Product specification
NZT753
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
4
1 Base
2 Collector
1
2
3
+0.1
0.70
-0.1
3 Emitter
2.9
4.6
4 Collector
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
Rating
Unit
V
-100
Collector-Base Voltage
-120
V
Emitter-Base Voltage
-5
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
IC
-4
- 55 to +150
1.2
A
TJ, TSTG
W
PD
9.7
Derate above 25
mW/
/W
Thermal Resistance, Junction to Ambient
RèJA
103
Electrical Characteristics Ta = 25 unless otherwise stated
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Testconditons
IC = -10mA, IB = 0
Min
-100
-120
-5.0
Typ
Max
Unit
V
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -100ìA, IE = 0
IE = -100ìA, IC = 0
VCB = -100V, IE = 0
TA = 100
V
V
-0.1
-10
ìA
ìA
ìA
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ICBO
IEBO
VEB = -4V, IC = 0
-0.1
VCE = -2.0V, IC = -50mA
VCE = -2.0V, IC = -500mA
VCE = -2.0V, IC = -1.0A
IC = -1.0A, IC = -50mA
IC = -1.0A, IB = -100mA
VCE = -2.0V, IC = -1.0A,
70
100
55
DC Current Gain
hFE
300
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE(sat)
VBE(sat)
VBE(on)
fT
-0.3
-1.25
-1.0
V
V
V
Transition Frequency
VCE = -5V, IC = -100mA, f = 100MHz
75
MHz
*Pulse Test: Pulse Width
300ìs, Duty Cycle
2.0%
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