Product specification
FZT549
SOT-223
Unit: mm
+0.2
+0.2
3.50-0.2
6.50-0.2
■Features
●Power Collector dissipation: PC=2W
+0.2
0.90-0.2
+0.1
● Continuous Collector Current: IC=-1A
3.00-0.1
+0.3
7.00-0.3
4
1 Base
2 Collector
1
2
3
+0.1
3 Emitter
0.70-0.1
2.9
4.6
4 Collector
■Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-35
-30
-5
Unit
V
Collector-emitter voltage
V
Emitter-base voltage
V
Continuous Collector Current
Peak collector current
-1
A
ICM
-2
A
Power Collector dissipation
Operating and storage temperature range
PC
2
W
℃
Tj,Tstg
-55 to +150
■Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditons
Min
-35
-30
-5
Typ Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
V(BR)CBO IC=-100μA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100μA
V
V
ICBO
IEBO
VCB=-30V
VEB=-4V, IC=0
-100
-100
-0.5
nA
nA
V
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
VCE(sat) IC=-1A,IB=-100mA
VBE(sat) IC=-1A,IB=-100mA
VBE(ON) IC=-1A,VCE=-2V
IC=-50mA, VCE=-2V*
-1.25
-1.0
V
V
70
100
80
IC=-500mA,VCE=-2V
hFE
300
DC current gain
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
30
Transition frequecy
Output capacitance
fT
IC=-100mA,VCE=-5V,f=100MHz
VCB=-10V,f=1MHz
100
MHz
pF
Cob
10
* Pulse test: tp ≤300 μs; d ≤0.02.
■ Marking
Marking
549
http://www.twtysemi.com
1 of 1
sales@twtysemi.com
4008-318-123
