IXTA4N80P
IXTP4N80P
TO-263 (IXTA) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
2.5
4.0
S
Ciss
Coss
Crss
750
70
pF
pF
pF
6.3
td(on)
tr
td(off)
tf
22
24
60
29
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 18 Ω (External)
Qg(on)
Qgs
14.2
4.8
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
4.8
RthJC
RthCS
1.25 °C/W
°C/W
(TO-220)
0.25
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-220 (IXTP) Outline
VGS = 0 V
3.5
A
A
ISM
Repetitive
8
VSD
trr
IF = IS, VGS = 0 V
1.5
V
IF = 3.5 A, -di/dt = 100 A/μs,
560
ns
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
