SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
FZTA42
ISSUE 3 – SEPTEMBER 2007
✪
FEATURES
*
*
Suitable for video output stages in TV sets
C
and switch mode power supplies
High breakdown voltage
E
C
COMPLIMENTARY TYPE FZTA92
B
PARTMARKING DETAIL DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IB
VALUE
UNIT
V
Collector-Base Voltage
300
Collector-Emitter Voltage
Emitter-Base Voltage
300
V
5
100
V
Base Current
mA
mA
W
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
500
Ptot
2
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
300
300
5
V
IC=100µA, IE=0
IC=1mA, IB=0*
IE=100µA, IC=0
Collector-Emitter
Breakdown Voltage
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
0.1
VCB=200V, IE=0
µA
Emitter Cut-Off Current IEBO
0.1
0.5
VEB=5V, IC=0
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
V
IC=20mA, IB=2mA
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=20mA, IB=2mA
Static Forward Current hFE
Transfer Ratio
25
40
40
IC=1mA, VCE=10V*
IC=10mA, VCE=10V*
IC=30mA, VCE=10V*
Transition
Frequency
fT
50
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Cobo
6
VCB=20V, f=1MHz
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMTA42 datasheet.
