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UZXMN2A03E6TC

型号：

UZXMN2A03E6TC

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

7 页

PDF大小：

191 K

下载PDF手册
ZXMN2A03E6  
20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= 20V; R  
= 0.055 I = 4.6A  
DS(ON) D  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure  
that combines the benefits of low on-resistance with fast switching speed. This  
makes them ideal for high efficiency, low voltage, power management  
applications.  
SOT23-6  
FEATURES  
•
•
•
•
•
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23-6 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN2A03E6TA  
ZXMN2A03E6TC  
7”  
8mm  
8mm  
3000 units  
13”  
10000 units  
DEVICE MARKING  
Top View  
•
2A3  
ISSUE 4 - SEPTEMBER 2005  
1
ZXMN2A03E6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
LIMIT  
20  
UNIT  
Drain-Source Voltage  
Gate Source Voltage  
V
V
V
V
A
DSS  
GS  
12  
Continuous Drain Current V  
=10V; T =25°C (b)  
I
4.6  
3.7  
3.7  
GS  
A
D
V
=10V; T =70°C (b)  
GS  
A
V
=10V; T =25°C (a)  
GS  
A
Pulsed Drain Current (c)  
I
I
I
16  
2.7  
16  
A
A
A
DM  
S
Continuous Source Current (Body Diode) (b)  
Pulsed Source Current (Body Diode) (c)  
SM  
Power Dissipation at T =25°C (a)  
A
P
1.1  
8.8  
W
mW/°C  
D
Linear Derating Factor  
Power Dissipation at T =25°C (b)  
A
P
1.7  
13.6  
W
mW/°C  
D
Linear Derating Factor  
Operating and Storage Temperature Range  
T :T  
-55 to +150  
°C  
j
stg  
THERMAL RESISTANCE  
PARAMETER  
SYMBOL  
VALUE  
113  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
NOTES  
R
θJA  
70  
R
θJA  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to  
Transient Thermal Impedance graph. Refer to transient thermal impedance graph.  
ISSUE 4 - SEPTEMBER 2005  
2
ZXMN2A03E6  
TYPICAL CHARACTERISTICS  
ISSUE 4 - SEPTEMBER 2005  
3
ZXMN2A03E6  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).  
PARAMETER  
SYMBOL  
MIN.  
TYP. MAX. UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V
20  
V
I
=250µA, V  
=0V  
(BR)DSS  
D
GS  
=20V, V =0V  
DS  
I
I
1
␮A  
V
DSS  
GSS  
GS  
=Ϯ12V, V  
100 nA  
V
V
=0V  
GS  
=250µA, V  
DS  
Gate-Source Threshold Voltage  
V
R
0.7  
I
= V  
GS(th)  
DS(on)  
DS  
GS  
D
Static Drain-Source On-State Resistance  
(1)  
0.055  
0.100  
V
V
=4.5V, I =7.2A  
D
⍀
⍀
GS  
GS  
=2.5V, I =4.6A  
D
Forward Transconductance (1)(3)  
DYNAMIC (3)  
g
13  
S
V
=10V,I =7.2A  
D
fs  
DS  
Input Capacitance  
C
C
C
837  
168  
90  
pF  
pF  
pF  
iss  
V
=10 V, V  
=0V,  
DS  
GS  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
f=1MHz  
oss  
rss  
Turn-On Delay Time  
Rise Time  
t
t
t
t
4.7  
5.7  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
d(on)  
V
R
=10V, I =1A  
D
r
DD  
G
=6.0Ω, V  
=4.5V  
GS  
Turn-Off Delay Time  
Fall Time  
18.5  
10.5  
8.2  
d(off)  
f
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Q
Q
Q
g
V
=10V,V  
=4.5V,  
DS  
GS  
2.3  
ID=7.2A  
gs  
gd  
2.0  
V
0.85  
0.95  
V
T =25°C, I =4.1A,  
SD  
J
S
V
=0V  
GS  
Reverse Recovery Time (3)  
Reverse Recovery Charge (3)  
t
12  
ns  
T =25°C, I =1.9A,  
J F  
rr  
di/dt= 100A/µs  
Q
4.9  
nC  
rr  
NOTES  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 4 - SEPTEMBER 2005  
4
ZXMN2A03E6  
TYPICAL CHARACTERISTICS  
7V  
7V  
3V  
2.5V  
2V  
T = 25°C  
T = 150°C  
3V  
10  
1
2.5V  
10  
1
2V  
1.5V  
VGS  
VGS  
1V  
1.5V  
0.1  
0.1  
0.1  
1
10  
0.1  
1
10  
VDS Drain-Source Voltage (V)  
VDS Drain-Source Voltage (V)  
Output Characteristics  
Output Characteristics  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
=4.5V  
IDG=S 7.2A  
10  
1
RDS(on)  
T = 150°C  
T = 25°C  
VGS(th)  
V
=VDS  
IDG=S 250uA  
VDS = 10V  
0.1  
1
3
-50  
0
50  
100  
150  
VGS Gate-Sour2ce Voltage (V)  
Tj Junction Temperature (°C)  
Typical Transfer Characteristics  
Normalised Curves v Temperature  
T = 25°C  
1.5V  
T = 150°C  
10  
1
10  
1
VGS  
2V  
T = 25°C  
2.5V  
3V  
0.1  
7V  
0.1  
0.2  
0.6  
0.8  
1.0  
1.2  
0.4Source-Drain Voltage (V)  
0.1  
1
10  
V
ID Drain Current (A)  
On-Resistance v Drain Current  
SD  
Source-Drain Diode Forward Voltage  
ISSUE 4 - SEPTEMBER 2005  
5
ZXMN2A03E6  
TYPICAL CHARACTERISTICS  
1400  
1200  
1000  
4.5  
VGS =0V  
f =1MHz  
ID =7.2A  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
C
ISS  
800  
600  
400  
200  
0
COSS  
C
RSS  
VDS = 10V  
0.1  
0
5
10  
VDS - Drain-1SourceVoltage1(0V)  
Q - Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-SourceVoltagevGateCharge  
ISSUE 4 - SEPTEMBER 2005  
6
ZXMN2A03E6  
PACKAGE OUTLINE  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
CONTROLLING DIMENSIONS IN MILLIMETRES APPROX CONVERSIONS INCHES.  
PACKAGE DIMENSIONS  
Millimetres  
Inches  
Min  
Millimetres  
Inches  
Min  
DIM  
DIM  
Min  
0.90  
0.00  
0.90  
0.35  
0.09  
2.80  
Max  
Max  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
Min  
2.60  
1.50  
0.10  
Max  
Max  
0.118  
0.069  
0.002  
A
A1  
A2  
b
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
0.35  
0
E
E1  
L
3.00  
1.75  
0.60  
0.102  
0.059  
0.004  
0.035  
0.014  
0.0035  
0.110  
e
0.95 REF  
1.90 REF  
0° 10°  
0.037 REF  
0.074 REF  
0° 10°  
C
e1  
L
D
© Zetex Semiconductors plc 2005  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Zetex Inc  
Zetex (Asia) Ltd  
Zetex Semiconductors plc  
Zetex Technology Park  
Chadderton, Oldham, OL9 9LL  
United Kingdom  
Streitfeldstraße 19  
D-81673 München  
Germany  
700 Veterans Memorial Hwy  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
These offices are supported by agents and distributors in major countries world-wide.  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product information, log on to www.zetex.com  
ISSUE 4 - SEPTEMBER 2005  
7
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