SSMMDD TTyyppee
Transistors
Product specification
FZT1051A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
150
40
Typ
190
60
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector Cut-Off Current
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
V
5
9
V
ICBO
ICES
IEBO
VCB=120V
0.3
0.3
0.3
10
10
10
nA
nA
nA
Collector-emitter cut-off current
Emitter Cut-Off Current
VCE=120V
VEB=4V
17
85
25
IC=0.2A, IB=10mA
IC=1A, IB=10mA
IC=2A, IB=20mA
IC=5A, IB=100mA
120
180
340
Collector-emitter saturation voltage *
VCE(sat)
mV
140
250
Base-emitter saturation voltage *
Base-emitter ON voltage *
VBE(sat) IC=5A, IB=100mA
VBE(on) IC=5A, VCE=2V
IC=10mA, VCE=2V*
980 1100 mV
915 1000 mV
290
270
130
40
440
IC=1A, VCE=2V*
hFE
IC=5A, VCE=2V*
450 1200
Static Forward Current Transfer Ratio
220
55
IC=10A, VCE=2V*
Transitional frequency
Output capacitance
Turn-on time
fT
IC=50mA, VCE=10V f=100MHz
155
27
MHz
pF
Cobo
t(on)
t(off)
VCB=10V, f=1MHz
IC=3A, VCC=10V
IB1=IB2=30mA
40
220
540
ns
Turn-off time
ns
* Pulse test: tp = 300 ìs; d
0.02.
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