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IXTP76P10T

型号：

IXTP76P10T

描述：

TrenchP功率MOSFET[ TrenchP Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

222 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = - 100V  
ID25 = - 76A  
IXTA76P10T  
IXTP76P10T  
IXTH76P10T  
RDS(on)  
≤
25mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
D
S
TO-263 AA (IXTA)  
G
G
S
D (Tab)  
TO-220AB (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 100  
- 100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
G
D
S
D (Tab)  
TO-247 (IXTH)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 76  
A
A
- 230  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 38  
1
A
J
G
PD  
TC = 25°C  
298  
W
D
S
D (Tab)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13 /10  
Nm/lb.in.  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ±15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
-100  
V
V
- 2.0  
- 4.0  
Applications  
±100 nA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
- 15 μA  
- 750 μA  
z
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
25 mΩ  
z
z
DS100024B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA76P10T IXTP76P10T  
IXTH76P10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
35  
58  
S
Ciss  
Coss  
Crss  
13.7  
890  
275  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
40  
52  
20  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
197  
65  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
2 - Drain  
Qgd  
65  
3 - Source  
RthJC  
RthCS  
0.42 °C/W  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 76  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 38A, VGS = 0V, Note 1  
- 304  
-1.3  
TO-220 Outline  
trr  
QRM  
IRM  
70  
215  
- 6  
ns  
nC  
A
IF = - 38A, -di/dt = -100A/μs  
VR = - 50V, VGS = 0V  
Note  
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
Pins:  
1 - Gate  
2,4 - Drain  
3 - Source  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA76P10T IXTP76P10T  
IXTH76P10T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
-280  
-240  
-200  
-160  
-120  
-80  
VGS = -10V  
VGS = -10V  
- 9V  
- 9V  
- 8V  
- 8V  
- 7V  
- 6V  
- 7V  
- 6V  
-40  
- 5V  
- 5V  
0
0
-5  
-10  
-15  
-20  
-25  
-30  
0
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 38A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = -10V  
VGS = -10V  
- 9V  
- 8V  
- 7V  
I D = - 76A  
- 6V  
- 5V  
I D = - 38A  
-0.4  
-0.8  
-1.2  
-1.6  
-2  
-2.4  
-2.8  
-3.2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 38A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-40  
-80  
-120  
-160  
-200  
-240  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA76P10T IXTP76P10T  
IXTH76P10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
100  
80  
60  
40  
20  
0
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
125ºC  
25ºC  
- 40ºC  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-6.5  
-7.0  
-1.5  
-40  
0
-20  
-40  
-60  
-80  
-100  
-120  
-140  
-160  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-240  
-200  
-160  
-120  
-80  
VDS = - 50V  
I D = - 38A  
I G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
-40  
0
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
-1.3  
-1.4  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000  
-
= 1 MHz  
f
100µs  
25µs  
1ms  
10ms  
RDS(on) Limit  
100ms  
-
100  
C
iss  
DC  
10  
-
C
oss  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
C
rss  
-
1
-
-
-
100  
1
10  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
VDS - Volts  
VDS - Volts  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXTA76P10T IXTP76P10T  
IXTH76P10T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
44  
40  
36  
32  
28  
24  
20  
44  
40  
36  
32  
28  
24  
20  
RG = 1Ω, VGS = -10V  
VDS = - 50V  
TJ = 25ºC  
RG = 1Ω, VGS = -10V  
DS = - 50V  
V
I D = - 38A  
I D = - 76A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-36  
-40  
-44  
-48  
-52  
-56  
-60  
-64  
-68  
-72  
-76  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
24  
23  
22  
21  
20  
19  
18  
17  
16  
75  
70  
65  
60  
55  
50  
45  
40  
35  
200  
160  
120  
80  
110  
t r  
td(on) - - - -  
tf  
td(off) - - - -  
TJ = 125ºC, VGS = -10V  
VDS = - 50V  
RG = 1Ω, VGS = -10V  
90  
70  
50  
30  
10  
I D = - 76A, - 38A  
VDS = - 50V  
I D = - 38A  
I D = - 76A  
40  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
200  
160  
120  
80  
300  
240  
180  
120  
60  
24  
23  
22  
21  
20  
19  
18  
17  
16  
66  
tf  
t
d(off) - - - -  
tf  
td(off) - - - -  
62  
58  
54  
50  
46  
42  
38  
34  
TJ = 125ºC, VGS = -10V  
VDS = - 50V  
RG = 1Ω, VGS = -10V  
VDS = - 50V  
I D = - 38A, - 76A  
TJ = 125ºC, 25ºC  
40  
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-36  
-40  
-44  
-48  
-52  
-56  
-60  
-64  
-68  
-72  
-76  
RG - Ohms  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA76P10T IXTP76P10T  
IXTH76P10T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_76P10T(A6)11-08-10-A  
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