adjustm ent  
The ZXSC100 is an adjustable converter allowing the  
end user the m axim um flexibility in output voltage  
selection. For adjustable operation a potential divider  
network is connected as indicated in the diagram .  
0V  
The output voltage is determ ined by the equation:  
VOUT= VFB (1 + RA / RB),  
where VFB=730m V  
External transistor base drive selection  
Optim isation of the external switching transistor base  
drive m ay be necessary for im proved efficiency in low  
p o w e r a p p lica tio n s . Th is ca n b e a ch ie ve d b y  
introducing an external resistor between the supply  
and the RE pin of the ZXSC300. The resistor value can  
be determ ined by:  
The resistor values, RA and RB, should be m axim ised  
to im prove efficiency and decrease battery drain.  
Op tim is a tio n ca n b e a ch ie ve d b y p ro vid in g  
a
m inim um current of IFB(MAX)=200nA to the VBATT pin.  
The output is adjustable from VFB to the (BR)VCEO of  
the switching transistor, Q1.  
VDREF  
R =  
Note: For the reference designs, RA is assigned the  
label R3 and RB the label R4.  
1
IB  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
12  
ZXSC100  
Layout issues  
Layout is critical for the circuit to function optim ally in  
term s of electrical efficiency, therm al considerations  
and noise.  
m inim ising parasitic inductance, capacitance and  
resistance. Also the sense resistor R2 should be  
connected, with m inim um trace length, between  
em itter lead of Q1 and ground, again m inim ising stray  
parasitics.  
For step-up converters’ there are four m ain current  
loops, the input loop, power-switch loop, rectifier loop  
and output loop. The supply charging the input  
capacitor form s the input loop. The power-switch loop  
is defined when Q1 is ‘on, current flows from the input  
through the inductor, Q1, RSENSE and to ground. When  
Q1 is ‘off’, the energy stored in the inductor is  
transferred to the output capacitor and load via D1,  
form ing the rectifier loop. The output loop is form ed  
by the output capacitor supplying the load when Q1 is  
switched back off.  
The layout for the 0.33W solution is shown below.  
Actual Size  
To optim ise for best perform ance each of these loops  
s h o u ld b e ke p t s e p a ra te fro m e a ch o th e r a n d  
interconnections m ade with short, thick traces thus  
Top silk  
Drill holes  
Top Copper  
Bottom Copper  
0.33W solution dem o board layout  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
13  
ZXSC100  
Designing w ith the ZXSC100  
Introduction  
Main sw itching w aveform s  
This section refers to the ZXSC100, 3.3V/100m A  
o u tp u t re fe re n ce d e s ig n a n d d e m o n s tra te s th e  
dynam ic perform ance of the solution.  
Steady state operation under constant load gives an  
e xce lle n t in d ica tio n o f ZXS C100 p e rfo rm a n ce .  
Represented in Figure 3. is the m ain switching  
waveform , m easured at the collector of Q1, indicating  
the transistor on-state and the diode energy transfer to  
the output.  
L1  
D1  
VBATT  
3.3V/0.1A  
22µH  
ZHCS1000  
R1  
0R  
C3  
Q1  
R3  
FMMT617  
110K  
U1  
1NF  
VDRIVE  
ISENSE  
FB  
EM  
C2  
BAS  
RE  
220µF  
VCC  
GND  
ZXSC100  
R2  
R4  
C1  
0.033R  
30K  
220µF  
Figure 1.  
ZXSC100 low pow er solution, 3.3V/ 100m A output.  
Figure 3.  
Sw itching w aveform  
Efficiency  
The peak switching current is derived from the  
threshold of the ISENSE pin and the sense resistor value  
(see Applications section for calculations). Figure 4.  
shows the switching waveform associated with the  
Efficiency is often quoted as one of the key param eters  
of a DC-DC converter. Not only does it give an  
instantaneous idea of heat dissipation, but also an  
idea as to the extent battery life can be extended.  
Figure 2. Shows the efficiency of the ZXSC100 low  
power solution. Efficiency v Output current is shown  
for a 3.3V output at various input voltages.  
ISENSE pin  
L1  
D1  
VBATT  
3.3V/0.1A  
22µH  
ZHCS1000  
R1  
0R  
C3  
Q1  
R3  
FMMT617  
110K  
U1  
1NF  
VDRIVE  
ISENSE  
FB  
EM  
C2  
BAS  
RE  
220µF  
VCC  
GND  
ZXSC100  
R2  
R4  
C1  
0.033R  
30K  
220µF  
Figure 4.  
ISENSE threshold  
Figure 2.  
ZXSC100 efficiency v output current  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
14  
ZXSC100  
Shown in Figure 5. is the discontinuous inductor  
current. The ram p-up current stores energy in the  
inductor. The switching transistor,Q1, is on during this  
tim e and has an equivalent current ram p-up, shown in  
Figure 6. The ram p-down current is associated with  
the energy being delivered to the output via the  
Schottky diode, D1. The diode current is equivalent to  
this ram p-down current and is shown in figure 7.  
Figure 7.  
Diode current (200m A/ div)  
Figure 5.  
Inductor current (200m A/ div)  
Figure 6.  
Transistor current (200m A/ div)  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
15  
ZXSC100  
Output voltage ripple  
Output voltage ripple is shown in Figure 8. The circuit  
is operated with a 1.2V input voltage, 3.3V output  
voltage and 100m A load current. Output voltage ripple  
will be dependent, to a large extent, on the output  
ca p a cito r ES R. (s e e Ap p lica tio n s s e ctio n fo r  
recom m ended capacitors).  
Figure 8. Output voltage ripple for 3.3V/ 100m A  
output.  
Transient response  
Transient response to step changes in load is a critical  
feature in m any converter circuits. The ZXSC100  
operates a pulse by pulse regulation schem e and  
therefore corrects for changes in the output every  
pulse cycle, giving excellent response characteristic.  
Measurem ent w ith a pow er supply  
When m easuring with a power supply it is im portant  
to realise that the im pedance is m uch greater than that  
of a secondary battery (NiCd or NiMH). To sim ulate the  
lower im pedance of the battery x10 low ESR 1000uF  
capacitors where placed in parallel at the input of the  
c o n v e r t e r . All t h e d y n a m ic p e r fo r m a n c e  
m easurem ents were taken using this technique.  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
16  
ZXSC100  
CONNECTION DIAGRAMS  
V
EM  
1
2
8
7
DRIVE  
BAS  
RE  
G
ND  
FB  
3
4
6
5
V
I
CC  
SENSE  
MSOP8  
D
Millim e t e rs  
In ch e s  
DIM  
MIN  
MAX  
1.11  
0.20  
0.36  
0.18  
3.05  
MIN  
MAX  
0.044  
0.008  
0.014  
0.007  
0.120  
A
A1  
B
0.91  
0.10  
0.25  
0.13  
2.95  
0.036  
0.004  
0.010  
0.005  
0.116  
8
7
2
6
3
5
4
1
C
e X 6  
D
θ°  
e
0.65NOM  
0.33NOM  
0.0256NOM  
0.0128NOM  
e 1  
E
L
B
C
2.95  
3.05  
5.03  
0.116  
0.120  
0.198  
H
4.78  
0.188  
SO8  
Millim e t e rs  
In ch e s  
DIM  
MIN  
MAX  
MIN  
MAX  
A
B
C
D
E
F
4.80  
4.98  
0.189  
0.196  
1.27 BS C  
0.53 REF  
0.36  
0.05 BS C  
0.02 REF  
0.46  
3.99  
1.75  
0.25  
6.20  
0.014  
0.018  
0.157  
0.07  
3.81  
1.35  
0.10  
5.80  
0.15  
0.05  
G
J
0.004  
0.23  
0.010  
0.24  
© Zetex plc 2004  
Europe  
Am ericas  
Zetex Inc  
Asia Pacific  
Corporate Headquaters  
Zetex Gm bH  
Zetex (Asia) Ltd  
Zetex plc  
Streitfeldstraß e 19  
D-81673 München  
Germ any  
700 Veterans Mem orial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Fields New Road, Chadderton  
Oldham , OL9 8NP  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in m ajor countries world-wide.  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to w w w .zetex.com  
ISSUE 3 - J ANUARY 2004  
S E M IC O N D U C T O R S  
17  
厂商 型号 描述 页数 下载

DIODES

UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

UZX5T2E6TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

UZX5T2E6TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 6 PIN ] 6 页

DIODES

UZX5T849GTA [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.183144s